CMS25N03V8-HF

MOSFET CMS25N03V8-HF N-Channel RoHS Device Halogen Free PDFN3.3x3.3(SPR-PAK) Features - Advanced high cell density trench technology. - Super low gate charge. - Excellent cdv/dt effect decline. - Green device available. - 100% EAS guaranteed. 0.126(3.20) 0.118(3.00) 0.102(2.59) 0.094(2.39) D D D D 8 7 6 5 0.020(0.50) 0.012(0.30) 0.136(3.45) 0.126(3.20) 0.126(3.20) 0.118(3.00) Mechanical data 0.066(1.68) 0.058(1.48) 0.006(0.15) Max. 1 2 3 4 S S S G 0.020(0.50) 0.012(0.30) 0.026(0.65) BSC 0.014(0.35) 0.010(0.25) - Case: PDFN3.3x3.3/SPR-PAK standard package, molded plastic. 0.031(0.80) 0.028(0.70) 0.134(3.40) 0.126(3.20) 0.010(0.25) 0.004(0.10) Circuit diagram D - G : Gate - S : Source - D : Drain Dimensions in inches and (millimeter) G S Maximum Ratings Symbol Value Unit Drain-source voltage VDS 30 V Gate-source voltage VGS ±20 V Parameter Conditions ID @ TC = 25°C 25 ID @ TC = 100°C 16 Continuous drain current (Note 1) Pulsed drain current (Note 1, 2) A IDM 55 PD @ TC = 25°C 20 PD @ TA = 25°C 1.7 Total power dissipation (Note 4) A W Single pulse avalanche energy, L=0.1mH (Note 3) EAS 22 mJ Single pulse avalanche current, L=0.1mH (Note 3) IAS 21 A Operating junction temperature range TJ -55 to +150 °C TSTG -55 to +150 °C Storage temperature range Thermal resistance junction-ambient (Note 1) Steady state RθJA 75 °C/W Thermal resistance junction-case (Note 1) Steady state RθJC 6 °C/W Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 1 QW-JTR73 Comchip Technology CO., LTD. MOSFET Electrical Characteristics (at T =25°C unless otherwise noted) J Parameter Symbol Conditions Min Drain-source breakdown voltage BVDSS VGS = 0V, ID = 250µA 30 Gate threshold voltage VGS(th) VDS = VGS, ID = 250µA 1.0 Typ Max 1.8 2.5 Unit V Gate-source leakage current IGSS Drain-source leakage current (Tj=25°C) VGS = ±20V ±100 VDS = 30V, VGS = 0V 1 VDS = 24V, VGS = 0V 5 µA IDSS Drain-source leakage current (Tj=55°C) Static drain-source on-resistance (Note 2) VGS = 10V, ID = 10A 15 18 VGS = 4.5V, ID = 5A 21 28 RDS(on) mΩ Total gate charge (Note 2) Qg Gate-source charge Qgs Gate-drain (”miller”) charge Qgd 2.2 Turn-on delay time (Note 2) td(on) 4.1 Rise time Turn-off delay time tr td(off) 7.2 ID = 10A, VDS = 20V, VGS = 4.5V 1.4 nC 9.8 VDS = 12V, VGS = 10V nS ID = 5A, RG = 3.3Ω 15.5 tf 6.0 Input capacitance Ciss 572 Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg f = 1MHZ VSD IS = 10A, VGS = 0V, TJ=25°C Fall time nA VGS = 0V, VDS = 15V, f = 1MHZ pF 81 65 2.5 Ω Source-drain diode Diode forward voltage (Note 2) Continuous source current (Note 1,6) IS 1.2 V 25 A 50 A VG = VD = 0V, Force current Pulsed source current (Note 2,6) ISM Guaranteed avalanche characteristics Single pulse avalanche energy (Note 5) EAS VDD = 25V, L=0.1mH, IAS = 10A 5 mJ Notes: 1. The data tested by surface mounted on a 1 inch² FR-4 board with 2 oz copper. 2. The data tested by pulsed, pulse width ≤300µs, duty cycle ≤ 2%. 3. The EAS data shows max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=21A. 4. The power dissipation is limited by 150°C junction temperature. 5. The min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 QW-JTR73 Comchip Technology CO., LTD. MOSFET Rating and Characteristic Curves (CMS25N03V8-HF) Fig.1 - Typical Output Characteristics Fig.2 - On-Resistance vs. G-S Voltage 28 12 On-Resistance, RDS(ON) (mΩ) VGS=10V 10 Drain Current, ID (A) VGS=7V VGS=5V 8 VGS=4.5V 6 VGS=3V 4 2 0 0 0.5 1 1.5 24 20 16 12 2 2 4 6 8 10 Drain-to-Source Voltage, VDS (V) Gate-to-Source Voltage, VGS (V) Fig.3 - Normalized VGS(th) vs. TJ Fig.4 - Normalized RDS(ON) vs. TJ 1.8 2.1 Normalized On-Resistance Normalized, VGS(th) ID=9A 1.4 1.0 0.6 0.2 -50 0 100 50 1.8 1.5 1.2 0.9 0.6 0.3 -50 150 0 100 50 150 Junction Temperature, TJ (°C) Junction Temperature, TJ (°C) Fig.5 - Safe Operating Area Fig.6 - Forward Characteristics of Reverse 100 10 8 100µs 10 Source Current, IS (A) Drain Current, ID (A) 10µs 10ms 1 100ms DC 0.1 TJ=150°C 6 TJ=25°C 4 2 Tc=25°C Single pulse 0.01 0.1 1 10 100 0 0 Drain-to-Source Voltage, VDS (V) 0.3 0.6 0.9 Source-to-Drain Voltage, VSD (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 3 QW-JTR73 Comchip Technology CO., LTD. MOSFET Rating and Characteristic Curves (CMS25N03V8-HF) Fig.7 - Gate Charge Characteristics Fig.8 - Capacitance Characteristics 6 1000 Ciss 4.5 Capacitance, (pF) Gate-to-Source Voltage, VGS (V) f=1MHz VDS=20A ID=10A 3 Coss 100 Crss 1.5 0 0 2.5 5 7.5 10 10 1 Total Gate Charge, QG (nC) 5 9 13 17 21 25 Drain-to-Source Voltage, VDS (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 4 QW-JTR73 Comchip Technology CO., LTD. MOSFET Reel Taping Specification d P0 P1 T E F W B C P A 12 o 0 D1 D2 D W1 Trailer Device ....... ....... End ....... ....... ....... ....... Leader ....... ....... 50 ± 2 pockets Start 140 ± 2 pockets Direction of Feed SYMBOL SPR-PAK SPR-PAK A B C d D 1.50 + 0.10 - 0.00 330.00 ± 1.00 178.00 + 0.00 - 2.00 13.00 min. 7.008 + 0.000 - 0.079 0.512 min. D2 (mm) 3.55 ± 0.10 3.55 ± 0.10 1.10 + 0.10 - 0.05 (inch) 0.140 ± 0.004 0.140 ± 0.004 0.043 + 0.004 - 0.002 0.059 + 0.004 - 0.000 12.992 ± 0.039 SYMBOL E F P P0 P1 (mm) 1.75 ± 0.10 5.50 ± 0.05 8.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 0.30 ± 0.05 (inch) 0.069 ± 0.004 0.217 ± 0.002 0.315 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.012 ± 0.002 W 12.00 + 0.30 - 0.10 0.472 + 0.012 - 0.004 W1 18.40 ref. 0.724 ref. Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 5 QW-JTR73 Comchip Technology CO., LTD. MOSFET Marking Code 8 Part Number Marking Code CMS25N03V8-HF 25N03 7 5 6 25N03 XXXX 1 3 2 4 Pin 1 XXXX = Control code Suggested PAD Layout SPR-PAK (PDFN3.3x3.3) SIZE (mm) (inch) A 0.40 0.016 B 0.60 0.024 C 2.35 0.093 A F B G D D 3.55 0.140 E 2.80 0.110 F 0.65 0.026 G 0.35 0.014 H 0.25 0.010 C H E Note: 1. The pad layout is for reference purposes only. Standard Packaging REEL PACK Case Type SPR-PAK (PDFN3.3x3.3) REEL Reel Size ( pcs ) (inch) 3000 13 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 6 QW-JTR73 Comchip Technology CO., LTD.