2N1671A

2N1671 – 2N1671A – 2N1671B PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS They are designed for medium-power switching, oscillator and pulse timing circuits. Package outline is similar to TO-5 except • • • • Highly Stable Negative Resistance and Firing Voltage Low Firing Current High Pulse Curent Capabilities Simplified Circuit Design ABSOLUTE MAXIMUM RATINGS Symbol VB1E VB2E VB1B2 IFRMS IEM PTOT TJ TSTG Ratings Base 1 – Emitter Reverse Voltage 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B Value 30 Unit V Base 2 – Emitter Reverse Voltage 30 V Interbase Voltage 35 V RMS Emitter Current 50 mA Emitter Peak Current 2 A Total Power Dissipation 450 mW Maximum Junction 150 °C -55 to +150 Storage Temperature Range This data guaranteed in addition to JEDEC registered data COMSET SEMICONDUCTORS 1/2 2N1671 – 2N1671A – 2N1671B ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IEB2O VEB1(sat) RBBO Ratings Emitter Reverse Current Test Condition(s) VB2E=30 V, IB1= 0 Min Typ Mx Unit 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 4.7 4.7 4.7 0.47 0.47 0.47 -12 -12 -0.2 5 5 5 9.1 9.1 9.1 0.62 0.62 0.62 8 8 8 25 25 6 µA Emitter saturation Voltage VB2B1 = 10 V, IE= 50 mA V Interbase Resistance VB2B1 = 3 V, , IE= 0 K η IV IP Intrinsic stand-off ratio VB2B1= 10 V - Valley Current VB2B1= 10 V, RB2= 100 mA Peak Current VB2B1= 25 V µA MECHANICAL DATA CASE TO-5 Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 2/2