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CSFMT105-HF

CSFMT105-HF

  • 厂商:

    COMCHIP(典琦)

  • 封装:

    SOD123H

  • 描述:

    DIODE GEN PURP 300V 1A SOD123H

  • 详情介绍
  • 数据手册
  • 价格&库存
CSFMT105-HF 数据手册
Low Profile SMD Super Fast Recovery Rectifiers SMD Diodes Specialist CSFMT101-HF Thru. CSFMT108-HF Reverse Voltage: 50 to 600 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free Features -Excellent power dissipation offers better reverse leakage current and thermal resistance. -Low profile package is 40% thinner than standards SOD-123. -Tiny plastic SMD package. -High current capability. -Super fast reovery time for switching mode application. -High surge current capability. -Glass passivated chip junction. -Lead-free parts meet RoHS requirment. SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.055(1.4) Mechanical data -Epoxy: UL94-V0 rated flame retardant. -Case: Molded plastic, SOD-123H/MINI SMA -Terminals: Solderable per MIL-STD-750, Method 2026. -Polarity: Indicated by cathode band. -Mounting Position: any -Weight: 0.011 grams approx. 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeter) Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Max. repetitive peak reverse voltage Max. Continuous rever voltage Max. RMS voltage Max. averaged forward current Max. Forward voltage @ IF=1.0A Reverse recovery time (Note 1) Max. Forward surge current 8.3ms singe half sine-wave superimposed on rated load (JEDEC method) Symbol VRRM VR VRMS IO VF TRR CSFMT CSFMT CSFMT CSFMT CSFMT CSFMT CSFMT CSFMT 101-HF 102-HF 103-HF 104-HF 105-HF 106-HF 107-HF 108-HF Unit V V V A 50 50 35 100 100 70 150 150 105 200 200 140 1.0 300 300 210 400 400 280 500 500 350 600 600 420 0.95 35 1.25 1.70 V ns IFSM 25 5.0 A VR=VRRM TJ=25°C Max. Reverse current VR=VRRM TJ=100°C Typ. Thermal resistance Junction to ambient air IR 100 RθJA CJ TJ TSTG 42 10 -55 to +150 -65 to +175 μA °C/W pF °C °C Typ. Junction capacitance f=1MHz and applied 4V DC reverse voltage Operating junction temperature Storage temperature Note 1. Reverse recovery time test condition,IF=0.5A,IR=1.0A,IRR=0.25A REV: A QW-JS002 Page 2 Comchip Technology CO., LTD. Low Profile SMD Super Fast Recovery Rectifiers SMD Diodes Specialist Rating and Characteristic Curves (CSFMT101-HF Thru. CSFMT108-HF) Fig.2- Typical Forward Current Derating Curve 1.4 10 Fig.1- Typical Forward Characteristics ΙF,Instantaneous Forward Current, (A) IO, Average Forward Current, (A) 1-H F~ 1 FM T1 0 1.2 1.0 0.8 0.6 0.4 0.2 0 0 04 Single phase, half wave, 60Hz, resistive or inductive load -H F 1.0 5HF ~1 0 T1 0 CS 6HF FM 0.1 T1 FM CS 07 - 0 ~1 HF HF 8- CS 0.01 TJ=25 OC Pulse width=300μs 1% duty cycle 25 50 75 100 125 150 175 0.001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 TA, Ambient Temperature (°C) VF, Forward Voltage (V) Fig.3- Test Circuit Diagram and Reverse Recovery Time Characteristics 25 50W NONINDUCTIVE Fig.4- Maximum Non-repetitive Forward Surge Current IFSM, Peak Forward Surge Current, (A) TJ=25 C 8.3ms single half sine wave, JEDEC method O 10W NONINDUCTIVE 20 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 15 10 NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. 5 trr +0.5A | | | | | | | | 0 1 10 100 Number of Cycles at 60Hz 0 -0.25A Fig.5- Typical Junction Capacitance 70 CJ, Junction Capacitance, (pF) -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 60 50 40 30 20 10 0 0.01 0.1 1 10 100 VR, Reverse Voltage, (V) REV: A QW-JS002 Page 2 Comchip Technology CO., LTD. Low Profile SMD Super Fast Recovery Rectifiers SMD Diodes Specialist Reel Taping Specification P0 P1 d Index hole E T F B P A W C 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ....... 10 pitches (min) End Start Direction of Feed SYMBOL A 2.00 ± 0.10 0.079 ± 0.004 B 3.85 ± 0.10 0.152 ± 0.004 C 1.10 ± 0.10 0.043 ± 0.004 d 1.50 ± 0.10 0.059 ± 0.004 D 178 ± 2.00 7.00 ± 0.079 D1 62.0 MIN. 2.440 MIN. D2 13.0 ± 0.50 0.512 ± 0.020 SOD-123H (mm) (inch) SYMBOL E 1.75 ± 0.10 0.069 ± 0.004 F 3.50 ± 0.10 0.138 ± 0.004 P 4.00 ± 0.10 0.157 ± 0.004 P0 4.00 ± 0.10 0.157 ± 0.004 P1 2.00 ± 0.10 0.079 ± 0.004 T 0.23 ± 0.10 W 8.00 ± 0.30 0.315 ± 0.012 W1 11.40 ± 1.0 0.449 ± 0.039 SOD-123H (mm) (inch) 0.009 ± 0.004 REV: A QW-JS002 Page 3 Comchip Technology CO., LTD. Low Profile SMD Super Fast Recovery Rectifiers SMD Diodes Specialist Pinning information Pin Simplified outline Symbol PIN 1 Cathode PIN 2 Anode 1 2 1 2 Marking Code Part Number CSFMT101-G CSFMT102-G CSFMT103-G CSFMT104-G CSFMT105-G CSFMT106-G CSFMT107-G CSFMT108-G Marking Code S1 S2 S3 S4 S5 S6 S7 S8 XX xx = Product type marking code Suggested PAD Layout SOD-123H SIZE (mm) A B C D E 3.00 1.30 1.80 4.30 1.70 (inch) 0.118 0.051 0.071 0.169 B D A E C 0.067 Standard Package REEL PACK (T/R) Case Type REEL ( EA ) 3,000 BOX (EA) 30,000 CARTON ( EA ) 240,000 Reel Size (inch) 7 Type Mat’l Plastic SOD-123H REV: A QW-JS002 Page 4 Comchip Technology CO., LTD.
CSFMT105-HF
1. 物料型号: - CSFMT101-HF至CSFMT108-HF,这些型号代表了不同反向电压等级的产品。

2. 器件简介: - 这是一系列低轮廓表面贴装超快速恢复整流器,具有较小的SMD封装,比标准SOD-123薄40%,具备高电流能力、超快速恢复时间,适用于开关模式应用,并且具有高浪涌电流能力。

3. 引脚分配: - PIN 1:阴极(Cathode) - PIN 2:阳极(Anode)

4. 参数特性: - 反向电压:50至600伏特不等 - 最大连续反向电压:与反向电压相同 - 最大RMS电压:35至420伏特不等 - 最大平均正向电流:1.0安培 - 最大正向电压:0.95至1.70伏特不等(在1.0A下) - 反向恢复时间:35纳秒(仅CSFMT104-HF型号) - 最大正向浪涌电流:25安培(仅CSFMT103-HF型号) - 最大反向电流:5.0微安(在25°C时) - 典型热阻:42°C(仅CSFMT104-HF型号) - 典型结电容:10皮法(在1MHz和4V反向电压下,仅CSFMT105-HF型号) - 工作结温:-55至+150°C - 存储温度:-65至+175°C

5. 功能详解: - 这些整流器具有优越的反向击穿性能、低漏电流、热阻,以及快速恢复时间,适用于需要高浪涌电流和快速开关的应用。

6. 应用信息: - 适用于需要高浪涌电流和快速开关的应用场合,如电源、电机驱动等。

7. 封装信息: - 封装类型为SOD-123H/MINI SMA,符合ROHS要求的无铅部件,环氧树脂材料为UL94-V0级阻燃。
CSFMT105-HF 价格&库存

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