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CZRNC55C33-G

CZRNC55C33-G

  • 厂商:

    COMCHIP(典琦)

  • 封装:

    1206

  • 描述:

    DIODE ZENER 33V 500MW 1206

  • 详情介绍
  • 数据手册
  • 价格&库存
CZRNC55C33-G 数据手册
SMD Zener Diode CZRNC55C2V0-G Thru. CZRNC55C75-G Voltage: 2.0 to 75 Volts Power: 0.5 Watts RoHS Device Features 1206 - Silicon planar power zener diodes. - Leadfree and RoHS Compliance components. 0.034(3.40) 0.118(3.00) 0.067(1.70) 0.051(1.30) 24 Mechanical data - Size: 1206 - Weight: approx. 10mg 0.037(0.95) 0.030(0.75) - Marking: Zener voltage & cathode band. 0.030(0.75) 0.014(0.35) Dimensions in inches and (millimeter) 1) Maximum Rating and Thermal Characteristics (Tamb = 25°C ) Symbol Value Unit Power Dissipation Ptot 500 mW Repetitive Peak Forward Current IFRM 200 mA TJ 150 °C RөJA 300 °C/W TOPR,TSTG -55 to +150 °C Symbol Max Unit VF 1.5 V Parameter Junction Temperature Thermal Resistance Junction To Ambient Air Operating & Storage Temperature Range Notes: 1)Valid provided that electrodes are kept at ambient temperature 1) Electrical Characteristics (Tamb = 25°C ) Parameter Forward Voltage At IF = 200mA Zener Voltage Tolerance, C=±5% Notes: 1)Valid provided that electrodes are kept at ambient temperature REV:A Page 1 QW-BZ024 Comchip Technology CO., LTD. SMD Zener Diode Electrical Characteristics(Ta = 25°C) Part Number VZ @ IZT CZRNC55C2V0-G CZRNC55C2V2-G CZRNC55C2V4-G CZRNC55C2V7-G CZRNC55C3V0-G CZRNC55C3V3-G CZRNC55C3V6-G CZRNC55C3V9-G CZRNC55C4V3-G CZRNC55C4V7-G CZRNC55C5V1-G CZRNC55C5V6-G CZRNC55C6V2-G CZRNC55C6V8-G CZRNC55C7V5-G CZRNC55C8V2-G CZRNC55C9V1-G CZRNC55C10-G CZRNC55C11-G CZRNC55C12-G CZRNC55C13-G CZRNC55C15-G CZRNC55C16-G CZRNC55C18-G CZRNC55C20-G CZRNC55C22-G CZRNC55C24-G CZRNC55C27-G CZRNC55C30-G CZRNC55C33-G CZRNC55C36-G CZRNC55C39-G CZRNC55C43-G CZRNC55C47-G CZRNC55C51-G CZRNC55C56-G CZRNC55C62-G CZRNC55C68-G CZRNC55C75-G Maximum Nominal Zener Voltage Maximum Reverse Leakage Current Marking Code Zener Impedance ZZT @ IZT ZZK @ IZK IR @ VR Min V Max V (Ω) (mA) (Ω) (mA) (uA) (V) 1.90 2.10 85 5.0 600 1.0 100 1 2.09 2.31 85 5.0 600 1.0 75 1 2V2 2.28 2.52 85 5.0 600 1.0 50 1 2V4 2V7 2 2.57 2.84 85 5.0 600 1.0 10 1 2.85 3.15 85 5.0 600 1.0 4 1 3 3.14 3.47 85 5.0 600 1.0 2 1 3V3 3.42 3.78 4.10 85 5.0 600 1.0 2 1 3V6 85 5.0 600 1.0 2 1 3V9 4.09 4.52 80 5.0 600 1.0 1 1 4V3 4.47 4.94 70 5.0 600 1.0 0.5 1 4V7 4.85 5.36 50 5.0 550 1.0 0.1 1 5V1 5.32 5.88 30 5.0 450 1.0 0.1 1 5V6 5.89 6.51 10 5.0 200 1.0 0.1 2 6V2 6.46 7.14 8 5.0 150 1.0 0.1 3 6V8 7.13 7.88 7 5.0 50 1.0 0.1 5 7V5 3.71 7.79 8.61 7 5.0 50 1.0 0.1 6.2 8V2 8.65 9.56 10 5.0 50 1.0 0.1 6.8 9V1 9.50 10.50 15 5.0 70 1.0 0.1 7.5 10 10.45 11.55 20 5.0 70 1.0 0.1 8.2 11 11.40 12.60 20 5.0 90 1.0 0.1 9.1 12 12.35 13.65 26 5.0 110 1.0 0.1 10 13 14.25 15.75 30 5.0 110 1.0 0.1 11 15 15.20 16.80 40 5.0 170 1.0 0.1 12 16 17.10 18.90 50 5.0 170 1.0 0.1 13 18 19.00 21.00 55 5.0 220 1.0 0.1 15 20 20.90 22.80 23.10 25.20 55 5.0 220 1.0 0.1 16 22 80 5.0 220 1.0 0.1 18 24 25.65 28.35 220 1.0 0.1 20 27 31.50 80 80 5.0 28.50 5.0 220 1.0 0.1 22 30 31.35 34.65 80 5.0 220 1.0 0.1 24 33 34.20 37.05 37.80 40.95 5.0 2.5 220 500 1.0 0.5 0.1 0.1 27 29.3 36 39 40.85 45.15 80 90 90 2.5 600 0.5 0.1 32.3 43 44.65 49.35 110 2.5 700 0.5 0.1 35.3 47 48.45 53.20 53.55 58.80 2.5 2.5 700 1000 0.5 0.5 0.1 0.1 38.3 42 51 56 58.90 65.10 125 135 150 2.5 1000 0.5 0.1 46.5 62 64.60 71.40 200 2.5 1000 0.5 0.1 51 68 71.25 78.75 250 2.5 1500 0.5 0.1 56.3 75 REV:A Page 2 QW-BZ024 Comchip Technology CO., LTD. SMD Zener Diode RATING AND CHARACTERISTIC CURVES (CZRNC55C2V0-G Thru CZRNC55C75-G) Ptot , Dissipation power dissipation, (mW) Fig.1 Forward Current vs Forward Voltage 200 180 160 IF , (mA) 140 120 100 80 60 40 20 0 0.6 Fig.2 Power De-rating 600 500 400 300 200 100 0 0.7 0.8 0.9 1.0 1.1 1.2 0 VF , (V) 40 80 120 160 200 Tamb - Ambient Temperature , (°C) REV:A Page 3 QW-BZ024 Comchip Technology CO., LTD. SMD Zener Diode Reel Taping Specification d P0 P1 T E Index hole F W B C Polarity P A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed 1206 1206 SYMBOL A B C d D D1 D2 (mm) 2.00 ± 0.20 3.60 ± 0.20 0.95 ± 0.05 1.50 ± 0.10 178.0±1.00 60.0±1.00 13.0 ±0.30 (inch) 0.079 ± 0.008 0.142 ± 0.008 0.037 ± 0.002 0.059 ± 0.004 7.007±0.040 2.362±0.040 0.512 ± 0.012 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 8.00 ± 0.20 9.50 ± 0.30 (inch) 0.689 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.315 ± 0.008 0.374 ±±0.012 REV:A Page 4 QW-BZ024 Comchip Technology CO., LTD. SMD Zener Diode Suggested PAD Layout D 1206 A SIZE (mm) (inch) A 3.00~3.40 0.118~0.134 B 0.80~1.20 0.032~0.047 C 1.50~1.70 0.059~0.067 D 3.80~4.60 0.150~0.181 E 2.20 0.087 E C B Standard Packaging REEL PACK Case Type 1206 REEL Reel Size ( pcs ) (inch) 5,000 7 REV:A Page 5 QW-BZ024 Comchip Technology CO., LTD.
CZRNC55C33-G
物料型号:CZRNC55C2V0-G 至 CZRNC55C75-G

器件简介:硅平面功率齐纳二极管,无铅和RoHS合规组件。

引脚分配:文档中未明确提供引脚分配信息。

参数特性: - 功率耗散:500 mW - 结温:150°C - 热阻:300°C/W - 正向电压:在200mA下为1.5V - 重复峰值正向电流:200mA

功能详解: - 齐纳二极管的电压容差为±5% - 反向漏电流最大值根据不同型号有所不同,范围从0.1uA至600uA - 齐纳阻抗最大值从12Ω至75Ω不等

应用信息:文档中未明确提供应用信息

封装信息: - 尺寸:1206 - 重量:大约10毫克 - 标记:齐纳电压和阴极带。
CZRNC55C33-G 价格&库存

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