SB540E-G

Low VF/ESD Leaded Schottky Barrier Rectifiers SB520E-G thru SB5100E-G "-G" : RoHS Device Voltage Range: 20 to 100 V Current: 5.0 A FEATURES DO-201AD • Low drop down voltage • 5.0A operation at T A =75°C with no thermal runaway • For use in low voltage, high frequency invertors free wheeling and polarity protection • Silicon epitaxial planar chips • Electrostatic discharge (ESD) test under IEC61000-4-2 standard: >15KV (air) & 8KV (contact) • Lead-free part, meet RoHS requirements 1.0(25.4) Min. .210(5.3) .189(4.8) .375(9.5) .287(7.3) MECHANICAL DATA • Case: Molded plastic body DO-201AD • Epoxy: UL94-V0 rated flame retardant • Terminals: Solderable per MIL-STD-750 Method 2026 • Polarity: Color band denotes cathode end • Mounting Position: Any • Weight: 0.04 ounces, 1.12 grams 1.0(25.4) Min. .052(1.3) .048(1.2) Unit :inch(mm) MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified Symbols 520E 540E 545E 550E 560E 580E 5100E Units Maximum Recurrent Peak Reverse Voltage V RRM 20 40 45 50 60 80 100 Volts Maximum RMS Voltage V RMS 14 28 30 35 42 56 70 Volts Maximum DC Blocking Voltage V DC 20 40 45 50 60 80 100 Volts Maximum Average Forward Rectified Current 0.5” (12.7mm) lead length at T A =75°C, See Figure 1 I AV 5.0 Amps Peak Forward Surge Current I FSM 8.3mS single half sine-wave superimp osed on rated load (JEDEC Me thod) T L =110°C Maximum Forward Voltage at 5.0A (Note 1) Maximum DC Reverse Current at Rated DC Blocking Voltage T A = 25°C T A =100 °C VF 150 0.55 125 0.70 Amps 0.85 0.5 IR 50 Volts mA 30 Typical Junction Capacitance (Note 2) CJ 500 pF Typical Thermal Resistance (Note 3) R θJA R θJL 35.0 15.0 °C/W Operating Junction Temperature Range Storage Temperature Range TJ T STG -65 ~ +125 -65 ~ +150 -65 ~ +150 °C °C Note 1. Pulse test: 300µS pu lse wi dth, 1% du ty cy cle 2. Me asured at 1.0MH z an d ap plied reverse vo ltage of 4.0 Volts 3. Therma l resistance from junction to am bient and from junction to lead P.C.B. mo unted 0. 500” (12.7mm ) lead length wi th 2. 5x2.5” (63.5x63.5mm ) co pper pad. MDS0906005A Page 1 Low VF/ESD Leaded Schottky Barrier Rectifiers RATINGS AND CHARACTERISTIC CURVES SB520E-G thru SB5100E-G Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) Average Forward Current (A) Fig.1 - Forward Current Derating Curve 6.0 5.0 4.0 SB520E - SB545E 3.0 SB550E - SB5100E 2.0 single phase half wave 60Hz resistive or inductive load 3.75”(9.5mm) lead length 1.0 0 25 50 75 100 125 150 175 200 T L =110°C 8.3mS single half sine-wave (JEDEC Method) 150 100 SB520E - SB545E 50 SB550E - SB5100E 0 1 10 Lead Temperature ( °C) Fig. 3 - Typical Instantaneour Forward Characteristics Instantaneous Reverse Current (mA) Fig. 4A - Typical Reverse Characteristics Instantaneous Forward Current (A) 50 10 SB580E - SB5100E 1 SB550E - SB560E 0.1 SB520E - SB545E 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 SB520E - SB545E 10 T J =125°C 1.0 T J =100°C 0.1 0.01 T J =25°C 0.001 0 Instantaneous Forward Voltage (Volts) 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage ( %) Fig. 5 - Typical Junction Capacitance Fig. 4B - Typeical Reverse Characteristic 5 Instantaneous Reverse Current (uA) 10,000 Junction Capacitance (pF) 100 Number of Cycles at 60 Hz 1,000 T J =25°C f=1.0MHz Vsig=50mVp-p 100 0.1 1.0 10 Reverse Voltage (Volts) MDS0906005A 100 10 SB550E - SB5100E T J =150°C 4 10 T J =125°C 3 10 2 T J =75°C 10 1 10 T J =25°C 1 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage ( %) Page 2