CFRB207-G

SMD Fast Recovery Rectifiers CFRB201-G Thru. CFRB207-G Reverse Voltage: 50 to 1000 Volts Forward Current: 2.0 Amp RoHS Device Features DO-214AA (SMB) -Ideal for surface mount applications. -Easy pick and place. 0.185(4.70) 0.160(4.06) -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.155(3.94) 0.130(3.30) 0.083(2.11) 0.075(1.91) -Fast recovery time: 150~500nS. -Low leakage current. Mechanical data 0.220(5.59) 0.200(5.08) -Case: JEDEC DO-214AA, molded plastic. 0.012(0.31) 0.006(0.15) 0.096(2.44) 0.083(2.13) -Terminals: solderable per MIL-STD-750, method 2026. 0.008(0.20) 0.004(0.10) 0.050(1.27) 0.030(0.76) -Polarity: Color band denotes cathode end. -Approx. weight: 0.093 grams Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Symbol CFRB 201-G CFRB 202-G CFRB 203-G CFRB 204-G CFRB 205-G CFRB 206-G CFRB 207-G Units Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Max. DC blocking voltage VDC 50 100 200 400 600 800 1000 V Max. RMS voltage VRMS 35 70 140 280 420 560 700 V Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) IFSM 50 A Max. average forward current IO 2.0 A Max. instantaneous forward voltage at 2.0A VF 1.3 V Reverse recovery time Trr Parameter Max. DC reverse current at TA=25 rated DC blocking voltage TA=125 Max. thermal resistance (Note 1) Max. operating junction temperature Storage temperature O C C O 150 250 500 nS IR 5.0 50 RθJL 20 TJ 150 O C TSTG -55 to +150 O C μA O C/W Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm square2 (0.13mm thick) land area. REV:A Page 1 QW-BF003 Comchip Technology CO., LTD. SMD Fast Recovery Rectifiers RATING AND CHARACTERISTIC CURVES (CFRB201-G thru CFRB207-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 1000 100 10 TJ=125 OC F o r w a rd C u rren t(A) Rever s e C urr e n t (μA ) 100 10 1 0.1 1 TJ=25 OC Pulse width 300μS 4% duty cycle O TJ=25 C 0.1 0.01 0 30 60 90 120 0 150 0.8 1.6 1.2 2.0 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig.3 Junction Capacitance Fig.4 Non-repetitive Forward Surge Current 140 60 Peak F or ward Surge C ur re nt A ( ) TJ=25 OC f=1MHz Vsig=50mVp-p 120 J u n c ti o n C apacian t ce(p F ) 0.4 100 80 60 40 20 O TJ=25 C 8.3ms single half sine wave, JEDEC method 50 40 30 20 10 0 0 0.1 1 10 100 1000 1 10 100 Number of Cycles at 60Hz Reverse Voltage (V) Fig.6 Current Derating Curve Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics 2.8 trr 10Ω NONINDUCTIVE Average Forward Current (A) 50Ω NONINDUCTIVE +0.5A (+) 25Vdc (approx.) (-) (-) D.U.T. 1Ω NONINDUCTIVE PULSE GENERATOR (NOTE 2) 0 -0.25A (+) OSCILLLISCOPE (NOTE 1) NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF. 2. Rise time=10ns max., input impedance=50Ω. -1.0A 2.4 2.0 1.6 1.2 Single phase Half wave 60Hz 0.8 0.4 0 0 1cm Set time base for 50 / 10nS / cm 25 50 75 100 125 Ambient Temperature ( 150 O 175 C) REV:A Page 2 QW-BF003 Comchip Technology CO., LTD.