RB551V-30

SMD Schottky Barrier Diode SMD Diodes Specialist R B551V-30 (RoHS Device) I o = 500 mA V R = 2 0 Volts Features L ow reverse current. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.014 ( 0.35 ) 0.010(0.25) 0.071 ( 1.80 ) 0.063 ( 1.60 ) SOD-323 0.055 ( 1.40 ) 0.047 ( 1.20 ) Mechanical data C ase: SOD-323 Standard package, molded plastic. Terminals: Gold plated, solderable per MILSTD-750D, method 2026. Mounting position: Any. 0.106 ( 2.70 ) 0.098 ( 2.50 ) 0 .039(1.00)Max. 0 .004(0.10)Max. 0.006 ( 0.15 )Max. 0.019 ( 0.475 )REF Dimensions in inches and (millimeter) M aximum Rating ( at T A =25°C unless otherwise noted) Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Storage temperature Junction temperature 8.3ms single half sine-wave superimposed on rate load(JEDEC method) Conditions Symbol Min Typ Max Unit V RRM VR IO I FSM T STG Tj -40 30 20 500 2 +125 +125 V V mA A °C °C Electrical Characteristics ( at T A =25°C unless otherwise noted) Parameter Forward voltage Reverse current I F = 1 00 mA I F = 5 00 mA VR = 20 V Conditions Symbol Min Typ Max Unit VF IR 0.36 0.47 100 V uA REV:B QW-BB026 Page 1 Comchip Technology CO., LTD. SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (RB551V-30) Fig.1 Forward Characteristics 10A 1 00m 125 C O Fig. 2 - Reverse characteristics IF, Forward Current (A) 1A 10m Reverse current ( A ) 100m =1 2 TA 5°C 1m 75 C O °C =7 TA C 5° TA =2 5 1 00u TA =-2 5 °C 10m 25 C O 10u -25 C O 1m fu 100μ 0.0 0.1 0.2 0.3 0.4 0.5 100n 0 5 10 15 20 25 30 35 40 VF, Forward Voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics Capacitance between terminals ( P F) 100.0 1.0 Fig.4 - Current derating curve Average forward current(%) f = 1 MHz Ta = 25 C 10.0 0.5 1.0 0.0 10.0 20.0 30 40 0 0 25 50 75 100 125 150 Reverse voltage (V) Ambient temperature (°C) REV:B QW-BB026 Page 2 Comchip Technology CO., LTD. S MD Schottky Barrier Diode SMD Diodes Specialist Reel Taping Specification P0 P1 d Index hole E T F B P A W C 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ..... .. 10 pitches (min) End Start Direction of Feed SYMBOL A 1.52 ± 0.10 0.060± 0.004 B 2.90 ± 0.10 0.114 ± 0.004 C 1.35 ± 0.10 0.053 ± 0.004 d 1.50 ± 0.10 0.059 ± 0.004 D 178 ± 1 7.008 ± 0.040 D1 54.4 MIN. 2.142 MIN. D2 13.0 ± 0.20 0.512 ± 0.008 SOD-323 (mm) (inch) SYMBOL E 1.75 ± 0.10 0.069 ± 0.004 F 3.50 ± 0.05 0.138 ± 0.002 P 4.00 ± 0.10 0.157 ± 0.004 P0 4.00 ± 0.10 0.157 ± 0.004 P1 2.00 ± 0.05 0.079 ± 0.002 W 8.00 ± 0.30 0.315 ± 0.012 W1 9.5 MAX. 0.374 MAX SOD-323 (mm) (inch) REV:B QW-BB026 Page 3 Comchip Technology CO., LTD. S MD Schottky Barrier Diode SMD Diodes Specialist Marking Code Part Number RB551V-30 Marking Code D D Suggested PAD Layout SOD-323 SIZE (mm) A B C D E 2.33 0.70 0.70 3.03 1.63 (inch) 0.092 0.028 0.028 0.119 B D A E C 0.064 Standard Package Qty per Reel Case Type (Pcs) SOD-323 3000 Reel Size (inch) 7 REV:B QW-BB026 Page 4 Comchip Technology CO., LTD.