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2N3713

2N3713

  • 厂商:

    COMSET

  • 封装:

  • 描述:

    2N3713 - EPITAXIAL-BASE NPN - PNP - Comset Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
2N3713 数据手册
2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings 2N3789 2N3791 2N3713 2N3715 2N3790 2N3792 2N3714 2N3716 2N3789 2N3791 2N3713 2N3715 2N3790 2N3792 2N3714 2N3716 2N3789 2N3790 2N3791 2N3792 2N3713 2N3714 2N3715 2N3716 Value 80 Unit VCBO Collector-BaseVoltage IE = 0 V 100 60 V 80 VCEO Collector-Emitter Voltage IB = 0 VEBO Emitter-Base Voltage IC = 0 7.0 V COMSET SEMICONDUCTORS 1/5 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP Symbol Ratings 2N3789 2N3790 2N3791 2N3792 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N3713 2N3714 2N3715 2N3716 Value Unit IC Collector Current 10 A IB Base Current 4.0 A PD Total Device Dissipation @ TC = 25° 150 Watts W/°C TJ Junction Temperature -65 to +200 °C TS Storage Temperature THERMAL CHARACTERISTICS Symbol Ratings 2N3789 2N3790 2N3791 2N3792 2N3713 2N3714 2N3715 2N3716 Value Unit RthJC Thermal Resistance, Junction to Case (Max) 1.17 °C/W COMSET SEMICONDUCTORS 2/5 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) 2N3789 2N3791 2N3713 2N3715 2N3790 2N3792 2N3714 2N3716 2N3789 2N3791 2N3713 2N3715 2N3790 2N3792 2N3714 2N3716 2N3789 2N3791 2N3713 2N3715 2N3790 2N3792 2N3714 2N3716 2N3789 2N3791 2N3713 2N3715 2N3790 2N3792 2N3714 2N3716 2N3789 2N3790 2N3791 2N3792 2N3713 2N3714 2N3715 2N3716 Min Typ Mx Unit 60 V 80 - VCEO(SUS) Collector-Emitter Sustaining IC=200 mA, IB=0 (1) Voltage VCE=30 V, IB=0 - - 0.7 mA ICEO Collector-Emitter Current VCE=40 V, IB=0 - - 0.7 VCE=80 V, VEB=-1.5 V - - 1.0 VCE=100 V, VEB=-1.5 V, TC = 150°C - - 1.0 mA ICEV Collector Cutoff Current VCE=60 V, VEB=-1.5 V, TC = 150°C - - 10 VCE=80 V, VEB(off)=-1.5 V, TC = 150°C - - 10 IEBO Emitter Cutoff Current VBE=7.0 V, IC=0 - - 5.0 mA COMSET SEMICONDUCTORS 3/5 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP Symbol Ratings Test Condition(s) 2N3713 2N3714 2N3789 2N3790 2N3715 2N3716 2N3791 2N3792 2N3713 2N3714 2N3789 2N3790 2N3715 2N3716 2N3791 2N3792 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N3713 2N3714 2N3791 2N3792 2N3715 2N3716 2N3789 2N3790 2N3713 2N3714 2N3789 2N3790 2N3715 2N3716 2N3791 2N3792 2N3713 2N3714 2N3715 2N3716 2N3713 2N3714 2N3715 2N3716 Min Typ Mx Unit 25 50 50 15 90 150 180 30 - IC=1.0 A, VCE=2.0 V hFE DC Current Gain (1) (2) IC=3.0 A, VCE=2.0 V IC=10 A, VCE=4.0 V 5.0 - - - - 1.0 V 0.8 1.0 2.0 V VCE(SAT) Collector-Emitter saturation Voltage (1) (2) IC=5.0 A, IB=0.5 A IC=4.0 Adc, IB=0.5 Adc VBE(SAT) Base-Emitter Saturation Voltage (1) (2) IC=5.0 Adc, IB=0.5 Adc - - 1.5 - - 2.0 1.8 4.0 V IC=5.0 Adc, VCE=2.0 Vdc VBE Base-Emitter Voltage (1) (2) IC=10 A, VCE=4.0 V COMSET SEMICONDUCTORS 4/5 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP Symbol hfe Ratings Small Signal Current Gain Test Condition(s) 2N3713 2N3714 VCE=10 V, IC=0.5 A, f=1.0 kHz 2N3715 2N3716 2N3713 2N3714 VCE=10 V, IC=0.5 A, f=1.0 MHz 2N3715 2N3716 Min Typ Mx Unit 25 250 - |hfe| Small Signal 4 - 4 - (1) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (2) These parameters are measured with voltage sensing contacts separate from the current carrying contacts For PNP types current and voltage values are negative. MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 5/5
2N3713
1. 物料型号: - NPN型:2N3713、2N3714、2N3715、2N3716 - PNP型:2N3789、2N3790、2N3791、2N3792

2. 器件简介: - 这些是硅外延基NPN功率晶体管,封装在Jedec TO-3金属封装中,适用于功率线性和开关应用。

3. 引脚分配: - Pin 1: Base(基极) - Pin 2: Emitter(发射极) - Case: Collector(集电极)

4. 参数特性: - 绝对最大额定值: - VcBO(集电极-基极电压):2N3789、2N3791、2N3713、2N3715为80V,2N3790、2N3792、2N3714、2N3716为100V - VCEO(集电极-发射极电压):2N3789为60V,其他型号为80V - VEBO(基极-发射极电压):所有型号均为7.0V - 电气特性(TC=25°C除非另有说明): - VCEO(SUS)(集电极-发射极维持电压):2N3789、2N3791、2N3713、2N3715为60V,2N3790、2N3792、2N3714、2N3716为80V - ICEO(集电极-发射极电流):所有型号均为0.7mA - IcEV(集电极截止电流):2N3789、2N3791、2N3713、2N3715为1.0mA,2N3790、2N3792、2N3714、2N3716为10mA - IEBO(发射极截止电流):所有型号均为5.0mA - hFE(直流电流增益):不同型号的最小值和典型值有所不同,范围在15到180之间

5. 功能详解: - 这些晶体管设计用于功率线性和开关应用,具有较高的集电极电流和功率耗散能力。

6. 应用信息: - 适用于需要较高功率处理和开关能力的电路,如放大器、开关电源等。

7. 封装信息: - 封装类型为TO-3金属封装,具体尺寸和引脚排列已在文档中详细说明。
2N3713 价格&库存

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