BCY78

PNP BCY78 – BCY79 SILICON PLANAR EPITAXIAL TRANSISTORS The BCY78 and BCY79 are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are designed for use in audio drive and low-noise input stages. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCES VEBO IC IB PD PD TJ TStg Ratings Collector-Emitter Voltage (IB =0) Collector-Emitter Voltage (VBE =0) Emitter-Base Voltage (IC =0) Collector Current Base Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range @ Tamb = 25° @ Tcase= 45° BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 Value -45 -32 -45 -32 -5 -5 -200 -20 390 1 200 -65 to +150 Unit V V V mA mA mW Watts °C °C THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to mounting base Thermal Resistance, Junction to ambient in free air BCY79 BCY78 BCY79 BCY78 Value 450 150 Unit °C/W °C/W COMSET SEMICONDUCTORS 1/4 PNP BCY78 – BCY79 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol ICES ICES IEBO VCEO VEBO VCE(SAT) Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Test Condition(s) VCB =-35 V, VBE =0V VCB =-25 V, VB =0V VCB =-35 V VBE =0V,Tj =150°C VCB =-25 V VBE =0V,Tj =150°C VBE =-4.0 V, IC =0 Min Typ -0.12 -04 -0.7 -0.85 -0.55 -0.65 -0.68 -0.75 BCY79IX BCY78IX >40 Typ.270 >250 160 60 >250 100 Typ.390 >380 240 60 >350 120 80 >40 >125 30 Typ.200 >180 120 45 >175