BD142

BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO VCEX IC IB PT Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Base Current Power Dissipation Ratings Value 45 50 7 Unit V V V V A A Watts VBE=-1.5 V 50 15 7 @ TC = 25° 117 TJ Junction Temperature -65 to +200 TS Storage Temperature °C COMSET SEMICONDUCTORS 1/3 BD142 THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.5 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit VCEO(BR) Collector-Emitter Breakdown Voltage (*) IC=200 mA, IB=0 45 V VCEX(BR) Collector-Emitter Breakdown Voltage (*) IC=100 mA, VBE=-1.5 V 50 V VCE(SAT) Collector-Emitter Saturation IC=4 A, IB=0.4 A Voltage (*) Collector-Emitter Cutoff Current - - 1.1 V ICEX VCE= 40 V VBE=-1.5 V - - 2 mA IEBO Emitter-Base Cutoff Current VEB=7 V - - 1 mA VBE Base-Emitter Voltage (*) IC=4.0 A, VCE=4.0V - - 1.5 V COMSET SEMICONDUCTORS 2/3 BD142 Symbol Ratings Test Condition(s) Min Typ Mx Unit IS/B Second Breakdown collector current t=1s, VCE=39 V 3 - - A VCE=4.0 V, IC=4.0 A 12.5 - 160 - hFE Static Forward Current Transfer Ratio (*) VCE=4.0 V, IC=0.5 A 20 - - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector COMSET SEMICONDUCTORS 3/3