CZRSC55C3V3-G

SMD Zener Diode SMD Diodes Specialist CZRSC55C2V0-G Thru CZRSC55C36-G Voltage: 2.0 to 36 Volts Power: 0.5 Watts RoHS Device Features 0805 - This diode is also available in other case styles including the 1206 case with the type designation. 0.086(2.20) 0.071(1.80) - Sillcon Planar Power Zener Diode. 12 0.057(1.45) 0.041(1.05) Mechanical data - Case: 0805 0.037(0.95) 0.029(0.75) - Weight: approx. 6mg 0.026(0.65) 0.010(0.25) - Marking: Cathode band. Dimensions in inches and (millimeter) Maximum Rating and Thermal Characteristics (Tamb = 25°C ) Symbol Value Unit Ptot 500 mW TJ 175 °C Storage Temperature Range TSTG -65 to +175 °C Thermal Resistance Junction to Ambient Air RөJA 300 °C/W Symbol Max Unit VF 1.5 V Parameter Power Dissipation Junction Temperature Electrical Characteristics Parameter Forward voltage IF=200mA REV:A Page 1 QW-BZ023 Comchip Technology CO., LTD. SMD Zener Diode SMD Diodes Specialist Electrical Characteristics(Ta = 25°C) Part Number VZ @ IZT CZRSC55C2V0-G CZRSC55C2V2-G CZRSC55C2V4-G CZRSC55C2V7-G CZRSC55C3V0-G CZRSC55C3V3-G CZRSC55C3V6-G CZRSC55C3V9-G CZRSC55C4V3-G CZRSC55C4V7-G CZRSC55C5V1-G CZRSC55C5V6-G CZRSC55C6V2-G CZRSC55C6V8-G CZRSC55C7V5-G CZRSC55C8V2-G CZRSC55C9V1-G CZRSC55C10-G CZRSC55C11-G CZRSC55C12-G CZRSC55C13-G CZRSC55C15-G CZRSC55C16-G CZRSC55C18-G CZRSC55C20-G CZRSC55C22-G CZRSC55C24-G CZRSC55C27-G CZRSC55C30-G CZRSC55C33-G CZRSC55C36-G Maximum Maximum Reverse DC Zener Leakage Current Marking Current Code Maximum Nominal Zener Voltage Zener Impedance ZZT @ IZT ZZK @ IZK IR @ VR IZM Min V Max V (Ω) (mA) (Ω) (mA) (uA) (V) (mA) 1.90 2.10 85 5.0 600 1.0 100 4.0 241 2V0 2.09 2.31 85 5.0 600 1.0 75 5.2 440 2V2 2.28 2.52 85 5.0 600 1.0 50 6.0 400 2V4 2.57 2.84 85 5.0 600 1.0 10 6.5 364 2V7 2.85 3.15 85 5.0 600 1.0 4 7.0 328 3V0 3.14 3.47 85 5.0 600 1.0 2 8.0 300 3V3 3.42 3.78 4.10 85 5.0 600 1.0 2 8.4 272 3V6 85 5.0 600 1.0 2 9.1 250 3V9 4.09 4.52 80 5.0 600 1.0 1 9.9 230 4V3 4.47 4.94 70 5.0 600 1.0 0.5 11.4 200 4V7 4.85 5.36 50 5.0 550 1.0 0.1 12.2 186 5V1 5.32 5.88 30 5.0 450 1.0 0.1 13.7 166 5V6 5.89 6.51 10 5.0 200 1.0 0.1 15.2 150 6V2 6.46 7.14 8 5.0 150 1.0 0.1 16.7 136 6V8 7.13 7.88 7 5.0 50 1.0 0.1 18.2 124 7V5 3.71 7.79 8.61 7 5.0 50 1.0 0.1 20.6 110 8V2 8.65 9.56 10 5.0 50 1.0 0.1 22.8 100 9V1 9.50 10.50 15 5.0 70 1.0 0.1 25.1 90 10 10.45 11.55 20 5.0 70 1.0 0.1 27.4 82 11 11.40 12.60 20 5.0 90 1.0 0.1 29.7 76 12 12.35 13.65 26 5.0 110 1.0 0.1 32.7 68 13 14.25 15.75 30 5.0 110 1.0 0.1 35.8 62 15 15.20 16.80 40 5.0 170 1.0 0.1 38.8 58 16 17.10 18.90 50 5.0 170 1.0 0.1 42.6 52 18 19.00 21.00 55 5.0 220 1.0 0.1 47.1 48 20 20.90 22.80 23.10 25.20 55 5.0 220 1.0 0.1 51.7 44 22 80 5.0 220 1.0 0.1 56.0 40 24 25.65 28.35 220 1.0 0.1 62.2 36 27 31.50 80 80 5.0 28.50 5.0 220 1.0 0.1 69.2 32 30 31.35 34.65 80 5.0 220 1.0 0.1 76.0 30 33 34.20 37.80 80 5.0 220 1.0 0.1 83.6 13 36 REV:A Page 2 QW-BZ023 Comchip Technology CO., LTD. SMD Zener Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CZRSC552V0-G Thru CZRSC55C36-G) Fig.2 Total Power Dissipation vs. Ambient Temperature 600 500 Ptot , Total Power Dissipation, (mW) Rthja,Therm Resist Junction / Ambient , (K/W) Fig.1 Typical thermal resistance v.s. lead length 400 300 200 100 0 500 400 300 200 100 0 0 10 5 15 0 20 40 I - Lead length , (mm) 80 120 160 200 180 240 20 25 Tamb - Ambient Temperature , (°C) Fig.4 Maximum surge power Fig.3 Typical Change of Working Voltage Under Operating Conditions at Tamb=25°C 1.3 Vzn - Relative Voltage Change Vz , Voltage change , (mV) 1000 Tj=25°C 100 IZ=5mA 10 1.2 1.1 1.0 0.9 0.8 -60 1 0 5 10 15 20 0 60 120 25 TJ - Junction Temperature , (°C) Vz-Z-Voltage , (V) Fig.5- Temperature Coefficient of Vz vs Z-Voltage Fig.6-Diode Capacitance vs. Z-Voltage 200 CD - Diode Capacitance , (pF) -4 Temperature Coefficient of Vz(10 / K) 15 10 5 IZ=5mA 0 -5 150 100 VR=2V Tj=25°C 50 0 0 10 20 30 40 50 0 Vz-Z- Voltage , (V) 5 10 15 Vz-Z- Voltage , (V) REV:A Page 3 QW-BZ023 Comchip Technology CO., LTD. SMD Zener Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CZRSC552V0-G Thru CZRSC55C36-G) Fig.7- Forward Current Forward Voltage Fig.4- Z-Current vs. Z-Voltage 50 Ptot=500mW TAMB=25°C 40 10 Iz - Z-Current , (mA) IF - Forward Current , (mA) 100 1 0.1 30 20 10 0.01 0 0.001 0 0.4 0.2 0.6 0.8 15 1.0 20 VF - Forward Voltage , (V) 30 35 VZ -Z-Voltage , (V) Fig.10- Differential Z-Resistance vs. Z-Voltage Fig.8- Z-Current vs. Z-Voltage 1000 100 Iz - Z-Current , (mA) 80 Iz - Z-Current , (mA) 25 60 40 IZ=1mA 100 5mA 10 10mA 20 Tj=25°C 0 0 8 4 12 16 20 1 0 5 10 15 20 25 Vz-Z- Voltage,(V) VZ-Z-Voltage(V) Fig.10- Thermal Tesponse Zthp - Themal Resistance for Pulse Cond, (K/W) 1000 Tp/T=0.5 100 Tp/T=0.2 Single Pulse Tp/T=0.01 10 RthJA=300k/W T=Tjmax-Tamb Tp/T=0.02 Tp/T=0.1 Tp/T=0.05 2 1 0 iZM=-VZ + VZ+4rzj X T/Z thp) ½ )/(2rzj) 0 10 10 1 10 2 tp - Pulse Length , (ms) REV:A Page 4 QW-BZ023 Comchip Technology CO., LTD. SMD Zener Diode SMD Diodes Specialist Reel Taping Specification d P0 P1 T E Index hole F W B Polarity P C A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... 10 pitches (min) ....... ....... Start 10 pitches (min) Direction of Feed 0805 0805 C d D D1 D2 0.95 ± 0.05 1.50 ± 0.10 178.0±1.00 60.0±1.00 13.0 ±0.30 0.059 ± 0.004 7.007±0.040 2.362±0.040 0.512 ± 0.012 P P0 P1 W W1 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 8.00 ± 0.20 9.50 ± 0.30 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.315 ± 0.008 0.374 ±0.012 SYMBOL A B (mm) 1.65 ± 0.20 (inch) 0.065 ± 0.008 SYMBOL E F (mm) 1.75 ± 0.10 (inch) 0.689 ± 0.004 2.40 ± 0.20 0.094 ± 0.008 0.037 ± 0.002 REV:A Page 5 QW-BZ023 Comchip Technology CO., LTD. SMD Zener Diode SMD Diodes Specialist Suggested PAD Layout D 0805 A SIZE (mm) (inch) A 2.20 0.087 B 1.10 0.043 C 1.30 0.051 D 3.30 0.130 E 1.10 0.043 E C B Standard Package Qty per Reel Reel Size (Pcs) (inch) 5000 7 Case Type 0805 REV:A Page 6 QW-BZ023 Comchip Technology CO., LTD.