CJ3139KDW-G

MOSFET CJ3139KDW-G (Dual P-Channel ) RoHS Device SOT-363 V(BR)DSS RDS(on)MAX ID 0.087(2.20) 0.079(2.00) 520mΩ @ -4.5V -20V 700mΩ @ -2.5V 6 5 4 2 3 0.053(1.35) 0.045(1.15) -0.66A 1 950mΩ(TYP) @ -1.8V 0.055(1.40) 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.045(1.15) 0.041(1.05) 0.096(2.45) 0.085(2.15) Features - High-side switching. 0.018(0.46) 0.010(0.26) 0.004(0.10) 0.000(0.00) 0.014(0.35) 0.006(0.15) - Low on-resistance. - Low threshold. Dimensions in inches and (millimeter) - Fast switching speed. Circuit Diagram Mechanical data G : Gate S : Source D : Drain - Case: SOT-363, molded plastic. - Terminals: Solderable per MIL-STD-750, method 2026. G2 6 5 S2 4 1 2 3 D1 - Weight: 0.006 grams (approx.). S1 Maximum Ratings G1 D2 (at Ta=25 °C unless otherwise noted) Symbol Value Unit Drain-source voltage VDSS -20 V Typ. Gate-source voltage VGS ±12 V Drain current-continuous ID(DC) -0.66 A IDM(pulse) -2.64 A PD 150 mW RθJA 833 °C/W Junction temperature range TJ -40 to +150 °C Storage temperature range TSTG -55 to +150 °C Parameter Drain current-pulsed (Note 1) Power dissipation (Note 2) Thermal resistance from junction to ambient Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 1 QW-BTR52 Comchip Technology CO., LTD. MOSFET Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Symbol Conditions Min Typ Max Unit On/Off States Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID = -250µA -20 Gate threshold voltage (Note 3) VGS(th) VDS = VGS, ID = -250µA -0.35 V -1.1 V Gate-body leakage current IGSS VGS = ±10V, VDS = 0V ±20 µA Zero gate voltage drain current IDSS VDS = -20V, VGS = 0V -1 µA VGS = -4.5V, ID = -1AA 520 VGS = -2.5V, ID = -800mA 700 Drain-source on-state resistance (Note 3) RDS(on) VGS = -1.8V, ID = -500mA Forward transconductance gfs VDS = -10V, ID = -540mA mΩ 950 0.8 S Dynamic characteristics (Note 4) ciss Input capacitance Output capacitance Coss Reverse transfer capacitance Crss 170 VDS = -16V, VGS = 0V 25 f = 1MHZ pF 15 Switching time (Note 4) Turn-on delay time td(on) tr Rise time Turn-off delay time td(off) Fall time 9 VDD = -10V, ID = -200mA 5.8 VGS = -4.5V, RG = 10Ω 32.7 nS 20.3 tf Drain-source diode characteristics Drain-source diode forward voltage (Note 3) VSD IS = -0.5A , VGS = 0V -1.2 V Notes: 1. Repetitive rating: Pulse width limited by maximum junction temperture. 2. This test is performed with no heat sink at Ta=25°C. 3. Pulse test: Pulse width ≤ 300µs, Duty cycle ≤ 0.5%. 4. These parameters have no way to verify. Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 2 QW-BTR52 Comchip Technology CO., LTD. MOSFET Rating and Characteristic Curves (CJ3139KDW-G) Fig.2 - Transfer Characteristics Fig.1 - Output Characteristics -2.0 -3.0 VDS = -5V VGS= -10V Pulsed VGS= -4.5V -2.5 -1.6 Ta=25°C Drain Current, ID (A) Drain Current, ID (A) VGS= -3V -2.0 VGS= -2.5V -1.5 -1.0 -1.2 Ta=100°C -0.8 -0.4 -0.5 VGS= -1.5V -0.0 -0.0 0 -1 -3 -2 -4 -0 -5 -0.5 -1.0 -2.5 2.0 VGS= -1.8V 1.2 VGS= -2.5V 0.8 0.4 1.2 0.8 0.4 VGS= -4.5V ID = -0.8A 0.0 0 0 -0.4 -0.8 -1.2 Ta=25°C Pulsed 1.6 On-Resistance, RDS(ON) (Ω) 1.6 -3.0 Fig.4 - RDS(ON) — VGS Fig.3 - RDS(ON) — ID 2.0 On-Resistance, RDS(ON) (Ω) -2.0 -1.5 Gate to Source Voltage, VGS (V) Drain to Source Voltage, VDS (V) -1.6 -2.0 -1 Drain Current, ID (A) -3 -2 -4 -5 -6 Gate to Source Voltage, VGS (V) Fig.6 - Threshold Voltage Fig.5 - IS — VSD -3 -0.8 Threshold Voltage, VTH (V) Source Current, Is (A) -1 -0.1 -0.01 -1E-3 -1E-4 -0.4 -0.8 -1.2 -1.6 -2.0 -0.7 ID = -250µA -0.6 -0.5 -0.4 25 Source to Drain Voltage, VSD (V) 50 75 100 125 Junction Temperature, TJ (°C) Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 3 QW-BTR52 Comchip Technology CO., LTD. MOSFET Reel Taping Specification P1 W B F E d P0 C A P 12 o 0 D2 D1 D W1 SOT-363 SOT-363 SYMBOL A B C d D D1 D2 (mm) 2.25 ± 0.05 2.55 ± 0.05 1.20 ± 0.05 1.50 ± 0.10 178.00 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.089 ± 0.002 0.100 ± 0.002 0.047 ± 0.002 0.059 ± 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30/-0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012/-0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 4 QW-BTR52 Comchip Technology CO., LTD. MOSFET Marking Code Part Number Marking Code CJ3139KDW-G 39K Pin 1 39K 39K Solid dot = Control code Suggested P.C.B. PAD Layout C SOT-363 SIZE (mm) (inch) A 0.80 0.032 B 0.40 0.016 C 0.65 0.026 D 1.94 0.076 E 2.74 0.108 A D E B Standard Packaging REEL PACK Case Type SOT-363 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 5 QW-BTR52 Comchip Technology CO., LTD.