MMBT5401-HF

General Purpose Transistors MMBT5401-HF (PNP) RoHS Device Halogen Free Features - Epoxy meets UL-94 V-0 flammability rating. SOT-23 - Moisture sensitivity Level 1. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Mechanical data 1 2 0.079(2.00) 0.071(1.80) - Case: SOT-23, molded plastic. 0.008(0.20) 0.004(0.10) - Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102. 0.004(0.10) 0.000(0.00) 0.100(2.55) 0.089(2.25) 0.041(1.05) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.020(0.50) 0.012(0.30) Circuit Diagram Collector 3 Dimensions in inches and (millimeter) 1 Base 2 Emitter Maximum Ratings (at T =25°C unless otherwise noted) A Parameter Conditions Symbol Value Unit Collector-base voltage IC = -100µAdc, IE = 0 VCBO -180 V Collector-emitter voltage IC = -1mAdc, IB = 0 VCEO -160 V Emitter-base voltage IE = -10µAdc, IC = 0 VEBO -6 V Collector current IC -600 mA Collector power dissipation PC 300 mW Operation junction temperature TJ 150 °C Storage temperature range TSTG -55 to +150 °C Thermal resistance from junction to ambient RθJA 417 °C/W Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 1 QW-JTR105 Comchip Technology CO., LTD. General Purpose Transistors Electrical Characteristics (at T =25°C unless otherwise noted) A Symbol Parameter Conditions Min. Typ. Max. Unit Collector-base voltage VCBO IC = -100μAdc, IE = 0 -180 V Collector-emitter voltage VCEO IC = -1mAdc, IB = 0 -160 V Emitter-base voltage VEBO IE = -10μAdc, IC = 0 -6 V Collector-base cut-off current ICBO VCB = -120Vdc -50 nA Emitter-emitter cut-off current IEBO VEB = -4Vdc -50 nA hFE(1) VCE = -5Vdc, IC = -1mA 80 hFE(2) VCE = -5Vdc, IC = -10mA 100 hFE(3) VCE = -5Vdc, IC = -50mA 50 DC current gain Collector-emitter saturation voltage 300 IC = -10mA, IB = -1mA -0.2 V IC = -50mA, IB = -5mA -0.5 V IC = -10mA, IB = -1mA -1.0 V IC = -50mA, IB = -5mA -1.0 V 300 ΜΗz VCE(sat) Base-emitter saturation voltage VBE(sat) Transition frequency VCE = -5Vdc, IC = -10mAdc, f = 30MHz fT 100 Rating and Characteristic Curves (MMBT5401-HF) Fig.2 - DC Current Gain Fig.1 - Static Characteristic -25 1000 Ta=25°C VCE=-5V -20 -0.09mA -0.08mA -15 -0.07mA -0.06mA -0.05mA -10 -0.04mA -0.03mA -5 DC Current Gain, hFE Collector Current, IC (mA) -0.1mA Ta=125°C Ta=100°C Ta=25°C Ta=-25°C 100 -0.02mA IB=-0.01mA -0 -0 -1 -2 -3 -4 -5 -6 10 -0.1 Collector-Emitter Voltage, VCE (V) -1 -10 -100 Collector Current, Ic (mA) Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 2 QW-JTR105 Comchip Technology CO., LTD. General Purpose Transistors Rating and Characteristic Curves (MMBT5401-HF) Fig.4 - Base-Emitter Saturation Voltage Fig.3 - Collector-Emitter Saturation Voltage -1 Ta=100°C Ta=125°C -0.1 Ta=-25°C Ta=-25°C Ta=25°C Base-Emitter Voltage, VBEsat (V) Collector-Emitter Voltage, VCEsat (V) -1 Ta=25°C 0°C 0 Ta=1 5°C 2 Ta=1 IC:IB=10:1 -0.01 -0.1 -1 -10 IC:IB=10:1 -0.1 -0.1 -100 -1 -10 -100 Collector Current, Ic (mA) Collector Current, Ic (mA) Fig.5 - Base-Emitter on Voltage Fig.6 - Cob/Cib — VCB/VEB -100 100 Capacitance, C (pF) Ta=-25°C Ta=25°C °C Ta=10 0 5°C -10 Ta=12 Collector Current, Ic (mA) fT=1MHz Ta=25°C -1 Cib 10 Cob VCE= -5V -0.1 -0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 1 -0.1 Base-Emitter Voltage, VBE (V) -1 -10 -30 Reverse Voltage, VR (V) Fig.7 - Collector Power Derating Curve Collector Power Dissipation, PC (mW) 400 300 200 100 0 0 25 50 75 100 125 150 Ambient Temperature, Ta (°C) Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 3 QW-JTR105 Comchip Technology CO., LTD. General Purpose Transistors Reel Taping Specification P0 d P1 E F W B C A P 12 o 0 D2 D1 D W1 SYMBOL SOT-23 (mm) (inch) SOT-23 A 3.15 ± 0.10 B 2.77 ± 0.10 C d D D1 D2 1.22 ± 0.10 1.50 + 0.10 − 0.00 178.00 ± 1.00 54.60 ± 1.00 13.30 ± 1.00 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 + 0.004 7.008 ± 0.039 2.150 ± 0.039 0.524 ± 0.039 − 0.000 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 8.00 + 0.30 − 0.10 11.10 ± 0.20 (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.315 + 0.012 0.437 ± 0.008 − 0.004 Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 4 QW-JTR105 Comchip Technology CO., LTD. General Purpose Transistors Marking Code Part Number Marking Code MMBT5401-HF 2L 2L 2L Solid dot = Control code Suggested P.C.B. PAD Layout B SOT-23 SIZE (mm) (inch) A 0.90 0.035 B 0.80 0.031 C 0.95 0.037 D 2.00 0.079 E 2.90 0.114 A D C E C Note: 1. The pad layout is for reference purposes only. Standard Packaging REEL PACK Case Type SOT-23 REEL Reel Size (pcs) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 5 QW-JTR105 Comchip Technology CO., LTD.