2N3055

2N3055 POWER LINEAR AND SWITCHING APPLICATIONS The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VCER VEBO Collector to Base Voltage #Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous Base Current – Continuous Total Device Dissipation Junction Temperature Storage Temperature @ TC = 25° Derate above 25° Ratings Value 100 60 70 7 15 7 115 0.657 200 -65 to +200 Unit V V V V Adc Adc Watts W/°C °C °C IC IB PD TJ TS THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case Value 1.52 Unit °C/W COMSET SEMICONDUCTORS 1/2 2N3055 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) BVCER ICEO ICEX IEBO hFE VCE(SAT) VBE hfe fα e Ratings Test Condition(s) Min Typ Mx Unit 60 70 0.7 5.0 30 20 5.0 15 10 1.95 1.8 5.0 70 1.1 8.0 120 mAdc mAdc Vdc Vdc mAdc Collector-Emitter Sustaining IC=200 mAdc, IB=0 Voltage (1) Collector-Emitter IC=200 mAdc, RBE=100Ω Breakdown Voltage (1) Collector-Emitter Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter saturation Voltage Base-Emitter Voltage Small Signal Current Gain CVE=30 Vdc, IB=0 VCE=100 Vdc, VEB(off)=1.5 Vdc VCE=100 Vdc, VEB(off)=1.5 Vdc, TC=150°C VBE=7.0 Vdc, IC=0 IC=4.0 Adc, VCE=4.0 Vdc IC=10 Adc, VCE=4.0 Vdc IC=4.0 Adc, IB=0.4Adc IC=10 Adc, IB=3.3Adc IC=4.0 Adc, VCE=4.0 Vdc VCE=4.0 Vdc, IC=1.0 Adc, f=1.0 kHz Vdc Vdc kHz A Small Signal Current Gain VCE=4.0 Vdc, IC+=1.0 Adc, f=1.0 kHz Cutoff Frequency Second Breakdown t=1 S (non repetitive), VCE=60 Vdc Is/b Collector Current In accordance with JEDEC Registration Data (1) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% MECHANICAL CHARACTERISTICS CASE-TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 2/2