2N6250

2N6249 – 2N6250 – 2N6251 HIGH VOLTAGE NPN SILICON POWER TRANSISTORS The 2N6249 – 2N6250 – 2N6251 are NPN silicon transistors in Jedec TO-3. They are designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications. • • • • High Voltage Breakdown Rating Low Saturation Voltages Fast Switching Capability High Es/b Energy Handling Capability ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCER VCB VEB Ratings #Collector-Emitter Voltage (1) 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 Value 200 275 350 225 300 375 300 375 450 6.0 15 Unit V #Collector-Emitter Voltage (1) RBE=50Ω V Vdc Vdc Collector-Base Voltage (1) Emitter-Base Voltage Continuous (1) IC Collector Current Peak Continuous (1) Adc 30 10 Adc 20 25 Adc 50 IB Base Current Peak Continuous IE Emitter Current Peak COMSET SEMICONDUCTORS 1/3 2N6249 – 2N6250 – 2N6251 2N6249 2N6250 2N6251 2N6249 @ TC = 100° 2N6250 2N6251 2N6249 Derate above 25° 2N6250 (1) 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 @ TC = 25° 175 Watts 100 1.0 -65 to +200 -65 to +200 W/°C °C °C Pt Total Power Dissipation TJ Tstg Junction Temperature (1) Storage Temperature (1) (1) This data guaranteed in addition to JEDEC registered data. THERMAL CHARACTERISTICS Symbol RthJC TL Ratings Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes : 1/8’’ from Case for 5 Secondes 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 Value 1 275 Unit °C/W °C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) Ratings Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Test Condition(s) IC=200 mAdc, IB=0 Min Typ Mx Unit 2N6249 200 2N6250 275 2N6251 350 2N6249 225 2N6250 300 2N6251 375 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 5.0 5.0 5.0 5.0 10 5.0 10 5.0 10 mAdc mAdc V Vdc VCER(SUS) IC=0.2 Adc, RBE=50Ω VCE=150 Vdc, IB=0 ICEO Collector-Emitter Current VCE=225 Vdc, IB=0 VCE=300 Vdc, IB=0 VCE=225 Vdc, VEB(off)=1.5 Vdc VCE=225 Vdc, VEB(off)=1.5 Vdc, TC = 150°C VCE=300 Vdc, VEB(off)=1.5 Vdc VCE=300 Vdc, VEB(off)=1.5 Vdc, TC = 150°C VCE=375 Vdc, VEB(off)=1.5 Vdc VCE=375 Vdc, VEB(off)=1.5 Vdc, TC = 150°C ICEX Collector Cutoff Current COMSET SEMICONDUCTORS 2/3 2N6249 – 2N6250 – 2N6251 IEBO Emitter Cutoff Current Ssecond Breakdown Collector Current with base forward biased t=1.0S non-repetitive Ssecond Breakdown Energy with base reverse biased t=1.0S nonrepetitive DC Current Gain Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) VBE=6.0 Vdc, IC=0 Is/b VCE=30 Vdc 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 5.8 5.8 5.8 2.5 2.5 2.5 10 8.0 6.0 - - 1.0 50 50 50 1.5 1.5 1.5 2.5 2.5 2.5 mAdc Vdc Es/b IC= 10 A, VBE(off) = 4.0Vdc, L = 50 µH mJ hFE VCE(SAT) VBE(SAT) IC=10 Adc, VCE=3.0 Vdc IC=10 Adc, IB=1 Adc IC=10 Adc, IB=1.25 Adc IC=10 Adc, IB=1.67 Adc IC=10 Adc, IB=1 Adc IC=10 Adc, IB=1.25 Adc IC=10 Adc, IB=1.67 Adc Vdc Vdc (1) Mesured on a curve tracer (60 Hz full-wave rectified sine wave ). Symbol fT tr ts tf Ratings Current Gain – Bandwith Product Test Condition(s) Min Typ Mx Unit 2.5 2N6259 2N6250 2N6251 2.0 3.5 1.0 MHz VCE=10 Vdc, IC=1.0 Adc, ftest = 1.0 Mhz VCC= 200 Vdc, IC= 10 A, Duty Cycle