BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC IB PTOT TJ TStg
Collector-Emitter Voltage
Ratings
BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 181T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2
Value
60 90 140 60 100 200 10
6 3
Unit
V V V A A Watts
Collector-Base Voltage
Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature @ TC = 25°
87.5 200 -65 to +200
°C
COMSET SEMICONDUCTORS
1/4
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case BDY23, 180T2 BDY24, 181T2 BDY25, 182T2
Value
2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter Breakdown Voltage (*)
Test Condition(s) BDY23, 180T2
Min Typ Mx Unit
60 90 140 60 100 200 -
1.0 mA V V
VCEO(BR)
IC=50 mA, IB=0
BDY24, 181T2 BDY25, 182T2
V(BR)CBO
Collector-Base Breakdown Voltage (*) Collector-Emitter Cutoff Current
BDY23, 180T2
IC=3 mA VCE=60 V VCE=90 V VCE=140 V
BDY24, 181T2 BDY25, 182T2 BDY23 BDY24 BDY25 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2
ICEO
-
IEBO
Emitter-Base Cutoff Current VEB=10 V
VCE=60 V VBE=0 V
1.0
mA
-
-
0.5 1.0 1.0 1 0.6 0.6 mA
ICES
Collector-Emitter Cutoff Current
VCE=100 V VBE=0 V VCE=180 V VBE=0 V
VCE(SAT)
Collector-Emitter saturation Voltage (*)
IC=2.0 A, IB=0.25 A
V
COMSET SEMICONDUCTORS
2/4
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2
Symbol
VBE(SAT)
Ratings
Base-Emitter Voltage (*)
Test Condition(s) BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 A B C A B C BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2
Min Typ Mx Unit
-
IC=2.0 A, IB=0.25 A
55 65 90 20 45 82 -
2.0 1.2 1.2 45 90 100 -
V
VCE=4 V, IC=1 A
h21E
Static Forward Current transfer ratio (*)
VCE=4 V, IC=2 A
15 30 75 10
-
fT
Transition Frequency
VCE=15 V, IC=0.5 A, f=10 MHz
MHz
t d + tr
Turn-on time
IC=5 A, IB=1 A IC=5 A, IB1=1 A, IB2=-0.5 A
-
0.3
0.5
µs
t s + tf
Turn-off time
-
1.5
2.0
µs
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
COMSET SEMICONDUCTORS
3/4
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2
MECHANICAL DATA CASE TO-3
DIMENSIONS
A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm inches 25,45 1 38,8 1,52 30,09 1,184 17,11 0,67 9,78 0,38 11,09 0,43 8,33 0,32 1,62 0,06 19,43 0,76 1 0,04 4,08 0,16 Base Emitter Collector
COMSET SEMICONDUCTORS
4/4