2N4032

PNP 2N4030 – 2N4031 – 2N4032 – 2N4033 GENERAL PURPOSE AMPLIFIERS AND SWITCHES They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package. They are intended for large signal, low noise industrial applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol -VCBO Collector-Base Voltage IE = 0 Ratings 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 @ Tcase= < 25° @ Tamb= < 25° Value 60 80 60 80 60 80 60 80 5 Unit V -VCEO Collector-Emitter Voltage IB = 0 V -VEBO Emitter-Base Voltage IC = 0 V -I C Ptot TJ TStg Collector Current 1 4 0.8 200 -65 to +200 A Watts °C °C Junction Temperature Storage Temperature range THERMAL CHARACTERISTICS Symbol RthJ-c RthJ-amb Ratings Thermal Resistance, Junction-case Thermal Resistance, Junction-ambient Value 44 218 Unit K/ W K/ W COMSET SEMICONDUCTORS 1/3 PNP 2N4030 – 2N4031 – 2N4032 – 2N4033 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE = 0 ;VCB = 50 V IE = 0 ;VCB = 60 V IE = 0 ; V VCB =50 V Tamb = 150°c VCB =60 V IE = 0 ;VCB = 50 V IE = 0 ;VCB = 60 V IE = 0 ; V VCB =50 V Tamb = 150°c VCB =60 V Min 60 80 60 80 60 80 60 80 5 - Typ Mx Unit 50 50 50 50 0.15 0.5 1 0.9 1.1 1.2 120 300 2/3 V nA µA nA µA -ICBO Collector – Cutoff Current -VCB0 Collector – Base Breakdown -IC = 10 µA IE = 0 Voltage -VCE0 (*) Collector – Emitter Breakdown Voltage -IC = 10 mA IB = 0 -VEB0 Emitter – Base Breakdown Voltage -IE = 10 µA IC = 0 -IC = 150 mA , -IB = 15 mA -IC = 500 mA , -IB = 50 mA -IC = 1 A, -IB = 100 mA -IC = 150 mA , -IB = 15 mA -IC = 500 mA , -IB = 50 mA -IC = 1 A, -IB = 100 mA 2N4030 2N4031 2N4030 2N4031 2N4032 2N4033 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 V V V -VCE(SAT) (*) Collector-Emitter Saturation Voltage 2N4030 2N4032 - -VBE (*) Base-Emitter Saturation Voltage -IC = 100 µA , -VCE = 5 V -IC = 100 mA , -VCE = 5V hFE (*) DC Current Gain -IC = 500 mA , -VCE = 5V -IC = 1 A , -VCE = 5 V -IC = 100 mA , -VCE = 5V Tamb = -55°c COMSET SEMICONDUCTORS 2N4030 2N4032 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 30 75 40 100 25 70 15 10 40 25 15 40 PNP 2N4030 – 2N4031 – 2N4032 – 2N4033 Symbol fT CEBO CCBO tS tf ton Ratings Transition Frequency Test Condition(s) -IC = 50 mA , -VCE = 10 V f = 100 MHZ IC = 0 ; -VEB = 0.5 V f = 1 MHZ IE = 0 ; -VCB = 10V f = 1 MHZ -IC =500 Ma ; -VCC = 30V -IB1 = -IB1 = 50 mA -IC =500 Ma ; -VCC = 30V -IB1 = -IB1 = 50 mA -IC =500 Ma ; -VCC = 30V -IB1 = -IB1 = 50 mA Min 2N4030 2N4031 2N4032 2N4033 100 150 - Typ Mix Unit 400 MHZ 500 110 20 350 50 100 pF pF ns ns ns Emitter – base Capacitance Collector – base Capacitance Storage times Fall times Turn-on times (*) Pulsed : pulse duration = 300µs, duty cycle = 1% MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min A B D E F G H I L 12.7 5.08 45° typ max 0.49 6.6 8.5 9.4 1.2 0.9 - Pin 1 : Pin 2 : Case : Emitter Base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3