CPDVR083V3U-HF

S MD ESD Protection Diode SMD Diodes Specialist CPDVR083V3U-HF RoHS Device Features H alogen free. IEC61000-4-2 (ESD)±15kV(Contact),±20kV(Air). Working voltage: 3.3V Low leakage current. Low operating and clamping voltages. 0.067(1.70) 0.059(1.50) SOT-383F(VR8) 0.086(2.20) 0.079(2.00) Mechanical data C ase: SOT-383F standard package,molded plastic. Terminals: Gold plated/Nipd, solderable per MIL-STD-750,method 2026. Mounting position: Any 0.059(1.50)Typ. Circuit Diagram 1 8 2 7 3 6 4 5 0.008(0.20) Typ. 0.022(0.55) 0.018(0.45) 0.012(0.30) Typ. Package 8 7 GND 0.014(0.35) Typ. Dimensions in inches and (millimeters) 6 5 GND 1 2 3 4 REV:A QW-G7016 Page 1 Comchip Technology CO., LTD. SMD ESD Protection Diode SMD Diodes Specialist Maximum Rating ( at T A =25 C unless otherwise noted) O Parameter Peak pulse power ( tp = 8/20 us) Peak pulse current ( tp = 8/20 us) ESD per IEC 61000-4-2(Air) ESD per IEC 61000-4-2(Contact) Operating temperature Storage temperature Symbol P PP I PP V ESD Tj T STG Value 40 5 ±20 ±15 -55 to +125 -55 to +125 Unit W A kV O C C O Electrical Characteristics ( at T A =25 C unless otherwise noted) O Parameter Reverse stand-off voltage Punch-through voltage Snap-back voltage Reverse leakage current Conditions I PT = 2 uA I SB = 5 0mA V RWM = 3 .3V I PP = 1 A, tp=8/20us, Any Channel Pin to Ground Symbol Min Typ Max Unit V RWM V PT V SB IR VC VC V CR Cj Cj 25 14 3.5 2.8 0.05 0.5 5.5 8.0 2.4 30 3.3 V V V uA V V V pF pF Clamping voltage I PP = 5 A, tp=8/20us, Any Channel Pin to Ground Reverse clamping voltage I PPR = 1 A, tp=8/20us, Ground to Any Channel Pin V R = 0 V, f = 1MHz Any Channel Pin to Ground Junction capacitance V R = 3 .3 V, f = 1MHz Any Channel Pin to Ground REV:A QW-G7016 P age 2 Comchip Technology CO., LTD. SMD ESD Protection Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CPDVR083V3U-HF) Fig. 1 - Non-repetitive max. peak pulse power vs. pulse time Max. peak pulse power-P PP (kW ) 1 Fig. 2 - Power rating derating curve 110 100 90 80 Power rating (%) 100 70 60 50 40 30 20 10 0.1 0.01 0.1 1 10 1000 0 0 25 50 75 100 O 125 150 Pulse duration-tp(us) Ambient temperature ( C ) Fig.3 - Clamping voltage vs. peak pulse current 16 14 10 12 Fig.4 - Forward voltage vs. Forward current Clamping voltage (V) Forward voltage (V) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 Waveform Parameters: tr=8us td=20us Waveform Parameters: tr=8us td=20us 8 6 4 2 0 0 1 2 3 4 5 6 Peak pulse current(A) Forward current(A) Fig.5 - Junction capacitance vs. reverse voltage 30 Normalized capacitance - Cj (pF) f = 1MHz 25 Line-to-Gnd 20 15 10 Line-to-Line 5 0 0 0.5 1 1.5 2 2.5 3 3.5 Reverse voltage (V) REV:A QW-G7016 P age 3 Comchip Technology CO., LTD. SMD ESD Protection Diode SMD Diodes Specialist Reel Taping Specification P0 P1 d Index hole E T F B P A W C 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ....... 10 pitches (min) End Start Direction of Feed SYMBOL A 1.96 ± 0.10 0.077 ± 0.004 B 2.31 ± 0.10 0.091 ± 0.004 C 0.74 ± 0.10 0.029 ± 0.004 d 1.55 + 0.10 0.061 + 0.004 D 178 ± 1 7.008 ± 0.04 D1 60.0 MIN. 2.362 MIN. D2 13.0 ± 0.20 0.512 ± 0.008 SOT-383F (mm) (inch) SYMBOL E 1.75 ± 0.10 0.069 ± 0.004 F 3.50 ± 0.05 0.138 ± 0.002 P 4.00 ± 0.10 0.157 ± 0.004 P0 4.00 ± 0.10 0.157 ± 0.004 P1 2.00 ± 0.10 0.079 ± 0.004 T 0.22 ± 0.05 0.009 ± 0.002 W 8.00 ± 0.20 0.315 ± 0.008 W1 13.5 MAX. 0.531 MAX. SOT-383F (mm) (inch) REV:A QW-G7016 Page 4 Comchip Technology CO., LTD. SMD ESD Protection Diode SMD Diodes Specialist Marking Code Part Number CPDVR083V3U-HF Marking Code E3V3 E3V3 Suggested PAD Layout SOT-383F(VR8) SIZE (mm) A B C D E F 0.630 0.300 0.500 0.450 2.150 1.800 (inch) 0.025 0.012 D B C E 0.020 0.018 0.085 0.071 A F Standard Package Qty per Reel Case Type (Pcs) SOT-383F(VR8) Reel Size (inch) 7 3000 REV:A QW-G7016 P age 5 Comchip Technology CO., LTD.