CMS45P03H8-HF

P-CHANNEL ENHANCEMENT MODE POWER MOSFET CMS45P03H8-HF Description Package Dimensions The CMS45P03H8-HF is the highest performance trench P-ch MOSFET with extreme high cell density, which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications. DFN5x6(PR-PAK) The CMS45P03H8-HF meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. Features •Advanced DMOS trench technology •Improve dv/dt capability •Green device available •Fast switching •100% EAS guaranteed REF. A A1 b c D F E2 Circuit diagram Millimeter REF. Min. Nom. Max. 0.85 1.00 1.15 E 0.00 0.10 e 0.30 0.51 H 0.20 0.30 L 4.80 5.00 L1 α 1.10REF. 3.50REF. K Millimeter Min. Nom. Max. 5.70 5.90 1.27 5.90 6.20 0.60 0.06 0.20 0∘ 12∘ 3.70 3.90 4.10 D - G : Gate - S : Source - D : Drain G S Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V I D @T C =25 ̊C -45 A I D @T C =100 ̊C IDM -30 A -150 -9.6 A I D @T A =25 ̊C I D @T A =70 ̊C -7.7 A P D @T C =25 ̊C 45 W P D @T A =25 ̊C 2 W E AS 88 mJ I AS -42 A T J ,T STG -55 ~ +150 ℃ Continuous Drain Current Pulsed Drain Current 1 1,2 Continuous Drain Current Total Power Dissipation 1 4 Single Pulse Avalanche Energy, L=0.1mH 3 Single Pulse Avalanche Current, L=0.1mH 3 Operating Junction and Storage Temperature Range A Thermal Data Parameter Thermal Resistance Junction-ambient Thermal Resistance Junction-case1 1 Symbol Conditions Max. Value Unit R θJA Steady State 62.5 ̊ C /W R θJC Steady State 2.8 ̊ C /W Company reserves the right to improve product design , functions and reliability without notice. REV: A SP-JTR43 Page 1 Comchip Technology CO., LTD. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Electrical Characteristics (T J=25 ̊C unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BV DSS -30 ‫־‬ ‫־‬ V V GS =0, I D =250uA Gate Threshold Voltage V GS(th) -1.0 ‫־‬ -2.5 V V DS = V GS , I D = 250uA gfs ‫־‬ 30 ‫־‬ S V DS = - 5V,I D =-30A I GSS - - ±100 nA V GS =±20V - - -1 - - -5 - - 15 - - 25 Parameter Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current ( T J = 25̊ C ) I DSS Drain-Source Leakage Current ( T J = 55̊ C ) Static Drain-Source On-Resistance2 2 R DS(ON) uA Test Conditions V DS = -30V, V GS = 0 V DS = -24V, V GS = 0 mΩ V GS =-10V, I D = 30A V GS =-4.5V,I D = 15A Total Gate Charge Qg - 22 - Gate-Source Charge Q gs - 8.7 - Gate-Drain (“Miller”) Change Q gd - 7.2 - V GS = -4.5V T d(on) - 8 - V DD =-15V Tr - 73.7 - T d(off) - 61.8 - V GS =-10V Tf - 24.4 - R G =3.3Ω Input Capacitance C iss - 2215 - V GS = 0V Output Capacitance C oss - 310 - Reverse Transfer Capacitance C rss - 237 - Gate Resistance Rg - 9 - Ω 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time I D = -15A nC ns pF V DS = -15V I D = -15A V DS = -15V f=1.0MH Z f=1.0MH Z Guaranteed Avalanche Characteristics Symbol Min. Typ. Max. Unit Test Conditions EAS 22 - - mJ VDD=-25V, L=0.1mH, IAS=-21A Symbol Min. Typ. Max. Unit Test Conditions V SD - - -1.2 V I S =-30A, V GS = 0V,T J =25 ̊C IS - - -45 A I SM - - -150 A Reverse Recovery Time t rr - 19 - ns I F =-15A,dl/dt=100A/μs Reverse Recovery Charge Qrr - 9 - nC T J =25 ̊C Parameter Single Pulse Avalanche Energy 5 Source-Drain Diode Parameter Forward on Voltage 2 Continuous Source Current Pulsed Source Current 2,6 1,6 V G =V D =0V,Force Current 2 Notes: 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed,pulse width ≤ 300us,duty cycle ≤ 2%. 3.The EAS data shows Max. rating. The test condition is V DD =-25V,V GS =-10V,L=0.1mH,I AS =-42A. 4.The power dissipation is limited by 150 ̊C junction temperature. ５.The Min. Value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM,in real applications,should be limited by total power dissipation. Company reserves the right to improve product design , functions and reliability without notice. REV: A SP--JTR43 Page 2 Comchip Technology CO., LTD. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Typical Characteristics R DS(ON) On-Resistance(mΩ) 150 -I D Drain Current(A) 125 100 75 50 25 25 20 15 10 0 0 1 2 3 2 4 4 -V DS Drain-to-Source Voltage (V) 10 Fig.2 On-Resistance vs. G-S Voltage 2.0 Normalized On-Resistance 1.5 V GS(th) (Normalized) 8 -V GS Gate-to-source Voltage (V) Fig.1 Typical Output Characteristics 1.0 0.5 0 1.5 1.0 0.5 -50 0 50 100 -50 150 T J Junction Temperature ( ̊ C ) 50 100 150 Fig.4 Normalized R DSON vs. T J 12 -I S Source Current(A) 1000 100 10 1 0 .1 8 4 0 0 .1 0 T J Junction Temperature ( ̊ C ) Fig.3 Normalized V GS(th) VS. T J I D Drain Current(A) 6 1 10 100 0 0.5 0.75 1.0 -V SD Source-to-Drain Voltage (V) -V DS Drain-to-source Voltage (V) Fig.5 Safe Operating Area 0.25 Fig.6 Forward Characteristics of Reverse Company reserves the right to improve product design , functions and reliability without notice. REV: A SP--JTR43 Page 3 Comchip Technology CO., LTD. P-CHANNEL ENHANCEMENT MODE POWER MOSFET 10000 8 Capacitance(pF) -V GS Gate-to-source Voltage(V) 10 6 4 1000 100 2 0 10 0 18 9 27 36 45 1 5 Q G Gate Charge (nC) 13 17 21 25 -V DS Drain-to-source Voltage (V) Fig.7 Gate Charge Characteristics R θJC Normalized Transient Response 9 Fig.8 Capacitance Characteristics 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t Pulse Width (sec) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform Company reserves the right to improve product design , functions and reliability without notice. REV: A SP--JTR43 Page 4 Comchip Technology CO., LTD. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Reel Taping Specification d P1 E P0 T F W B P C A 12 o 0 D2 D1 D W1 Trailer Tape 50±2 Empty Pockets DFN5x6 (PR-PAK) Symbol A (mm) 6.50 ± 0.10 (inch) DFN5x6 (PR-PAK) Leader Tape 140±2 Empty Pockets Components B 5.30 ± 0.10 C d 1.40 ± 0.10 1.50 ± 0.05 D D1 330.00 ± 2.00 178.00 ± 2.00 D2 13.00 ± 1.00 0.256 ± 0.004 0.209 ± 0.004 0.055 ± 0.004 0.059 ± 0.002 12.992 ± 0.079 7.008 ± 0.079 0.512 ± 0.039 Symbol E F P P0 P1 T W W1 (mm) 1.75 ± 0.10 5.50 ± 0.05 8.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 0.30 ± 0.05 12.00 ± 0.30 18.40 ± 1.00 (inch) 0.069 ± 0.004 0.217 ± 0.002 0.315 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.012 ± 0.002 0.472 ± 0.012 0.724 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV: A SP--JTR43 Page 5 Comchip Technology CO., LTD. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Marking Code Part Number Marking Code CMS45P03H8 45P03 45P03 Suggested PAD Layout Dimensions A B C D E F G H I xxxx Control Code A D Value (in mm) 4.420 3.810 6.610 1.020 0.610 0.660 1.270 0.820 1.270 B C G H I E F Note: 1.The pad layout is for reference purposes only. Standard Packaging REEL PACK Case Type DFN5x6 (PR-PAK) REEL Reel Size ( pcs ) (inch) 3,000 13 Company reserves the right to improve product design , functions and reliability without notice. REV: A SP--JTR43 Page 6 Comchip Technology CO., LTD.