CSFC302

SMD Super Fast Recovery Rectifier COMCHIP w ww.comchip.com.tw C SFC301 Thru CSFC305 R everse Voltage: 50 - 600 Volts Forward Current: 3.0 Amp Features I deal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Super fast recovery time 35-50 nS Built-in strain relief Low forward voltage drop SMC/DO-214AB 0.124(3.15) 0.108(2.75) 0.280(7.11) 0.260(6.60) 0.245(6.22) 0.220(5.59) Mechanical Data 0.103(2.62) 0.079(2.00) 0.012(0.31) 0.006(0.15) C ase: JEDEC DO-214AC molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.21 gram 0.050(1.27) 0.030(0.76) 0.320(8.13) 0.305(7.75) 0.008(0.20) 0.0203(0.10) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics P arameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 3.0 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol V RRM V DC V RMS I FSM CSFC 301 50 50 35 CSFC 302 100 100 70 CSFC 303 200 200 140 CSFC 304 400 400 280 CSFC 305 600 600 420 Unit V V V A 100 Io VF Trr IR R 0.95 35 3 .0 1.3 1.5 50 A V nS uA 5.0 100 16 -55 to +150 -55 to +150 JL C /W C C Tj T STG N ote 1: Thermal resistance from junction to lead, 8.0x8.0 mm square (0.13 mm thick) land areas. M DS0210020B Page 1 SMD Super Fast Recovery Rectifier COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CSFC301 Thru CSFC305) Fig. 1 - Reverse Characteristics 1 000 Tj=75 C T j=125 C 1 00 F ig.2 - Forward Characteristics CSFC301-303 Forward current ( A ) 10 100 CSFC304 1.0 10 CSFC305 0.1 Tj=25 C Pulse width 300uS 4% duty cycle 1.0 Tj=25 C 0.1 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Forward Voltage (V) F ig. 3 - Junction Capacitance 100 Peak surge Forward Current ( A ) f=1.0MHz Vsig=50mVp-p Fig. 4 - Non Repetitive Forward Surge Current 2 00 8 .3mS Single Half Sine Wave JEDEC methode J unction Capacitance (pF) 80 100 60 Tj=25 C 50 40 Tj=25 C 20 0 10 1.0 10 100 1000 1 5 10 50 1 00 0.1 Reverse Voltage (V) Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A Fig. 6 - Current Derating Curve 3.5 Average Forward Current ( A ) trr | | | | | | | | 3.0 2.5 2.0 1.5 1.0 0.5 00 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 -0.25A S ingle Phase Half Wave 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 25 50 75 100 125 150 175 Ambient Temperature ( C) MDS0210020B Page 2