CMS16P06H8-HF

P-CHANNEL ENHANCEMENT MODE POWER MOSFET CMS16P06H8-HF Description Package Dimensions The CMS16P06H8-HF is the highest performance P-ch MOSFETs with super high dense cell design for extremely low R DS(ON) and gate charge for most of the synchronous buck converter applications. DFN5x6(PR-PAK) The CMS16P06H8-HF meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. Features •Low Reverse Transfer Capacitance •Improve dv/dt Capability •Green Device Available •High Switching Speed •100% EAS Guaranteed REF. A A1 b c D F E2 Circuit diagram D Millimeter REF. Min. Nom. Max. 0.85 1.00 1.15 E 0.00 0.10 e 0.30 0.51 H 0.30 L 0.20 5.00 L1 4.80 α 1.10REF. 3.50REF. K Millimeter Min. Nom. Max. 5.70 5.90 1.27 5.90 6.20 0.60 0.06 0.20 0∘ 12∘ 3.70 3.90 4.10 - G : Gate - S : Source G - D : Drain S Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V I D @T C =25 ̊C -16 A I D @T C =100 ̊C IDM -10 A -64 -5 A I D @T A =25 ̊C I D @T A =70 ̊C -4 A P D @T C =25 ̊C 25 W P D @T A =25 ̊C 2 W E AS 51 mJ I AS -32 A T J ,T STG -55 ~ +150 ℃ Continuous Drain Current Pulsed Drain Current 1 2 Continuous Drain Current Total Power Dissipation 1 4 Single Pulse Avalanche Energy, L=0.1mH 3 Single Pulse Avalanche Current, L=0.1mH 3 Operating Junction and Storage Temperature Range A Thermal Data Parameter Thermal Resistance Junction-ambient Thermal Resistance Junction-case1 1 Symbol Conditions Max. Value Unit R θJA Steady State 62.5 ̊ C /W R θJC Steady State 5 ̊ C /W Company reserves the right to improve product design , functions and reliability without notice. REV: A SP-JTR44 Page 1 Comchip Technology CO., LTD. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Electrical Characteristics (T J=25 ̊C unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BV DSS -60 ‫־‬ ‫־‬ V V GS =0, I D =-250uA Gate Threshold Voltage V GS(th) -1.0 -1.7 -2.5 V V DS = V GS , I D = -250uA Gate-Source Leakage Current I GSS - - ±100 nA V GS =±20V Drain-Source Leakage Current I DSS - - -1 uA V DS = -60V, V GS = 0 - 44 48 - 55 65 Parameter Static Drain-Source On-Resistance2 2 R DS(ON) mΩ Test Conditions V GS =-10V, I D = -8A V GS =-4.5V,I D = -4A Total Gate Charge Qg - 22 - Gate-Source Charge Q gs - 4.1 - Gate-Drain (“Miller”) Change Q gd - 5.2 - V GS = -10V T d(on) - 13 - V DS =-30V Tr - 42 - T d(off) - 65 - V GS =-10V Tf - 16 - R G =6Ω Input Capacitance C iss - 1256 - V GS = 0V Output Capacitance C oss - 87 - Reverse Transfer Capacitance C rss - 59 - 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time I D = -8A nC ns pF V DS = -30V I D = -1A V DS = -30V f=1.0MH Z Guaranteed Avalanche Characteristics Parameter Single Pulse Avalanche Energy 5 Symbol Min. Typ. Max. Unit EAS 3.2 - - mJ Symbol Min. Typ. Max. Unit Test Conditions V SD - -0.72 -1.0 V I S =-1A,V GS =0V,T J =25 ̊C IS - - -16 A ------ Test Conditions VDD=-25V, L=0.1mH, IAS=-8A Source-Drain Diode Parameter Diode Forward Voltage 2 Continuous Source Current 1,6 2 Notes: 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed,pulse width ≤ 300us,duty cycle ≤ 2%. 3.The EAS data shows Max. rating. The test condition is V DD =-25V,V GS =-10V,L=0.1mH,I AS =-32A. 4.The power dissipation is limited by 150 ̊C junction temperature. ５.The Min. Value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM,in real applications,should be limited by total power dissipation. Company reserves the right to improve product design , functions and reliability without notice. REV: A SP-JTR44 Page 2 Comchip Technology CO., LTD. P-CHANNEL ENHANCEMENT MODE POWER MOSFET -I D Drain Current(A) -I D Drain Current(A) Typical Characteristics -V GS Gate-to-source Voltage (V) Fig.2 Transfer Characteristics Normalized On-Resistance R DS(ON) On-Resistance (mΩ) -V DS Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics -I D Drain Current (A) T J Junction Temperature ( ̊ C ) Fig.3 On-Resistance vs. Drain Current Fig.4 Normalized R DSON vs. T J 10 -I S Source Current (A) R DS(ON) On-Resistance (mΩ) 160 120 80 40 0 1 0.1 0.01 -V SD Source-to-Drain Voltage (V) -V GS Gate-to-source Voltage (V) Fig. 5 On-Resistance vs. G-S Voltage Fig.6 Forward Characteristics of Reverse Company reserves the right to improve product design , functions and reliability without notice. REV: A SP-JTR44 Page 3 Comchip Technology CO., LTD. P-CHANNEL ENHANCEMENT MODE POWER MOSFET 8 Capacitance (pF) -V GS Gate-to-source Voltage (V) 10 6 4 2 0 Q G Gate Charge (nC) -V DS Drain-to-source Voltage (V) Fig.8 Capacitance Characteristics -I D Drain Current (A) -V GS(th) (Normalized) Fig.7 Gate Charge Characteristics Temperature ( ̊ C ) Fig.9 Safe Operating Area Fig.10 Normalized V GS(th) VS. Temperature R θJC Normalized Transient Response -V DS Drain-to-source Voltage (V) t Pulse Width (sec) Fig.11 Normalized Maximum Transient Thermal Impedance Company reserves the right to improve product design , functions and reliability without notice. REV: A SP-JTR44 Page 4 Comchip Technology CO., LTD. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Reel Taping Specification d P1 E P0 T F W B P C A 12 o 0 D2 D1 D W1 Trailer Tape 50±2 Empty Pockets DFN5x6 (PR-PAK) Symbol A (mm) 6.50 ± 0.10 (inch) DFN5x6 (PR-PAK) Leader Tape 140±2 Empty Pockets Components B 5.30 ± 0.10 C d 1.40 ± 0.10 1.50 ± 0.05 D D1 330.00 ± 2.00 178.00 ± 2.00 D2 13.00 ± 1.00 0.256 ± 0.004 0.209 ± 0.004 0.055 ± 0.004 0.059 ± 0.002 12.992 ± 0.079 7.008 ± 0.079 0.512 ± 0.039 Symbol E F P P0 P1 T W W1 (mm) 1.75 ± 0.10 5.50 ± 0.05 8.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 0.30 ± 0.05 12.00 ± 0.30 18.40 ± 1.00 (inch) 0.069 ± 0.004 0.217 ± 0.002 0.315 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.012 ± 0.002 0.472 ± 0.012 0.724 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV: A SP-JTR44 Page 5 Comchip Technology CO., LTD. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Marking Code Part Number Marking Code CMS16P06H8 5465A 5465A Suggested PAD Layout Dimensions A B C D E F G H I xxxx Control Code A D Value (in mm) 4.420 3.810 6.610 1.020 0.610 0.660 1.270 0.820 1.270 B C G H I E F Note: 1.The pad layout is for reference purposes only. Standard Packaging REEL PACK Case Type DFN5x6 (PR-PAK) REEL Reel Size ( pcs ) (inch) 3,000 13 Company reserves the right to improve product design , functions and reliability without notice. REV: A SP-JTR44 Page 6 Comchip Technology CO., LTD.