CSFB202

SMD Super Fast Recovery Rectifier COMCHIP w ww.comchip.com.tw C SFB201 Thru CSFB205 R everse Voltage: 50 - 600 Volts Forward Current: 2.0 Amp Features I deal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Super fast recovery time 35-50 nS Built-in strain relief Low forward voltage drop SMB/DO-214AA 0.083(2.11) 0.075(1.91) 0.185(4.70) 0.160(4.06) 0.155(3.94) 0.130(3.30) Mechanical Data 0.096(2.44) 0.083(2.13) 0.012(0.31) 0.006(0.15) C ase: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.093 gram 0.050(1.27) 0.030(0.76) 0.220(5.59) 0.200(5.08) 0.008(0.20) 0.203(0.10) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics P arameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 2.0 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol V RRM V DC V RMS I FSM CSFB 201 50 50 35 CSFB 202 100 100 70 CSFB 203 200 200 140 CSFB 204 400 400 280 CSFB 205 600 600 420 Unit V V V A 50 Io VF Trr IR R 0.95 35 2 .0 1.3 1.5 50 A V nS uA 5.0 100 20 -55 to +150 -55 to +150 JL C /W C C Tj T STG N ote 1: Thermal resistance from junction to lead, 8.0x8.0 mm square (0.13 mm thick) land areas. M DS0210019B Page 1 SMD Super Fast Recovery Rectifier COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CSFB201 Thru CSFB205) Fig. 1 - Reverse Characteristics 1 000 1 00 F ig.2 - Forward Characteristics CSFB201-203 Forward current ( A ) T j=125 C 10 CSFB204 100 10 Tj=75 C 1.0 CSFB205 0.1 Tj=25 C Pulse width 300uS 4% duty cycle 1.0 Tj=25 C 0.1 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Forward Voltage (V) F ig. 3 - Junction Capacitance 50 Fig. 4 - Non Repetitive Forward Surge Current Peak surge Forward Current ( A ) 60 8 .3mS Single Half Sine Wave JEDEC methode f=1.0MHz Vsig=50mVp-p J unction Capacitance (pF) 40 50 40 30 Tj=25 C 20 15 0 30 20 Tj=25 C 10 0 0.1 1.0 10 100 1000 1 5 10 50 1 00 Reverse Voltage (V) Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A Fig. 6 - Current Derating Curve 2.8 Average Forward Current ( A ) trr | | | | | | | | 2.4 2.0 1.6 1.2 0.8 0.4 00 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 -0.25A S ingle Phase Half Wave 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 25 50 75 100 125 150 175 Ambient Temperature ( C) MDS0210019B Page 2