2N2905

PNP 2N2905 – 2N2905A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2905 and 2N2905A are PNP transistors mounted in TO-39 metal case . They are intended for high speed switching and general purpose applications. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD PD TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range @ Tamb = 25° @ Tcase= 25° Ratings 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 Value -60 -40 -60 -60 -5 -5 -600 0.6 Unit V V V mA Watts 3 200 -65 to +200 °C °C THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient in free air Thermal Resistance, Junction to case 2N2905A 2N2905 2N2905A 2N2905 Value 58.3 292 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS COMSET SEMICONDUCTORS 1/3 PNP 2N2905 – 2N2905A TC=25°C unless otherwise noted Symbol ICBO ICEX VCEO VCBO VEBO Ratings Collector Cutoff Current Test Condition(s) VCB=-50 V, IE=0 VCB=-50 V, IE=0, Tj=150°C Min Typ Mx Unit -10 -20 -10 -20 -50 300 120 -0.4 -1.6 V -1.3 -2.6 nA µA nA V V V Collector Cutoff Current VCE=-30 V, VBE=0.5V Collector Emitter Breakdown IC=-10 mA, IB=0 Voltage Collector Base Breakdown IC=-10 µA, IE=0 Voltage Emitter Base Breakdown IE=-10 µA, IC=0 Voltage IC=-0.1 mA, VCE=-10 V IC=-1 mA, VCE=-10 V hFE DC Current Gain IC=-10 mA, VCE=-10 V IC=-150 mA, VCE=-10 V (1) IC=-500 mA, VCE=-10 V (1) IC=-150 mA, IB=-15 mA IC=-500 mA, IB=-50 mA IC=-150 mA, IB=-15 mA IC=-500 mA, IB=-50 mA VCE(SAT) Collector-Emitter saturation Voltage (1) VBE(SAT) Base-Emitter saturation Voltage (1) 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A -60 -40 2N2905 2N2905A -60 2N2905 2N2905A -5 2N2905 2N2905A 75 35 2N2905 2N2905A 100 50 2N2905 2N2905A 100 75 2N2905 2N2905A 100 40 2N2905 2N2905A 50 30 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 - Symbol fT Ratings Transition frequency Test Condition(s) IC =-50 mA, VCE =-20 V f = 100MHz Min Typ Mx Unit MHz 2N2905A 200 2N2905 Symbol td tr CCBO CEBO Ratings Delay time Rise time Collector-Base capacitance Emitter-Base capacitance Test Condition(s) IC=-150 mA ,IB =-15 mA -VCC=-30 V IE= Ie = 0 ,VCB=-10 V f = 100kHz IC= Ic = 0 ,VEB=-2 V f = 100kHz Min Typ Mx Unit 10 40 8 30 ns pF pF 2N2905A 2N2905 2N2905A 2N2905 - (1) Pulse conditions : tp < 300 µs, δ =2% COMSET SEMICONDUCTORS 2/3 PNP 2N2905 – 2N2905A MECHANICAL DATA CASE TO-39 DIMENSIONS A B C D E F G H L mm 6,25 13,59 9,24 8,24 0,78 1,05 0,42 45° 4,1 Pin 1 : Pin 2 : Case : Emitter Base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3