CMS100N04H8-HF

MOSFET CMS100N04H8-HF N-Channel RoHS Device Halogen Free PR-PAK Features - Advanced DMOS trench technology. - Fast switching. - Improve dv/dt capability. - 100% EAS and Rg guaranteed. - Green device available. 0.197(5.00) 0.189(4.80) 0.012(0.30) 0.008(0.20) 0.161(4.10) 0.146(3.70) D D D D 8 7 6 5 0.244(6.20) 0.232(5.90) 0.138(3.50) REF. 0.232(5.90) 0.224(5.70) 0.043(1.10) REF. Mechanical data 1 2 3 4 S S S G 0.020(0.51) 0.012(0.30) - Case: PR-PAK 0.050(1.27) Nom. 0.008(0.20) 0.002(0.06) 0.024(0.60) Nom. 0.004(0.10) 0.000(0.00) Circuit Diagram 0.045(1.15) 0.033(0.85) D - G : Gate - S : Source - D : Drain Dimensions in inches and (millimeter) G S Maximum Ratings Symbol Value Unit Drain-source voltage VDS 40 V Gate-source voltage VGS ±20 V TC = 25°C ID 100 TC = 100°C ID 63 IDM 400 TC = 25°C PD 135 TA = 25°C PD 2 Single pulse avalanche energy, L=0.1mH (Note 3) EAS 312 mJ Single pulse avalanche current, L=0.1mH (Note 3) IAS 79 A Operating junction and storage temperature range TJ, TSTG -55 to +150 °C Parameter Conditions Continuous drain current (Note 1) A Pulsed drain current (Note 1, 2) Total power dissipation (Note 4) A W Thermal resistance junction-ambient (Note 1) Steady state RθJA 62.5 °C/W Thermal resistance junction-case (Note 1) Steady state RθJC 0.92 °C/W Notes: 1. The data tested by surface mounted on a 1inch² FR-4 board with 2oz copper. 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 3. The EAS data shows max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=79A. 4. The power dissipation is limited by 150°C junction temperature. Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 1 QW-JTR104 Comchip Technology CO., LTD. MOSFET Electrical Characteristics (at T =25°C unless otherwise noted) J Parameter Symbol Conditions Min Drain-source breakdown voltage BVDSS VGS = 0V, ID = 250µA 40 Gate threshold voltage VGS(th) VDS = VGS, ID = 250µA 1.2 Gate-source leakage current IGSS Drain-source leakage current (Tj=25°C) Typ Max V 1.6 VGS = ±20V 2.5 V ±100 nA VDS = 40V, VGS = 0V 1 VDS = 32V, VGS = 0V 10 µA IDSS Drain-source leakage current (Tj=125°C) Static drain-source on-resistance (Note 2) VGS = 10V, ID = 25A 2.2 2.8 VGS = 4.5V, ID = 12A 2.6 3.5 RDS(on) mΩ Total gate charge (Note 2) Qg Gate-source charge Qgs Gate-drain (”miller”) charge Qgd 16 Turn-on delay time (Note 2) td(on) 28 Rise time Turn-off delay time 44.4 ID = 10A, VDS = 20V, VGS = 4.5V 9.6 tr VDD = 20V, ID = 1A 3.2 td(off) VGS = 10V, RG = 6Ω 89 nC nS tf 14 Input capacitance Ciss 4940 Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg f = 1MHZ VSD IS = 20A, VGS = 0V, TJ = 25°C Fall time Unit VGS = 0V, VDS = 25V, f = 1MHZ pF 425 170 1.4 Ω Source-drain diode Diode forward voltage (Note 2) Continuous source current (Note 1, 4) IS 1.2 V 100 A 200 A VG = VD = 0V, Force current Pulsed source current (Note 2, 4) ISM Guaranteed avalanche characteristics Single pulse avalanche energy (Note 3) EAS VDD = 25V, L = 0.1mH, IAS = 40A 80 mJ Notes: 1. The data tested by surface mounted on a 1inch² FR-4 board with 2oz copper. 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 3. The min. value is 100% EAS tested guarantee. 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 QW-JTR104 Comchip Technology CO., LTD. MOSFET Rating and Characteristic Curves (CMS100N04H8-HF) Fig.1 - Typical Output Characteristics Fig.2 - On-Resistance vs. G-S Voltage 100 12 VGS=10V, 7V, 4.5V On-Resistance, RDS(ON) (mΩ) ID= 25A Drain Current, ID (A) 80 60 40 VGS=3V 20 0 0 0.2 0.4 0.6 0.8 6 4 2 0 2 4 6 8 Drain-to-Source Voltage, VDS (V) Gate-to-Source Voltage, VGS (V) Fig.3 - On-Resistance vs. Drain Current Fig.4 - Normalized RDS(ON) vs. TJ VGS=4.5V 3 2 VGS= 10V 1 0 10 2.0 Normalized On-Resistance On-Resistance, RDS(ON) (mΩ) 8 0 1.0 4 0 40 20 60 80 1.5 1.0 0.5 -50 100 0 100 50 150 Drain Current, ID (A) Junction Temperature, TJ (°C) Fig.5 - Normalized VGS(th) vs. TJ Fig.6 - Forward Characteristics of Reverse 100 1.2 1.1 Source Current, IS (A) Normalized Threshold Voltage 10 1.0 0.9 0.8 TJ=25°C 10 1 0.7 0.6 -50 0 50 100 150 0.1 0 Junction Temperature, TJ (°C) 0.2 0.4 0.6 0.8 1.0 Source-to-Drain Voltage, VSD (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 3 QW-JTR104 Comchip Technology CO., LTD. MOSFET Rating and Characteristic Curves (CMS100N04H8-HF) Fig.7 - Gate Charge Characteristics Fig.8 - Drain Current vs. TC VDS=20V ID=10A 80 Drain Current, ID (A) Gate-to-Source Voltage, VGS (V) 100 4 3 2 1 0 60 40 20 0 10 20 30 40 50 0 25 Gate Charge, QG (nC) 50 75 100 125 150 Case Temperature, TC (°C) Fig.9 - Safe Operating Area 1000 Drain Current, ID (A) 10µs 100 100µs 1ms 10 10ms 100ms DC Tc=25°C 1 0.1 1 10 100 Drain-to-Source Voltage, VDS (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 4 QW-JTR104 Comchip Technology CO., LTD. MOSFET Reel Taping Specification P1 d P0 T E F W B C P A 12 o 0 D1 D2 D W1 Trailer Device ....... ....... End ....... ....... ....... ....... Leader ....... ....... 50 ± 2 pockets Start 140 ± 2 pockets Direction of Feed PR-PAK PR-PAK SYMBOL A B C d D (mm) 6.50 ± 0.10 5.30 ± 0.10 1.40 ± 0.10 1.50 + 0.10 - 0.00 330.00 ± 1.00 178.00 + 0.00 - 2.00 13.00 min. (inch) 0.256 ± 0.004 0.209 ± 0.004 0.055 ± 0.004 0.059 + 0.004 - 0.000 12.992 ± 0.039 7.008 + 0.000 - 0.079 0.512 min. SYMBOL E F P P0 P1 (mm) 1.75 ± 0.10 5.50 ± 0.05 8.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 (inch) 0.069 ± 0.004 0.217 ± 0.002 0.315 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 D2 W W1 0.30 ± 0.05 12.00 ± 0.30 18.40 ref. 0.012 ± 0.002 0.472 ± 0.012 0.724 ref. Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 5 QW-JTR104 Comchip Technology CO., LTD. MOSFET Marking Code 8 Part Number Marking Code CMS100N04H8-HF 40N03 6 7 5 40N03 XXXX 1 3 2 4 XXXX = Control code Suggested PAD Layout I PR-PAK SIZE (mm) (inch) A 1.27 0.050 B 0.61 0.024 C 4.42 0.174 D 1.27 0.050 E 6.61 0.260 F 4.32 0.170 G 4.52 0.178 H 3.81 0.150 I 3.91 0.154 G H F E B A D C Note: 1. The pad layout is for reference purposes only. Standard Packaging REEL PACK Case Type PR-PAK REEL Reel Size ( pcs ) (inch) 3,000 13 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 6 QW-JTR104 Comchip Technology CO., LTD.