SMD Ultra Fast Recovery Rectifier
COMCHIP
www.comchiptech.com
C URL101 Thru CURL107
R everse Voltage: 50 - 1000 Volts Forward Current: 1.0 Amp
F eatures
I deal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Ultra fast recovery time: 50 - 75 nS Low leakage current
DO-213AB (Plastic Melf)
0.022(0.55) Max.
0.205(5.2) 0.195(4.8)
Mechanical data
C ase: DO-213AB molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.116 gram
0.105(2.67) 0.095(2.40)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characterics
P arameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 1.0 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol V RRM V DC V RMS I FSM CURL 101 50 50 35 CURL 102 100 100 70 CURL 103 200 200 140 CURL 104 400 400 280 CURL 105 600 600 420 CURL 106 800 800 560 CURL 107 1000 1000 700
U nit
V V V A
30
Io VF Trr IR R 1.0 50
1.0 1.3 1.7 75 5.0 100 60 -55 to +150 -55 to +150
A V nS uA
JA
C /W C C
Tj T STG
Note 1: Thermal resistance from junction to ambient.
M DS0210011B
Page 1
SMD Ultra Fast Recovery Rectifier
COMCHIP
www.comchiptech.com
Rating and Characteristic Curves (CURL101 Thru CURL107)
Fig. 1 - Reverse Characteristics
1000
10
1-1 03 10 CU RL 4
F ig.2 - Forward Characteristics
R everse Current ( uA )
Forward Current ( A )
100
CU
1.0
RL
Tj=125 C
10
1.0
Tj=25 C
0.01
Tj=25 C Pulse width 300uS 4% duty cycle
0.1 0
0.001
20
40
60
80
100 120
140
0 .4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Forward Voltage (V)
P ercent of Rated Peak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
70 30
Fig. 4 - Non Repetitive Forward Surge Current
Peak Surge Forward Current ( A )
8.3mS Single Half Sine Wave JEDEC methode
J unction Capacitance (pF)
60 50 40 30
CU CU RL 10
= 1MHz and applied 4VDC reverse voltage
25 20 15 10 T j=25 C 5 0
RL 5-
10
20 10 0 0.1
1-
10
10
4
7
1.0
10
100
1000
1
CU
0.1
5
RL
10
10
5-
10
10
7
50
1 00
Reverse Voltage (V)
Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics
50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A
Fig. 6 - Current Derating Curve
1.4
Average Forward Current ( A )
trr
| | | | | | | |
1.2 1.0 0.8 0.6 0.4 0.2 00
(+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T.
() PULSE GENERATOR (NOTE 2) (+) 0 -0.25A
Single Phase Half Wave 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm
25
50
75
100
125
150
175
Ambient Temperature ( C)
MDS0210011B
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