CSFL104

SMD Super Fast Recovery Rectifier COMCHIP www.comchiptech.com C SFL101 Thru CSFL105 R everse Voltage: 50 - 600 Volts Forward Current: 1.0 Amp Features DO-213AB (Plastic Melf) I deal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Super fast recovery time 35-50 nS Built-in strain relief Low forward voltage drop 0.022(0.55) Max. 0.205(5.2) 0.195(4.8) Mechanical Data C ase: DO-213AB molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.116 gram 0.105(2.67) 0.095(2.40) D imensions in inches and (millimeters) M aximum Ratings and Electrical Characterics P arameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 1.0 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol V RRM V DC V RMS I FSM CSFL 101 50 50 35 CSFL 102 100 100 70 CSFL 103 200 200 140 CSFL 104 400 400 280 CSFL 105 600 600 420 Unit V V V A 30 Io VF Trr IR R 0.95 35 1.0 1.3 1.5 50 A V nS uA 5.0 100 50 -55 to +150 -55 to +150 JA C /W C C Tj T STG N ote 1: Thermal resistance from junction to ambient. M DS0210016B Page 1 SMD Super Fast Recovery Rectifier COMCHIP www.comchiptech.com Rating and Characteristic Curves (CSFL101 Thru CSFL105) Fig. 1 - Reverse Characteristics 1 000 T j=125 C 10 F ig.2 - Forward Characteristics CSFL101-103 Forward current ( A ) 1.0 100 Tj=75 C CSFL104 0.1 10 CSFL105 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 1.0 Tj=25 C 0.1 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) 0.001 0 0.2 0. 4 0.6 0.8 1.0 1.2 1.4 Forward Voltage (V) F ig. 3 - Junction Capacitance 14 Fig. 4 - Non Repetitive Forward Surge Current Peak surge Forward Current ( A ) 30 8 .3mS Single Half Sine Wave JEDEC methode 12 f=1.0MHz Vsig=50mVp-p J unction Capacitance (pF) 25 20 15 Tj=25 C 10 5 0 10 8 6 4 2 0 Tj=25 C 0.1 1.0 10 100 1 5 10 50 1 00 Reverse Voltage (V) Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A Fig. 6 - Current Derating Curve 1.4 Average Forward Current ( A ) trr | | | | | | | | 1.2 1.0 0.8 0.6 0.4 0.2 00 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 -0.25A S ingle Phase Half Wave 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 25 50 75 100 125 150 175 Ambient Temperature ( C) MDS0210016B Page 2