MMBTA42

High Voltage Transistors COMCHIP www.comchiptech.com M MBTA42, MMBTA43 NPN Silicon Type Features This device is designed for application as a v ideo output to d rive color CRT and other high voltage applications SOT-23 .119 (3.0) .110 (2.8) .020 (0.5) Top View .056 (1.40) .047 (1.20) 3 2 EMITTER .020 (0.5) .020 (0.5) .103 (2.6) .086 (2.2) Dimensions in inches (millimeters) MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current−Continuous Symbol VCEO VCBO VEBO IC MMBTA42 300 300 6.0 500 MMBTA43 200 200 6.0 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD Max 225 1.8 RqJA PD 556 300 Unit mW mW/°C °C/W mW 2.4 RqJA TJ, Tstg 417 −55 to +150 mW/°C °C/W °C MDS0 6 0 5 00 2 A P age 1 .044 (1.10) .035 (0.90) 1 BASE .006 (0.15) .002 (0.05) .037(0.95) .037(0.95) .006 (0.15)max. COLLECTOR 3 1 2 High Voltage Transistors COMCHIP www.comchiptech.com ELECTRICAL CHARACTERISTICS (TA = 25OC unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector −Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base−Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. MMBTA42 MMBTA43 fT Ccb − − 3.0 4.0 50 − MHz pF hFE Both Types Both Types MMBTA42 MMBTA43 VCE(sat) MMBTA42 MMBTA43 VBE(sat) − − − 0.5 0.5 0.9 Vdc 25 40 40 40 − − − − Vdc − MMBTA42 MMBTA43 IEBO MMBTA42 MMBTA43 − − 0.1 0.1 V(BR)CEO MMBTA42 MMBTA43 V(BR)CBO MMBTA42 MMBTA43 V(BR)EBO ICBO − − 0.1 0.1 mAdc 300 200 6.0 − − − Vdc mAdc 300 200 − − Vdc Vdc Symbol Min Max Unit M DS0605002A P age 2 High Voltage Transistors COMCHIP www.comchiptech.com Rating and Characteristic Curves (MMBTA42, MMBTA43) 120 100 hFE , DC CURRENT GAIN TJ = +125°C VCE = 10 Vdc 80 60 40 20 0 25°C −55°C 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 Figure 1. DC Current Gain Ceb @ 1MHz C, CAPACITANCE (pF) BANDWIDTH (MHz) f T, CURRENT−GAIN 100 80 70 60 50 40 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) TJ = 25°C VCE = 20 V f = 20 MHz 50 70 100 10 1.0 Ccb @ 1MHz 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance Figure 3. Current−Gain − Bandwidth 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ −55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ −55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ −55°C, VCE = 10 V Figure 4. “ON” Voltages MDS0605002A P age 3