CPDV5-3V3UP-HF

SMD ESD Protection Diode CPDV5-3V3UP-HF RoHS Device Halogen Free Features SOT-353 -IEC61000-4-2 Level 4 ESD protection 0.087(2.20) 0.079(2.00) -Working voltage: 3.3V -Low leakage current. 0.053(1.35) 0.045(1.15) -Low operating and clamping voltages. 0.055(1.40) 0.047(1.20) Mechanical data -Case: SOT-353 standard package ,molded plastic. 0.006(0.15) 0.003(0.08) -Terminals: Tin plated, solderable per MIL-STD-750,method 2026. 0.039(1.00) 0.035(0.90) 0.096(2.45) 0.085(2.15) -Mounting position: Any -Weight: 0.0070 gram (approx.). Circuit Diagram 5 0.018(0.46) 0.010(0.26) 0.004(0.10) 0.000(0.00) 0.014(0.35) 0.006(0.15) 4 Dimensions in inches and (millimeter) 1 2 3 Maximum Ratings (at T =25°C unless otherwise noted) A Symbol Value Unit Peak pulse power ( tp = 8/20 us) PPP 40 W Peak pulse current IPP 5 A VESD ±20 ±15 kV Tj -55 to +125 O -55 to +125 O Parameter ( tp = 8/20 us) ESD per IEC 61000-4-2(Air) ESD per IEC 61000-4-2(Contact) Operating temperature Storage temperature TSTG C C Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Conditions Reverse stand-off voltage Symbol Min Typ Max Unit 3.3 VRWM V Punch-through voltage IPT = 2uA VPT 3.5 V Snap-back voltage ISB = 50mA VSB 2.8 V Reverse leakage current VRWM = 3.3V IR IPP = 1 A, tp=8/20us 0.5 uA VC 5.5 V IPP = 5 A, tp=8/20us VC 8.0 V Reverse clamping voltage IPPR = 1 A, tp=8/20us VCR 2.4 V Junction capacitance VR = 0 V, f = 1MHz 16 pF 0.05 Clamping voltage Cj 12 Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 1 QW-JP023 Comchip Technology CO., LTD. SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDV5-3V3UP-HF) Fig.1 - Non-repetitive max. peak pulse power vs. pulse time Fig.2 - Power rating derating curve 110 100 90 80 Power rating (%) Max. peak pulse power-PPP(kW ) 1 0.1 70 60 50 40 30 20 10 0.01 0 0.1 1 100 10 0 1000 25 50 75 100 Ambient temperature ( Pulse duration-tp(us) Fig.3 - Clamping voltage vs. peak pulse current 150 C) Fig.4 - Forward voltage vs. Forward current 16 12 Waveform Parameters: tr=8us td=20us 14 10 12 Forward voltage (V) Clamping voltage (V) 125 O 10 8 Waveform Parameters: tr=8us td=20us 6 4 8 6 4 2 2 0 0 0 1 2 3 4 5 6 Peak pulse current(A) 0 1 2 3 4 5 6 Forward current(A) Fig.5 - Junction capacitance vs. reverse voltage Normalized capacitance - Cj (pF) 20 16 12 8 4 0 0 1 2 3 4 Reverse voltage (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 2 QW-JP023 Comchip Technology CO., LTD. SMD ESD Protection Diode Reel Taping Specification P1 d T W B F E P0 C A P 12 o 0 D2 D1 D W1 SOT-353 SOT-353 SYMBOL A B C d D D1 D2 (mm) 2.25± 0.05 2.55 ± 0.05 1.20 ± 0.05 1.50 + 0.10 178 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.089 ± 0.002 0.100 ± 0.002 0.047 ± 0.002 0.059 + 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 12.30 ± 1.0 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 3 QW-JP023 Comchip Technology CO., LTD. SMD ESD Protection Diode Marking Code 5 Part Number Marking Code CPDV5-3V3UP-HF E3V3 4 E3V3 . 1 2 3 Suggested PAD Layout C SOT-353 SIZE (mm) (inch) A 0.80 0.031 B 0.40 0.016 C 1.30 0.051 D 1.94 0.076 E 2.74 0.108 A D E B Standard Packaging REEL PACK Case Type SOT-353 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 4 QW-JP023 Comchip Technology CO., LTD.