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CURA155

CURA155

  • 厂商:

    COMCHIP(典琦)

  • 封装:

  • 描述:

    CURA155 - SMD Ultra Fast Recovery Rectifier - Comchip Technology

  • 数据手册
  • 价格&库存
CURA155 数据手册
SMD Ultra Fast Recovery Rectifier COMCHIP w ww.comchip.com.tw C URA151 Thru CURA157 R everse Voltage: 50 - 1000 Volts Forward Current: 1.5 Amp Features I deal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Fast recovery time: 50 - 75 nS Low leakage current DO-214AC (SMA) 0.067(1.70) 0.051(1.29) 0.180(4.57) 0.160(4.06) 0.110(2.79) 0.086(2.18) Mechanical data C ase: JEDEC DO-214AC molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight: 0.063 gram 0.091(2.31) 0.067(1.70) 0.059(1.50) 0.035(0.89) 0.012(0.31) 0.006(0.15) 0.209(5.31) 0.185(4.70) 0.008(0.20) 0.004(0.10) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characterics P arameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 1.5 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol V RRM V DC V RMS I FSM CURA 151 50 50 35 CURA 152 100 100 70 CURA 153 200 200 140 CURA 154 400 400 280 CURA 155 600 600 420 CURA 156 800 800 560 CURA 157 1 000 1000 700 Unit V V V A 50 Io VF Trr IR R 1 .0 50 1.5 1 .3 1 .7 75 5 .0 100 20 -55 to +150 -55 to +150 A V nS uA JL C /W C C Tj T STG N ote 1: Thermal resistance from junction to lead, 8.0x8.0mm square (0.13 mm thick) land areas. M DS0210013B Page 1 SMD Ultra Fast Recovery Rectifier S MD COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CURA151 Thru CURA157) Fig. 1 - Reverse Characteristics 1000 10 Tj=25 C Pulse width 300uS 4% duty cycle F ig.2 - Forward Characteristics R everse Current ( uA ) Tj=125 C 100 Forward current ( A ) 1.0 CURA151-153 0.1 10 1.0 Tj=25 C CURA154 0. 01 0.1 0 CURA155-157 20 40 60 80 100 120 140 0.001 0 0 .2 0.4 0.6 0.8 1.0 1.2 1.4 P ercent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig. 3 - Junction Capacitance 175 150 125 100 75 50 25 Fig. 4 - Non Repetitive Forward Surge Current Peak Surge Forward Current ( A ) 50 8.3mS Single Half Sine Wave JEDEC methode J unction Capacitance (pF) Tj=25 C f=1.0MHz Vsig=50mV p-p 40 30 20 10 Tj=25 C 0 0 0 .1 1.0 10 100 1000 1 5 10 50 1 00 Reverse Voltage (V) N umber of Cycles at 60Hz Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A Fig. 6 - Current Derating Curve 2.1 Average Forward Current ( A ) trr | | | | | | | | 1.8 1.5 1.2 0.9 0.6 0.3 00 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 -0.25A Single Phase Half Wave 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 25 50 75 100 125 150 175 Ambient Temperature ( C) MDS0210013B Page 2
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