2N6058

POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 Value 60 80 100 60 80 100 60 80 100 Unit VCBO Collector-Base Voltage IE=0 V VCEO Collector-EmitterVoltage IB=0 V VCEX Collector-EmitterVoltage VBE=-1.5 V V VEBO Emitter-Base Voltage IC=0 5.0 V Page 1 of 5 IC Collector Current ICM Collector Peak Current IB Base Current PT Power Dissipation @ TC < 25° TJ Ts Junction Storage Temperature 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 12 A 20 A 0.2 mA 150 Watts 200 -65 to +200 °C THERMAL CHARACTERISTICS Symbol Ratings 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 Value Unit RthJ-C Thermal Resistance, Junction to Case 1.17 °C/W Page 2 of 5 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit V 2.0 mA 1.0 mA 5 mA 500 µA ICEX Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current VCEO(SUS) Collector-Emitter Sustaining Voltage (*) 2N6050 2N6057 2N6051 VCE= VCEX =80 V, VBE=-1.5 V 2N6058 VCE= VCEX =100 V, 2N6052 VBE=-1.5 V 2N6059 VCE= VCEX =60 V, VBE=-1.5 V 2N6050 TC=150°C 2N6057 VCE= VCEX =80 V, VBE=-1.5 V 2N6051 TC=150°C 2N6058 VCE= VCEX =100 V, 2N6052 VBE=-1.5 V, TC=150°C 2N6059 2N6050 VCE=30 Vdc, IB=0 2N6057 2N6051 VCE=40 Vdc, IB=0 2N6058 2N6052 VCE=50 Vdc, IB=0 2N6059 2N6050 2N6057 VEB=5 V 2N6051 2N6058 2N6052 2N6059 2N6050 60 2N6057 2N6051 IC=0.1 A 80 2N6058 2N6052 100 2N6059 VCE= VCEX =60 V, VBE=-1.5 V Page 3 of 5 IC=6 A, IB=24 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC=12 A, IB=120 mA VBE(SAT) Base-Emitter Saturation Voltage (*) IC=12 A, IB=120 mA VBE(ON) Base-Emitter Voltage (*) IC=6 A, VCE=3 V fT Transition Frequency IC=5 A, VCE=3 V, f=1 MHz VCE=3 V, IC=6.0 A hFE DC Current Gain (*) VCE=3.0 V, IC=12 A 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 - - 2.0 V - - 3.0 - - 4 V - - 2.8 V 4 - - MHz 750 - 18000 - 100 - - ! ! ! For PNP types current and voltage values are negative ! ! ! (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% Page 4 of 5 MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector Page 5 of 5