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CPDQC3V3T-HF

CPDQC3V3T-HF

  • 厂商:

    COMCHIP(典琦)

  • 封装:

    0402

  • 描述:

    ESDDIODES3.3V0.5UA0402C/SOD-

  • 数据手册
  • 价格&库存
CPDQC3V3T-HF 数据手册
SMD ESD Protection Diode CPDQC3V3T-HF RoHS Device Halogen Free Features 0402C/SOD-923F 0.041(1.05) 0.037(0.95) - Bi-directional ESD protection. - IEC 61000-4-2 ±30kV(Contact). - ESD Rating of Class 3 per Human Body Model. 0.026(0.65) 0.022(0.55) - ESD Rating of Class 4 per Machine Model. - Surface mount package. - Ultra small SMD package:0402 0.022(0.55) 0.018(0.45) - High component density. 0.012(0.30) 0.008(0.20) Mechanical data 0.001(0.02) Max. - Case: 0402C/SOD-923F Standard package, molded plastic. 0.022(0.55) 0.018(0.45) - Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Dimensions in inches and (millimeter) - Mounting position: Any. Circuit diagram - Weight: 0.001 grams(approx.). Maximum Rating (at T =25°C unless otherwise noted) A Parameter Conditions Symbol Value Unit Peak pulse power TP = 8/20us PPP 180 W Peak pulse current TP = 8/20us A IPP 17 IEC 61000-4-2(air) ESD ±30 IEC 61000-4-2(contact) ESD ±30 Tj -40~+125 °C TSTG -55~+150 °C ESD capability Operation temperature range Storage temperature range kV Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Conditions Working peak reverse voltage IT = 1mA Reverse leakage current VRWM = 3.3V Clamping voltage IPP = 1A, TP = 8/20us IPP = 17A, TP = 8/20us IPP = 8A, TP = 100ns IPP = 16A, TP = 100ns Dynamic resistance Junction capacitance Min Typ 3.6 4.1 VBR 4.6 IR V
CPDQC3V3T-HF 价格&库存

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