2N3227

NPN 2N3227 SILICON ANNULAR TRANSISTORS The 2N3227 are silicon NPN silicon annular transistors for low-current, high-speed switching applications. They are mounted in Jedec TO-18 metal. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO VCES IC (peak) PD PD TJ TStg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Emitter Voltage Ratings Value 40 20 6 40 500 0.36 2.06 1.2 6.85 +200 -65 to +200 Unit V V V V mA Watts mW/°C Watts mW/°C °C Collector Current TOTAL Device Dissipation Ambient Temperature Derating Factore Above TOTAL Device Dissipation Case Temperature . Derating Factore Above Junction Temperature Storage Temperature range @ TC 25° @ TC 25° = = NPN 2N3227 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICEX IBL BVCBO BVEBO BVCEO BVCES Ratings Collector cut-off current Collector cut-off curren Base cut-off curren Collector-Base Breakdown voltage Emitter-Base Breakdown voltage Collector-Emitter Breakdown voltage (1) Collector-Emitter voltage Test Condition(s) IE = 0 ; VCB = 20V IE = 0 ; VCB = 20V ; TA = 150°C VCE = 20V ; VEB(off) = 3V VCE = 20V ; VEB(off) = 3V IC =10 µA ; IB = 0 IE =10 µA ; IC = 0 IC = 10 mA IC =10 µA ; IB = 0 Min Typ 40 6 20 40 - Mx Unit 0.2 50 0.2 0.5 - µA V V V V COMSET SEMICONDUCTORS 1/2 Symbol Ratings Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) DC Current Gain Small Signal Current Gain Storage time Turn-off time Turn-on time Output Capacitance Input Capacitance Test Condition(s) Min Typ - Mx Unit 0.25 0.45 0.85 1.4 300 13 18 12 4.0 4.0 pF pF VCE(SAT) VBE(SAT) hFE hfe tS Toff ton Cob Cib IC=10 mA, IB=1.0 mA IC=100 m A, IB=10 mA IC=10 mA, IB=1.0 mA IC=100 m A, IB=10 mA VCE=1.0 V, IC=10 mA 100 VCE=1.0 V, IC=10 mA TA =-55°c 40 30 VCE=1.0 V, IC=100 mA 5 VCE=10 V, IC=10 mA , f=100MHz IC = IB1 = IB2 =10 mA IC=10 A;IB1= 3 mA;IB2 =1.5 mA;VCc=3.0 V IC=10 A;IB1= 3 mA; VCc=3.0 V ; VEB(off) = 1.5 V VCB=5 V ; IE=0 , f=140kHz VBE=1 V ; IC=0 , f=140kHz - V V - ns NPN 2N3227 MECHANICAL DATA CASE TO-18 Pin 1 : Pin 2 : Case : Emitter Base Collector COMSET SEMICONDUCTORS 2/2