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CURM101-G

CURM101-G

  • 厂商:

    COMCHIP(典琦)

  • 封装:

    SOD-123T

  • 描述:

    DIODE GEN PURP 50V 1A MINISMA

  • 数据手册
  • 价格&库存
CURM101-G 数据手册
SMD Ultra Fast Recovery Rectifier SMD Diodes Specialist C URM101-G Thru CURM107-G R everse Voltage: 50 - 1000 Volts Forward Current: 1.0 Amp Features I deal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Exceeds environmental standard MIL-S19500/228 Low leakage current Mini SMA 0.154(3.9) 0.138(3.5) 0.012(0.3) Typ. 0.071(1.8) 0.055(1.4) Mechanical data C ase: Mini SMA/SOD-123 molded plastic Terminals: solderable per MIL-STD750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight: 0.04 gram 0.126(3.2) 0.110(2.8) 0.067(1.7) 0.051(1.3) 0.035(0.9) Typ. 0.035(0.9) Typ. Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics P arameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 1.0 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Typical. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol V RRM V DC V RMS I FSM CURM 101-G 50 50 35 CURM 102-G 100 100 70 CURM 103-G 200 200 140 CURM 104-G 400 400 280 CURM 105-G 600 600 420 CURM 106-G 800 800 560 CURM 107-G 1000 1000 700 Unit V V V 30 A Io VF Trr IR R 1 .0 50 1.0 1 .3 1 .7 75 5 .0 150 42 -55 to +150 - 5 5 t o + 1 50 A V nS uA JA ° C/W °C °C Tj T STG Note 1: Thermal resistance from junction to ambient. Rev. A Q W-BU007 Page 1 SMD Ultra Fast Recovery Rectifier SMD Diodes Specialist Rating and Characteristic Curves (CURM101-G Thru CURM107-G) F ig.1 - Forward Characteristics 10 G 34G 10 10 F ig.2 - Junction Capacitance 1 75 G- RM CU 10 7- G 1.0 CU J unction Capacitance (pF) 120 100 80 60 40 20 0 = 1MHz and applied 4VDC reverse voltage Forward Current ( A ) RM 1- 0 .1 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 0.001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Forward Voltage (V) CU RM 10 5- G- 10 0.01 0.1 1.0 10 100 Reverse Voltage (V) Fig. 3 - Test Circuit Diagram and Reverse Recovery Time Characteristics Peak surge Forward Current ( A ) 30 24 Fig. 4 - Non Repetitive Forward Surge Current 8 .3mS Single Half Sine Wave JEDEC methode 50W NONINDUCTIVE 10W NONINDUCTIVE (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 18 Tj=25 C 12 NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. 6 0 1 5 10 50 100 trr N umber of Cycles at 60Hz +0.5A | | | | | | | | 0 -0.25A Fig. 5 - Current Derating Curve 1.4 Average Forward Current ( A ) 1.2 1.0 0.8 0.6 0.4 0.2 00 -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm Single Phase Half Wave 60Hz 25 50 75 100 125 150 175 Ambient Temperature ( C) Rev. A QW-BU007 Page 2
CURM101-G 价格&库存

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