TVP06B111A-G

SMD Transient Voltage Suppressor TVP06B6V8-G Thru. TVP06B601-G Breakdown Voltage: 6.8 to 600 Volts Power Dissipation: 600 Watts RoHS Device Features SMB/DO-214AA - Glass passivated chip. - 600W peak pulse power capability with a 10/1000µs waveform, repetitive rate (duty cycle):0.01% - Low leakage. 0.155(3.94) 0.130(3.30) 0.087(2.20) 0.077(1.96) - Uni and Bidirectional unit. - Excellent clamping capability. 0.191(4.85) 0.171(4.35) - Very fast response time. - UL recognized file # E349157 - Range: TVP06B6V8(C)A thru. TVP06B510(C)A R Mechanical Data 0.012(0.30) 0.006(0.15) 0.096(2.44) 0.084(2.13) -Case: Molded plastic, JEDEC SMB/DO-214AA 0.008(0.20) 0.001(0.02) 0.060(1.52) 0.030(0.75) -Epoxy: UL 94V-0 rate flame retardant. -Lead: solderable per MIL-STD-750, method 2026 -Polarity: Color band denotes cathode end except Bipolar. 0.216(5.50) 0.201(5.10) Dimensions in inches and (millimeter) -Weight: 0.108 gram (approx.) Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol Value Units Peak power dissipation with a 10/1000μs waveform (Note 1 ) PPP 600 W Peak pulse current with a 10/1000μs waveform (Note 1) IPP See Next Table A Power dissipation on infinite heatsink at TL=75°C PD 5.0 W Peak forward surge current, 8.3ms single half sine-wave uni-directional only (Note 2) IFSM 100 A Maximum instantaneous forward voltage at 25.0A for uni-directional only (Note 3) VF 3.5/5.0 V Operation junction temperature TJ -55 to +150 °C TSTG -55 to +150 °C Parameter Storage temperature range Note: 1. Non-repetitive current pulse, per Fig.5 and derated above TA=25°C per Fig.1 2. Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulse per minute maximum. 3. VF