2N1613

NPN 2N1613 – 2N1711 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCER VEBO IC ICM PD TJ TStg Ratings Collector-Base Voltage Collector-Emitter Voltage (RBE = 10Ω) Emitter-Base Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature range @ Tcase= 25° @ Tcase= 100° @ Tamb= 25° Value 75 50 7 0.5 1 3 1.7 0.8 200 -65 to +200 Unit V V V A A Watts Watts Watts °C °C THERMAL CHARACTERISTICS Symbol RthJ-c RthJ-amb Ratings Thermal Resistance, Junction-case Thermal Resistance, Junction-ambient Value 58 219 Unit °C/ W °C/ W COMSET SEMICONDUCTORS 1/3 NPN 2N1613 – 2N1711 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO IEB0 VCBO Ratings Collector Cutoff Current Test Condition(s) Min 75 50 7 20 35 40 20 20 20 35 75 100 40 35 30 70 - Typ 35 130 75 65 2.2 4.4 3.6x10-4 7.3x10-4 12.5 23.8 Mx 10 10 10 5 1.5 1.3 120 300 150 Unit nA µA nA V V V V V VCE=60 V, IE=0 VCE=60 V, IE=0, Tamb = 150°C 2N1613 VEB=5 V Emitter Cutoff Current 2N1711 VEB=5 V IC=0.1 mA Collector Base Breakdown Voltage IC=10 mA , RBE=10 Ω IE=100 µA , IC=0 IC=150 mA , IB=15 mA IC=150 mA , IB=15 mA IC=0.01 mA , VCE=10 V IC=0.1 mA , VCE=10 V IC=10 mA , VCE=10 V IC=150 mA , VCE=10 V IC=500 mA , VCE=10 V IC=10 mA , VCE=10 V, Tamb=55°C IC=0.01 mA , VCE=10 V IC=0.1 mA , VCE=10 V IC=10 mA , VCE=10 V IC=150 mA , VCE=10 V IC=500 mA , VCE=10 V IC=10 mA , VCE=10 V, Tamb=55°C IC=1 mA , VCE=10 V, f = 1 kHz IC=1 mA , VCE=10 V, f = 1 kHz IC=1 mA , VCE=5 V, f = 1 kHz IC=1 mA , VCE =5 V, f = 1 kHz IC=1 mA , VCE =5 V, f = 1 kHz IC=1 mA , VCE =5 V, f = 1 kHz IC=1 mA , VCE =5 V, f = 1 kHz IC=1 mA , VCE =5 V, f = 1 kHz Collector Emitter Breakdown VCER(*) Voltage Emitter Base Breakdown Voltage VEBO VCE(SAT)(*) Collector-Emitter saturation Voltage VBE(SAT)(*) Base-Emitter saturation Voltage 2N1613 hFE(*) DC Current Gain - 2N1711 2N1613 hfe Small Signal Current Gain 2N1711 2N1613 300 µS kΩ hje Input Impedance 2N1711 2N1613 hre Reverse VoltageRatio 2N1711 2N1613 hoe Output Admitance 2N1711 COMSET SEMICONDUCTORS 2/3 NPN 2N1613 – 2N1711 Symbol fT CCBO CEBO NF Ratings 2N1613 2N1711 Collector-Base Capacitance Emitter-Base Capacitance Transition Frequency Noise Figure Test Condition(s) IC=50 mA , VCE=10 V, f= 20MHz IC=50 mA , VCE=10 V, f= 20MHz IE= 0 ,VCB= 10 V , f = 1MHz IC= 0 ,VEB= 0.5V , f = 1MHz IC= 0.3 mA , VCE=10 V 2N1613 f = 1 kHz , R9= 510 Ω IC= 0.3 mA , VCE=10 V 2N1711 f = 1 kHz , R9= 510 Ω Min Typ 60 70 - Mx 25 80 12 Unit MHz pF pF dB 8 (*) Pulse conditions : tp < 300 µs, δ =1%. MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min A B D E F G H I L 12.7 5.08 45° typ max 0.49 6.6 8.5 9.4 1.2 0.9 - Pin 1 : Pin 2 : Case : Emitter Base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3