2N5320

厂商：
COMSET
封装：
描述：
2N5320 - SILICON PLANAR EPITAXIAL TRANSISTORS - Comset Semiconductor

数据手册：

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数据手册
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2N5320 数据手册

NPN 2N5320 – 2N5321 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N5320 and 2N5321 are NPN transistors mounted in TO-39 metal case . They are especially intended for high-voltage medium power applications in industrial and commercial equipements. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VCEV VEBO IC IB PD Ratings Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (VBE = 1.5V) Emitter-Base Voltage (IC = 0) Collector Current Base Current @ Tamb = 25° Total Power Dissipation @ Tcase= 25° 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 Value 75 50 100 75 100 75 6 5 2 1 1 Unit V V V V A A Watts 10 -65 to +200 -65 to +200 °C °C TJ TStg Junction Temperature Storage Temperature range THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient Thermal Resistance, Junction to case 2N5320 2N5321 2N5320 2N5321 Value 175 17.5 Unit °C/W °C/W COMSET SEMICONDUCTORS 1/3 NPN 2N5320 – 2N5321 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO IEBO VCEO VCEV VEBO hFE (1) VCE(SAT) (1) VBE (1) fT ton toff Ratings Collector Cutoff Current Emitter Cutoff Current Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage DC Current Gain Collector-Emitter saturation Voltage Base-Emitter Voltage Transition frequency Turn-on Time Turn-off Time Test Condition(s) VCB = 80 V, IE =0 VCB = 60 V, IE =0 VEB = 5 V, IC =0 VEB = 4 V, IC =0 IC = 10 mA, IB =0 IC = 100 µA VBE = 1.5V IE = 100 µA, IC =0 IC = 500 mA VCE = 4 V IC = 1 A VCE = 2 V IC = 500 mA, IB = 50 mA IC = 500 mA, VCE = 4 V IC = 50 mA, VCE = 4 V f = 10 MHz IC = 500 mA, VCC = 30 V IB1 = 50 mA IC = 500 mA, VCC = 30 V IB1 = -IB2 = 50 mA Min Typ Mx Unit 75 50 100 75 6 5 30 40 10 50 0.1 0.5 0.5 5 130 250 0.5 0.8 1.1 1.4 80 800 V V MHz ns ns µA µA V V V 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 - (1) Pulse conditions : tp < 300 µs, δ =1% COMSET SEMICONDUCTORS 2/3 NPN 2N5320 – 2N5321 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min A B D E F G H I L 12.7 5.08 45° typ max 0.49 6.6 8.5 9.4 1.2 0.9 - Pin 1 : Pin 2 : Case : Emitter Base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3

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2N5320

物料型号： - 2N5320和2N5321是NPN晶体管的型号，封装在TO-39金属外壳中。

器件简介： - 这些晶体管特别适用于工业和商业设备的高压中等功率应用。

引脚分配： - Pin 1: Emitter（发射极） - Pin 2: Base（基极） - Case: Collector（集电极）

参数特性： - 绝对最大额定值： - VCEO（集电极-发射极电压）：2N5320为75V，2N5321为50V - VCBO（集电极-基极电压）：2N5320为100V，2N5321为75V - VCEV（集电极-发射极电压，VBE=1.5V）：2N5320为100V，2N5321为75V - VEBO（发射极-基极电压，Ic=0）：2N5320为6V，2N5321为5V - Ic（集电极电流）：2N5320为2A - IB（基极电流）：2N5320为1A - PD（功耗）：2N5320为1W，2N5321为10W - 热特性： - RthJ-a（结到环境的热阻）：2N5320和2N5321为175°C/W - RthJ-c（结到外壳的热阻）：2N5320和2N5321为17.5°C/W

功能详解： - 电气特性（TC=25°C除非另有说明）： - IcBO（集电极截止电流）：2N5320和2N5321在VcB=80V和60V时分别为0.5和5μA - IEBO（发射极截止电流）：2N5320和2N5321在VEB=5V和4V时分别为0.5和0.1μA - VCEO（集电极发射极击穿电压）：2N5320和2N5321分别为75V和50V - hFE（直流电流增益）：2N5320和2N5321在不同条件下分别为100和10 - VCE(sat)（饱和电压）：2N5320和2N5321分别为0.5V和0.8V - VBE（基极-发射极电压）：2N5320和2N5321分别为1.1V和1.4V - fT（转换频率）：2N5320和2N5321分别为50MHz和80MHz - t_on（开通时间）和t_off（关断时间）：2N5320和2N5321均为800ns

应用信息： - 这些晶体管适用于高压中等功率应用，特别是在工业和商业设备中。

封装信息： - 晶体管封装在TO-39金属外壳中，具体尺寸信息在PDF中有详细描述。

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