2N2907

NPN 2N2222 – 2N2222A PNP 2N2907 – 2N2907A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2222 and 2N2222A are NPN transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. The 2N2222 is also suitable for d.c. and v.h.f./u.h.f. amplifiers . PNP complements are 2N2907 and 2N2907A . Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD PD TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range @ Tamb = 25° @ Tcase= 25° Ratings 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 Value 40(1) 30 75 60 6 5 800 0.5 1.2 200 -65 to +200 Unit V V V mA Watts Watts °C °C (1) Applicable up to IC = 500mA THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient in free air Thermal Resistance, Junction to case 2N2222A 2N2222 2N2222A 2N2222 Value 350 146 Unit K/W K/W COMSET SEMICONDUCTORS 1/3 NPN 2N2222 – 2N2222A PNP 2N2907 – 2N2907A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICBO IEBO ICEX VCEO VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector Cutoff Current Test Condition(s) VCB=60 V, IE=0V VCB=50 V, IE=0V VCB=60 V, IE=0V, Tj=150°C VCB=50 V, IE=0V, Tj=150°C VBE=3.0 V, IC=0 VCE=60 V, -VBE=3V Min Typ Mx Unit 10 10 10 10 0.3 0.4 1 1.6 1.2 1.3 2 2.6 nA µA nA nA V V V Collector Emitter Breakdown IC=10 mA, IB=0 Voltage Collector Base Breakdown IC=10 µA, IE=0 Voltage Emitter Base Breakdown IE=10 µA, IC=0 Voltage IC=0.1 mA, VCE=10 V IC=1 mA, VCE=10 V IC=10 mA, VCE=10 V hFE DC Current Gain IC=10 mA, VCE=10 V Tamb = -55° IC=150 mA, VCE=1 V (1) IC=150 mA, VCE=10 V (1) IC=500 mA, VCE=10 V (1) IC=150 mA, IB=15 mA IC=500 mA, IB=50 mA IC=150 mA, IB=15 mA IC=500 mA, IB=50 mA VCE(SAT) Collector-Emitter saturation Voltage (1) VBE(SAT) Base-Emitter saturation Voltage (1) 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 40 30 2N2222 2N2222A 75 60 2N2222 6 2N2222A 5 2N2222 2N2222A 35 2N2222 2N2222A 50 2N2222 2N2222A 75 2N2222 2N2222A 35 2N2222 2N2222A 50 2N2222 2N2222A 100 2N2222 2N2222A 40 30 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 V Symbol fT hfe Ratings Transition frequency Small signal current gain Test Condition(s) IC=20 mA, VCE=20 V f= 100MHz IC=1 A, VCE=2.0 V Min Typ Mx Unit 3/3 MHz - 2N2222A 250 300 2N2222 3 2N2222A 2.5 2N2222 COMSET SEMICONDUCTORS NPN 2N2222 – 2N2222A PNP 2N2907 – 2N2907A Symbol td tr CC CE rb,CC Ratings Delay time Rise time Collector capacitance Emitter capacitance Feedback time constant Test Condition(s) IC=150 mA ,IB =15 mA -VBE=0.5 V IE= Ie = 0 ,VCB=10 V f = 100kHz IC= Ic = 0 ,VEB=0.5 V f = 100kHz IC=20 mA, VCE=20 V f= 31.8MHz Min Typ Mx Unit 10 25 8 25 150 ns pF pF ps 2N2222A 2N2222A 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 (1) Pulse conditions : tp < 300 µs, δ =2% MECHANICAL DATA CASE TO-18 DIMENSIONS mm A B D E F G H I L Pin 1 : Pin 2 : Pin 3 : 12,7 0,49 5,3 4,9 5,8 2,54 1,2 1,16 45° inches 0,5 0,019 0,208 0,193 0,228 0,1 0,047 0,045 45° Emitter Base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3