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BC160

BC160

  • 厂商:

    COMSET

  • 封装:

  • 描述:

    BC160 - GENERAL PURPOSE TRANSISTORS - Comset Semiconductor

  • 数据手册
  • 价格&库存
BC160 数据手册
PNP BC160/10 – BC160/16 PNP BC161/10 – BC161/16 GENERAL PURPOSE TRANSISTORS They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package. They are particulary designed for audio amplifiers and switching applications up to 1A. NPN complements are the BC140 – BC141. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol -VCBO -VCEO -VEBO -I C -I B Ptot TJ TStg Junction Temperature Storage Temperature range Collector-Base Voltage IE = 0 Collector-Emitter Voltage IB = 0 Emitter-Base Voltage IC = 0 Collector Current Base Current Ratings BC160 BC161 BC160 BC161 BC160 BC161 BC160 BC161 BC160 BC161 @ Tcase= < 45° @ Tamb= < 45° Value 40 60 40 60 5 1 0.1 3.7 0.65 175 -55 to +175 Unit V V V A A Watts °C °C THERMAL CHARACTERISTICS Symbol RthJ-c RthJ-amb Ratings Thermal Resistance, Junction-case Thermal Resistance, Junction-ambient Value 35 200 Unit K/ W K/ W COMSET SEMICONDUCTORS 1/3 PNP BC160/10 – BC160/16 PNP BC161/10 – BC161/16 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol -ICES -VCB0 -VCE0 (*) -VEB0 -VCE(SAT) (*) Ratings Collector – Cutoff Current Collector – Base Breakdown Voltage Collector – Emitter Breakdown Voltage Emitter – Base Breakdown Voltage Collector-Emitter saturation Voltage Base-Emitter Voltage Test Condition(s) IE= 0 ;VCES= 40 V IE= 0 ;VCES= 60 V IE= 0 ; V VCES=40 V Tamb = 150°c VCES=60 V Min 40 60 40 60 5 40 63 100 50 - Typ Mx Unit 0.1 0.35 0.6 1 110 80 120 140 100 160 26 20 30 15 100 100 nA µA V V V -IC = 100 µA IE= 0 -IC = 10 mA IB= 0 -IE= 100 µA IC= 0 -IC= 100 mA , -IB= 10 mA -IC= 500 mA , -IB= 50 mA -IC= 1 A, -IB= 100 mA -IC= 1 A , -VCE= 1V -IC= 100 µA , -VCE= 1 V BC160 BC161 BC160 BC161 BC160 BC161 BC160 BC161 BC160 BC161 -VBE (*) Gr 10 Gr 16 Gr 10 Gr 16 Gr 10 Gr 16 hFE (*) DC Current Gain -IC= 100 mA , -VCE= 1 V -IC= 1 A , -VCE= 1 V fT CCBO toff ton Transition Frequency Collector – base Capacitance Turn-off times Turn-on times -IC= 50 mA , -VCE= 10 V IE= 0 ; -VCB= 20V f = 1 MHZ -IC=100 mA -IB1=-IB2=5 mA -IC=100 Ma -IB1=1 mA 1 1.7 250 160 250 30 650 500 V - MHZ pF ns ns (*) Pulsed : pulse duration = 300µs, duty cycle = 1% COMSET SEMICONDUCTORS 2/3 PNP BC160/10 – BC160/16 PNP BC161/10 – BC161/16 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min A B D E F G H I L 12.7 5.08 45° typ max 0.49 6.6 8.5 9.4 1.2 0.9 - Pin 1 : Pin 2 : Case : Emitter Base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3
BC160 价格&库存

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