SMD ESD Protection Diode
CPDA10R3V3U-HF
RoHS Device
Halogen Free
Features
DFN10P
- IEC61000-4-2 (ESD)±12kV(Contact),±15kV(Air).
0.100(2.55)
0.096(2.45)
- Working voltage: 3.3 V
- Low leakage current.
- Low capacitance: 0.4 pF typical (I/O to GND)
0.041(1.05)
0.037(0.95)
Mechanical data
0.014(0.35) Typ.
- Case: DFN10p package,molded plastic.
- Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
- Mounting position: Any
Circuit Diagram
0.008(0.20) Typ.
0.022(0.55)
0.018(0.45)
0.016(0.40) Typ.
I/O
Pin 4
I/O
Pin 2
I/O
Pin 1
I/O
Pin 5
0.014(0.35) Typ.
GND
Pin 3 & 8
Dimensions in inches and (millimeters)
Package
N/C N/C
10 9
N/C N/C
8
7
6
4
5
GND
1
2
I/O I/O
3
I/O I/O
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SMD ESD Protection Diode
Maximum Rating (at TA=25°C unless otherwise noted)
Symbol
Value
Unit
Peak pulse power ( tp = 8/20 us)
PPP
39.2
W
Peak pulse current ( tp = 8/20 us)
IPP
4
A
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
ESD
15
12
kV
TJ
-55 to +125
°C
TSTG
-55 to +150
°C
Parameter
Operating temperature
Storage temperature
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Reverse stand-off voltage
Symbol
Min
Typ
VRWM
Max
Unit
3.3
V
Breakdown Voltage
IT = 1 mA
Leakage current
VRWM = 3.3V
IR
IPP = 1A, TP = 8/20us,
Any Channel Pin to Ground
VC
6.3
V
IPP = 4A, TP = 8/20us,
Any Channel Pin to Ground
VC
9.8
V
VR = 0V, f = 1MHZ
Any Channel Pin to Ground
Cj
0.4
pF
VBR
4
4.7
V
1
uA
Clamping voltage
Junction capacitance
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SMD ESD Protection Diode
RATING AND CHARACTERISTIC CURVES (CPDA10R3V3U-HF)
Fig.1 - 8/20us Peak Pulse Current
Waveform ACC. IEC 61000-4-5
Percentage of Ipp
Test Waveform
parameters
tf=8us
td=20us
Ta=25°C
Peak Valur Ipp
100%
Fig.2 - Forward Characteristics
100
Forward Current, (mA)
120%
e-t
80%
60%
40%
td= t Ipp/2
T A =125°C
T A =75°C
10
T A =25°C
T J =50°C
1
20%
0
0%
0
5
10
15
20
0.4
30
25
0.6
Time, (us)
0.8
1.0
1.2
Forward Voltage, (V)
Fig.3 - Clamping Voltage Vs.
Peak Pulse Current
Fig.4 - Power Rating Derating Curve
15
120
Mounting on glass epoxy PCBs
12
Power Rating, (%)
Clamping Voltage, (V)
100
9
6
Waveform
Parameters:
tr=8us
td=20us
3
80
60
40
20
0
1
2
3
4
0
25
50
75
100
125
Ambient Temperature, ( °C )
Peak Pulse Current, (A)
Capacitance Between Terminals, (pF)
Fig.5 - Typical Capacitance Between
Terminals Characteristics
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4
2.7 3.0 3.3
Reverse Voltage, (V)
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SMD ESD Protection Diode
Reel Taping Specification
d
P0
P1
T
E
Index hole
.E3V3
F
W
B
C
P
A
12
o
0
D2
D1 D
W1
Trailer
Device
.......
.......
End
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
DFN10P
DFN10P
SYMBOL
A
B
C
d
D
D1
D2
(mm)
1.14 ± 0.05
2.64 ± 0.05
0.64 ± 0.05
1.50 + 0.10
- 0
178.00 ± 1.00
60.00 + 0.50
- 0
13.00 ± 0.20
(inch)
0.045 ± 0.002
0.104 ± 0.002
0.025 ± 0.002
0.059 + 0.004
- 0
7.008 ± 0.039
2.362 + 0.020
- 0
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
T
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
0.20 ± 0.05
8.00 ± 0.30
12.00 ± 0.15
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.079 ± 0.002
0.008 ± 0.002
0.315 ± 0.012
0.472 ± 0.006
0.157 ± 0.004 0.157 ± 0.004
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± 0.002
SMD ESD Protection Diode
Marking Code
Part Number
Marking Code
CPDA10R3V3U-HF
.E3V3
.E3V3
Suggested PAD Layout
DFN10P
SIZE
(mm)
(inch)
A
2.30
0.091
B
1.00
0.039
C
0.38
0.015
D
0.30
0.012
E
0.30
0.012
F
0.50
0.020
G
0.24
0.009
A
B
G
C
D
E
F
Standard Packaging
Case Type
DFN10P
Qty Per Reel
Reel Size
(Pcs)
(inch)
3,000
7
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