MUR160

Efficient Fast Rectifier Diode COMCHIP www.comchiptech.com MUR160 Voltage: 600 Volts Current: 1.0 A CASE-DO41 Features Low power loss, high efficiency Low Leakage Low Forward Voltage Drop Hgh Current Capability High Speed Switching High Reliability High Current Surge Glass Passivated Chip Junction 1.0(25.4) MIN .034(0.9) .028(0.7) .205(5.2) .166(4.2) .107(2.7) .080(2.0) 1.0(25.4) MIN Mechanical data Case:GMolded Plastic Epoxy: GUl 94v-0 Rate Flame Retardant Lead: GMil-Std-202e Method 208c Guaranteed Mounting Position: GAny Dimensions In Inches And (Millimeters) Maximum Ratings and Electrical Characterics RATINGS MAXIMUM RECURRENT PEAK REVERSE VOLTAGE MAXIMUM RMS VOLTAGE MAXIMUM DC BLOCKING VOLTAGE MAXIMUM AVERAGE FORWARD RECTIFIED CURRENT .375'' (9.5mm) LEAD LENGTH AT TA=55°C PEAK FORWARD SURGE CURRENT, 8.3ms SINGLE HALF SINE-WAVE SUPERIMPOSED ON RATED LOAD TYPICAL JUNCTION CAPACITANCE (NOTE 1) TYPICAL THERMAL RESISTANCE (NOTE 2) STORAGE TEMPERATURE RANGE OPERATING TEMPERATU RE RANGE SYMBOL VRRM VRMS VDC IO IFSM CJ Rqja TSTG TOP MUR160 600 420 600 1 35 20 15 - 55 TO + 150 - 55 TO + 150 UNITS V V V A A PF °C/W °C °C ELECTRICAL CHARACTERISTICS (AT TA =25°C UNLESS OTHERWISE NOT ED) CHARACTERISTICS MAXIMUM FORW ARD VOLTAGE AT I O DC MAXIMUM REVERSE CURRENT AT 25°C MAXIMUM REVERSE CURRENT AT 100°C MAXIMUM REVERSE RECOVERY TIME (NOTE 3) NOTE: 1. MEASURED AT 1 MHZ AND APPLIED REVERSE VOLTAGE 0 F 4.0 VOLTS 2. BOTH LEADS ATTATCHED TO HEAT SINK 20×20×1t(mm) COPPER PLATE AT LEAD LENT H 5mm 3. REVERSE RECOVERY TEST CONDITIONS: IF=0.5A, IR=1.0A, IRR=0.25A SYMBOL VF IR IR TRR MUR160 1.25 5 250 50 UNITS V mA mA nS M DS030300 C1 P age 1 Efficient Fast Rectifier Diode Rating and Characteristic Curves (MUR160) FIG. 1-TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50Ω NONINDUCTIVE 10Ω NONINDUCTIVE Www.comchiptech.com COMCHIP Trr FIG. 2-TYPICAL FORWARD CURRENT DERATING CURVE (-) (+) 25 Vdc (approx) PULSE GENERATOR ( NOTE 2 ) 1Ω NON INDUCTIVE OSCILLOSCOPE ( NOTE 1 ) AVERAGE FORWARD CURRENT (A) D.U.T. +0.5A 1.5 1.0 0.5 P.C.B MOUNTED ON 0.3×0.3”(8.0×8.0mm) COPPER PAD AREAS 0 -0.25A SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD (-) (+) NOTE: 1. RISETIME=7ns MAX. INPUT IMPEDANCE=1 MEGOHM 22PF 2. RISE TIME =10ns MAX. SOURCE IMPEDENCE=50 OHMS -1.0A 1cm 0 0 20 40 60 80 100 120 140 160 180 200 LEAD TEMPERATURE ( C) o SET TIME BASE FOR 10/20 ns/cm FIG. 3-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURENT (uA) FIG. 4-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT (A) 100 10 10 TJ=125oC 1.0 1.0 TJ=80oC 0.1 MUR160 TJ=25oC .1 .01 .01 0 20 40 60 80 100 120 140 .001 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE (V) FIG. 5-MAXIMUN NON-REPETITIVE FORWARD SURGE CURRENT FIG. 6-TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT (A) 200 100 80 60 40 20 0 0 10 NUMBER OF CYCLES AT 60HZ 8.3 ms Single Half Sine Wave (JEDEC Method) JUNCTION CAPACITANCE (pF) 100 40 20 10 6 4 2 TJ=25oC 100 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE (V) MDS030300 C1 Page 2