2N1599

2N1595 thru 2N1599 SILICON THYRISTOR Industrial-type, low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit applications. Current handling capability of 1.6 amperes at junction temperetures to 125°C MAXIMUM RATINGS (*) TJ=125°C unless otherwise noted Symbol VRSM(REP) IT(RMS) ITSM PGM PG(AV) IGM VGFM VGRM TJ TSTG Ratings Peak reverse blocking voltage * Forward Current RMS (all conduction angles) Peak Surge Current (One Cycle, 60Hz, TJ=-65 to +125°C) Peak Gate Power – Forward Average Gate Power - Forward Peak Gate Current – Forward Peak Gate Voltage - Forward Peak Gate Voltage - Reverse Operating Range Junction Temperature 2N1595 2N1596 2N1597 2N1598 2N1599 50 100 200 1.6 15 0.1 0.01 0.1 300 400 V Amp Amp W W Amp 10 10 -65 to +125 V V °C Storage Temperature Range -65 to +150 ELECTRICAL CHARACTERISTICS TJ=25°C unless otherwise noted, RGK=1000Ω Symbol VDRM IRRM Ratings Peak Forward Blocking Min : Voltage * Peak Reverse Blocking Current (Rated VDRM, TJ =125°C) 2N1595 2N1596 2N1597 2N1598 2N1599 50 100 200 Max : 1.0 300 400 V mA COMSET SEMICONDUCTORS 1/2 2N1595 thru 2N1599 Symbol IDRM IGT Ratings Peak Forward Blocking Current (Rated VDRM with gate open , TJ =125°C) Gate Trigger Current (2) Anode Voltage=7.0 Vdc, RL=12Ω Gate Trigger Voltage Anode Voltage=7.0 Vdc, RL=12Ω VDRM = Rated, RL=100Ω, TJ=125°C 2N1595 2N1596 2N1597 2N1598 2N1599 Max :1.0 Typ : 2.0 Max : 10 Typ : 0.7 Max : 3.0 Min : 0.2 Typ : 5.0 Typ : 1.1 Max : 2.0 Typ : 0.8 mA mA VGT V mA V µs µs IH VTM tgt Holding Current Anode Voltage=7.0 Vdc, gate open Forward On Voltage IT=1 Adc Turn-On Time (td+tr) IGT=10 mA, IT=1 A Turn-Off Time IT=1 A, IR =1 A, dv/dt=20 V/µs, TJ=125°C VDRM = Rated Voltage tq Typ : 10 * VDRM or VRSM can be applied for all types on a continuous dc basis without incurring damage. MECHANICAL DATA CASE TO-39 DIMENSIONS A B C D E F G H L Pin 1 : Pin 2 : Pin 3 : mm inches 6,25 0,24 13,59 0,53 9,24 0,36 8,24 0,32 0,78 0,03 1,05 0,041 0,42 0,165 45° 5,1 0,2 Cathode Gate Anode Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 2/2