MBR2040CT-G

Comchip SMD Schottky Barrier Rectifiers SMD Diode Specialist MBR2030CT-G Thru. MBR20150CT-G Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency. -High current capability, low VF. -High surge capacity. -For use in low voltage, high frequency inverters, free wheeling,and polarity protection applications. 0.108 (2.75) 0.153(3.90) 0.146(3.70) 0.413(10.50) 0.347( 9.50) 0.187(4.70) 0.148(3.80) 0.055(1.40) 0.047(1.20) 0.270(6.90) 0.230(5.80) 0.610(15.50) 0.583(14.80) Mechanical Data 0.157 (4.0) 0.051(1.30) MAX -Case: TO-220AB, molded plastic 0.583(14.80) 0.531(13.50) -Epoxy: UL 94-V0 rate flame retardant. -Polarity: As marked on the body. 0.024(0.60) 0.012(0.30) 0.102(2.60) 0.091(2.30) 0.043(1.10) 0.032(0.80) -Mounting position: Any 0.126 (3.20) -Weight: 2.24 grams Dimensions in inches and (millimeter) Electrical Characteristics (at T =25°C unless otherwise noted) A Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. Parameter Symbol MBR MBR MBR MBR MBR MBR MBR 2030CT-G 2040CT-G 2050CT-G 2060CT-G 2080CT-G 20100CT-G 20150CT-G Unit Maximum Recurrent Peak Reverse Voltage VRRM 30 40 50 60 80 100 150 V Maximum RMS Voltage VRMS 21 28 35 42 56 70 105 V Maximum DC Blocking Voltage VDC 30 40 50 60 80 100 150 V Maximum Average Forward Rectified Current ( See Fig.1 ) I(AV) 20.0 A Peak Forward Surage Current , 8.3ms Single Half Sine-Wave Super Imposed On Rated Load(JEDEC Method) IFSM 150 A IF=10A@ TJ= 25°C Peak Forward Voltage (Note 1) IF=10A@ TJ=125°C IF=20A@ TJ= 25°C VF IF=20A@ TJ=125°C Maximum DC Reverse Current @ TJ= 25°C at Rate DC Blocking Voltage @ TJ= 125°C IR Typical Junction Capacitance (Note2) CJ Typical Thermal Resistance (Note3) Operating Temperature Range Storage Temperature Range 0.57 0.84 0.72 0.80 0.70 0.95 0.85 0.85 0.75 0.95 0.85 0.95 0.85 1.05 0.95 0.10 0.10 0.10 0.10 15.0 10.0 7.50 5.00 400 RθJC mA pF 320 1.50 V 3.50 °C/W TJ -55 to +150 °C TSTG -55 to +175 °C NOTES: 1. 300us pulse width,2% duty cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance junction to case. REV:B Page 1 QW-BB046 Comchip Technology CO., LTD. Comchip SMD Schottky Barrier Rectifiers SMD Diode Specialist RATING AND CHARACTERISTIC CURVES (MBR2030CT-G Thru. MBR20150CT-G) FIG.1- Forward Current Derating Curve FIG.2- Maximum Non-Repetitive Surge Current Peak Forward Surge Current, ( A ) Average Forward Current, ( A ) 25.0 20.0 15.0 10.0 Single Phase Half Wave 60Hz Resistive or Inductive Load 5.0 300 Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 250 200 150 100 50 0 0 0 25 75 50 100 125 150 175 1 10 20 50 100 Number Of Cycles at 60Hz FIG.3- Typical Rever Characteristics FIG.4- Typical Forward Characteristics 1000 100 MBR2030CT-G~MBR2060CT-G MBR2080CT-G~MBR20150CT-G 100 10 MBR2030CT-G~ MBR2040CT-G Instantaneous Forward Current, ( A ) Instantaneous Reverse Current, ( mA ) 5 2 Case Temperature, (°C) TJ=125°C 1.0 0.1 TJ=25°C 0.01 10 MBR2050CT-G~ MBR2060CT-G MBR20150CT-G 1 MBR2080CT-G~ MBR20100CT-G TJ=25°C PULSE WIDTH 300US 2% DUTY CYCLE 0.1 0 20 40 60 80 100 120 140 0.1 Percent Of Rated Peak Reverse Voltage, ( %) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Instantaneous Forward Voltage, ( V ) FIG.5- Typical Junction Capacitance 1000 MBR2030CT-G~ MBR20400CT-G Capacitance, (pF) MBR2030CT-G~ MBR20400CT-G 100 TJ=25°C f=1MHz 10 0.1 1 10 100 Reverse Voltage, (V) REV:B Page 2 QW-BB046 Comchip Technology CO., LTD. Comchip SMD Schottky Barrier Rectifiers SMD Diode Specialist Marking Code Part Number Marking code MBR2030CT-G MBR2030CT MBR2040CT-G MBR2040CT MBR2050CT-G MBR2050CT MBR2060CT-G MBR2060CT MBR2080CT-G MBR2080CT MBR20100CT-G MBR20100CT MBR20150CT-G MBR20150CT C MBRXXXXCT XXXX = Product type marking code C = Compchip Logo Standard Packaging TUBE PACK Case Type TO-220AB TUBE BOX ( pcs ) ( pcs ) 50 8,000 REV:B Page 3 QW-BB046 Comchip Technology CO., LTD.