MMBT2222A

Small Signal Transistor (NPN) MMBT2222A Features NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. COMCHIP www.comchip tech .com TO-236AB (SOT-23) Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g .122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33) 1 2 max. .004 (0.1) Pin Configuration 1 = Base 2 = Emitter 3 = Collector Top View Mounting Pad Layout .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) 0.035 (0.9) 0.079 (2.0) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) 0.037 (0.95) 0.037 (0.95) Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation on FR-5 Board TA = 25°C Derate above 25°C on Alumina Substrate(2) TA = 25°C Derate above 25°C FR-5 Board Alumina Substrate (1) Ratings at 25°C ambient temperature unless otherwise specified. Symbol VCBO VCEO VEBO IC Ptot Ptot RΘJA Tj TS Value 75 40 6.0 600 225 1.8 300 2.4 556 417 150 –55 to +150 Unit V V V mA mW mW/°C mW mW/°C °C/W °C °C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range Notes: (1) FR-5 = 1.0 x 0.75 x 0.062 in. (2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Page 1 .045 (1.15) .037 (0.95) Small Signal Transistor (NPN) COMCHIP www.comchip tech.com Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Test Condition VCE = 10 V, IC = 0.1 mA VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA TA = -55°C VCE = 10 V, IC = 150 mA(1) VCE = 10 V, IC = 500 mA(1) VCE = 1.0 V, IC = 150 mA(1) IC = 10 µA, IE = 0 IC = 10 mA, IB = 0 IC = 10 µA, IC = 0 IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VEB = 3 V, VCE = 60 V VCB = 60 V, IE = 0 VCB = 50 V, IE = 0 V TA = 125°C VEB = 3 V, VCE = 60 V VEB = 3 VDC, IC = 0 VCE = 20 V, IC = 20 mA f = 100 MHz VCB = 10 V, f = 1 MHz, IE = 0 VEB = 0.5 V, f = 1 MHz, IC = 0 VCE = 10 V, IC = 100 µA, RS = 1 kΩ, f = 1 kHz VCE = 10 V, IC = 1 mA f = 1 kHz VCE = 10 V, IC = 10 mA f = 1 kHz VCE = 10 V, IC = 1 mA, f = 1 kHz VCE = 10 V, IC = 10 mA, f = 1 kHz VCE = 10 V, IC = 1 mA, f = 1 kHz VCE = 10 V, IC = 1 mA, f = 1 kHz VCE = 10 V, IC = 10 mA, f = 1 kHz Min 35 50 75 35 100 40 50 75 40 6.0 — — 0.6 — — — — — — 300 — — — 2 0.25 50 75 50 75 5.0 25 Typ — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — Max — — — — 300 — — — — — 0.3 1.0 1.2 2.0 10 10 10 20 100 — 8 25 4.0 8.0 Unit DC Current Gain hFE — Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) Collector Cut-off Current Collector Cut-off Current Base Cut-off Current Emitter Cut-off Current Current Gain-Bandwidth Product Output Capacitance Input Capacitance Noise Figure (1) V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICEX ICBO IBL IEBO fT Cobo Cibo NF V V V V V nA nA µA nA nA MHz pF pF dB Input Impedance hie kΩ 1.25 300 375 300 375 35 200 µS — Small Signal Current Gain hfe Voltage Feedback Ratio hre — Output Admittance hoe Note: (1) Pulse Test: Pulse width ≤ 300 µs - Duty cycle ≤ 2% Page 2 Small Signal Transistor (NPN) COMCHIP www.comchip tech .com Electrical Characteristics Parameter Collector Base Time Constant Delay Time (see fig. 1) Rise Time (see fig. 1) Storage Time (see fig. 2) Fall Time (see fig. 2) (TJ = 25°C unless otherwise noted) Symbol rb’CC td tr ts tf Test Condition IE = 20 mA, VCB = 20 V, f = 31.8 MHz IB1 = 15 mA, IC = 150 mA, VCC = 30V, VBE = -0.5 V IB1 = 15 mA, IC = 150 mA, VCC = 30V, VBE = -0.5 V IB1 = IB2 = 15 mA, IC = 150 mA, VCC = 30V IB1 = IB2 = 15 mA, IC = 150 mA, VCC = 30V Min — — — — — Typ — — — — — Max 150 10 25 225 60 Unit ps ns ns ns ns Switching Time Equivalent Test Circuit Figure 1. Turn-ON Time 1.0 to 100 µs, DUTY CYCLE ≈ 2% +16 V 0 -2 V < 2 ns 1kΩ C S* < 10 pF Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope +30V 200Ω Figure 2. Turn-OFF Time 1.0 to 100 µs, DUTY CYCLE ≈ 2% +16 V 0 -14 V < 20 ns -4 V 1kΩ C S* < 10 pF +30V 200Ω Page 3