2N4901

PNP SILICON TRANSISTORS, EPITAXIAL BASE LF Large signal power amplification Switching medium current ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector to Base Voltage Ratings 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 tp=5 ms 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 Value -40 -60 -80 -40 -60 -80 -40 -60 -80 -5.0 -40 -60 -80 -5 Unit V VCEO #Collector-Emitter Voltage V VCER VEBO Collector-Emitter Voltage V Emitter-Base Voltage V V VCEX Collector-Base Voltage VBE=1.5 V IC Collector Current – Continuous A ICM Collector Current – Peak -10 A IB Base Current – Continuous -1 A PTOT TJ TSTG Power Dissipation 87.5 W Junction Temperature 200 -65 to +200 °C °C 2N4903 Storage Temperature 2N4901 2N4902 2N4903 3 THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings Thermal Resistance, Junction to Case Junction to Free Air Thermal Resistance Value 2 47.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(BR) Ratings Collector-Emitter Breakdown Voltage) Test Condition(s) IC=200 mAdc, IB=0 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 Min -40 -60 -80 20 Typ - Mx - Unit V VCE=-2.0 V, IC=-1.0 A - 80 V hFE DC Current Gain (*) VCE=-2.0 V, IC=-5.0 A 7 - - 0.1 0.1 0.1 -0.1 -2.0 -0.1 -2.0 -0.1 -2.0 -1.0 mA mA ICBO Collector-Base cut-off Current ICEX Collector Cutoff Current VCE=-40 V, IE=0 VCE=-60 V, IE=0 VCE=-80 V, IE=0 VCE=-40 V, VEB=1.5 V VCE=-40 V, VEB=1.5 V, TCASE=150°C VCE=-60 V, VEB=1.5 V VCE=-60 V, VEB=1.5 V, TCASE=150°C VCE=-80 V, VEB=1.5 V VCE=-80 V, VEB=1.5 V, TCASE=150°C VBE=5.0 V, IC=0 VCE=-10 V, IC=-0.5 A f =1MHz IC=-1.0 A, IB=-0.1 A mA 2N4902 - 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 - IEBO Hfe Emitter Cutoff Current Forward Current Transfer Ratio (*) 20 - - V - - -0.4 V VCE(SAT) Collector-Emitter saturation Voltage (*) IC=-5.0 A, IB=-1.0 A - - -1.5 VBE Base-Emitter Voltage (*) IC=-1.0 A, VCE=-2.0 V - - -1.2 V 3 VBE(SAT) fT Is/b Base-Emitter Saturation Voltage (*) Transition Frequency Second Breakdown Collector Current IC=-5.0 A, IB=-1.0 A VCE=-10 V, IC=-1.0 A, f=1.0 kHz t=1 s, VCE=40 V, TCASE=100°C 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 2N4901 2N4902 2N4903 - 1.7 - V 4 - - MHz 1.25 - - A In accordance with JEDEC Registration Data (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector 3