General Purpose Transistor (PNP)
COMCHIP
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MMBT2907A
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT2222A)
Ideal for Medium Power Amplification and Switching
TO-236AB (SOT-23)
.122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33) 1 2 max. .004 (0.1)
Pin Configuration 1 = Base 2 = Emitter 3 = Collector
Mechanical Data
Case: SOT-23 Plastic Package Weight: approx. 0.008g
Top View
COLLECTOR
3 1
BASE
.007 (0.175) .005 (0.125)
.037(0.95) .037(0.95)
2
EMITTER
.016 (0.4)
.016 (0.4)
.102 (2.6) .094 (2.4)
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol VCEO VCBO VEBO IC Symbol PD 2907 –40 –60 –5.0 –600 Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 2907A –60
Ratings at 25°C ambient temperature unless otherwise specified.
Unit Vdc Vdc Vdc mAdc Unit mW mW/°C °C/W mW mW/°C °C/W °C
MDS030300B1
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.045 (1.15) .037 (0.95)
General Purpose Transistor (PNP)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol
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Min Max
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Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCE = –30 Vdc, VBE(off) = –0.5 Vdc) Collector Cutoff Current (VCB = –50 Vdc, IE = 0) (VCB = –50 Vdc, IE = 0, TA = 125°C) Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) MMBT2907 MMBT2907A MMBT2907 MMBT2907A IB V(BR)CEO MMBT2907 MMBT2907A V(BR)CBO V(BR)EBO ICEX ICBO — — — — — –0.020 –0.010 –20 –10 –50 nAdc –40 –60 –60 –5.0 — — — — — –50 Vdc Vdc nAdc µAdc Vdc
ON CHARACTERISTICS
DC Current Gain (IC = –0.1 mAdc, VCE = –10 Vdc) hFE MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A VCE(sat) — — VBE(sat) — — –1.3 –2.6 –0.4 –1.6 Vdc 35 75 50 100 75 100 — 100 30 50 — — — — — — — 300 — — Vdc —
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc) (3)
(IC = –500 mAdc, VCE = –10 Vdc) (3) Collector – Emitter Saturation Voltage (3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) Base – Emitter Saturation Voltage (3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc)
1.FR-5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
MDS030300B1
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General Purpose Transistor (PNP)
COMCHIP
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SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (3),(4) (IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) fT 200 Cobo — Cibo — 30 8.0 pF — pF MHz
SWITCHING CHARACTERISTICS
Turn–On Time Delay Time Rise Time Turn–Off Time Storage Time Fall Time (VCC = –6.0 Vdc, IC = –150 mAdc, IB1 = IB2 = –15 mAdc) 15 mAdc (VCC = –30 Vdc, IC = –150 mAdc, IB1 = –15 mAdc) 15 mAdc ton td tr toff ts tf — — — — — — 45 10 40 100 80 30 ns ns
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns 0 –16 V 200 ns 50 1.0 k INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns 0 –30 V 200 ns
v
v
–30 V 200
+15 V
–6.0 V 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns
1.0 k 1.0 k 50
TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns
1N916
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
MDS030300B1
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General Purpose Transistor (PNP)
TYPICAL CHARACTERISTICS
3.0 2.0 hFE , Normalized Current Gain VCE = –1.0 V VCE = –10 V TJ = 125°C 25°C 1.0 0.7 0.5 0.3 0.2 –0.1 – 55°C
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–0.2 –0.3
–0.5 –0.7 –1.0
–2.0
–3.0
–5.0 –7.0
–10
–20
–30
–50 –70 –100
–200 –300
–500
I C, Collector Current (mA)
Figure 3. DC Current Gain
–1.0 VCE , Collector–Emitter Voltage (V)
–0.8 IC = –1.0 mA –0.6 –10 mA –100 mA –500 mA
–0.4
–0.2
0 –0.005
–0.01
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2
–0.3 –0.5 –0.7 –1.0 I B, Base Current (mA)
–2.0
–3.0
–5.0 –7.0 –10
–20 –30
–50
Figure 4. Collector Saturation Region
300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, Collector Current tr
500 VCC = –30 V IC/IB = 10 TJ = 25°C t, Time (ns) 300 200 tf 100 70 50 30 20 2.0 V –200 –300 –500 10 7.0 5.0 –5.0 –7.0 –10 t′s = ts – 1/8 tf VCC = –30 V IC/IB = 10 IB1 = IB2 TJ = 25°C
t, Time (ns)
–20 –30 –50 –70 –100 I C, Collector Current (mA)
–200 –300 –500
Figure 5. Turn–On Time
MDS030300B1 MDS030300
Figure 6. Turn–Off Time
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General Purpose Transistor (PNP)
TYPICAL SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25°C
10 10 f = 1.0 kHz 8.0 NF, Noise Figure (dB) IC = –1.0 mA, Rs = 430 Ω –500 µA, Rs = 560 Ω –50 µA, Rs = 2.7 kΩ –100 µA, Rs = 1.6 kΩ Rs = OPTIMUM SOURCE RESISTANCE NF, Noise Figure (dB) 8.0
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6.0
6.0
4.0
4.0
IC = –50 µA –100 µA –500 µA –1.0 mA
2.0
2.0
0 0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0 f, Frequency (kHz)
5.0 10
20
50
100
0
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
50 k
R s, Source Resistance (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30 f T, Current–Gain — Bandwidth Product (MHz) 20 Ceb
400 300 200
C, Capacitance (pF)
10 7.0 5.0 3.0 2.0 –0.1 Ccb
100 80 60 40 30 20 –1.0 –2.0
VCE = –20 V TJ = 25°C
–0.2 –0.3 –0.5
–1.0
–2.0 –3.0 –5.0
–10
–20 –30
–5.0
–10
–20
–50
–100 –200
–500 –1000
Reverse Voltage (VOLTS)
I C, Collector Current (mA)
Figure 9. Capacitances
Figure 10. Current–Gain — Bandwidth Product
–1.0 TJ = 25°C –0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –10 V Coefficient (mV/ ° C)
+0.5 0 RqVC for VCE(sat) –0.5 –1.0 –1.5 –2.0 VCE(sat) @ IC/IB = 10 –2.5 –0.1 –0.2 –0.5 –1.0 –2.0 RqVB for VBE
–0.6 V, Voltage (V)
–0.4
–0.2
0 –0.1 –0.2
–0.5 –1.0 –2.0 –5.0 –10 –20 I C, Collector Current (mA)
–50 –100 –200
–500
–5.0 –10 –20
–50 –100 –200 –500
I C, Collector Current (mA)
Figure 11. “On” Voltage
MDS030300B1
Figure 12. Temperature Coefficients
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