BD201

NPN BD201 – BD203 PNP BD202 – BD204 SILCON EPITAXIAL-BASE POWER TRANSISTORS The BD201 and BD203 are NPN transistors mounted in Jedec TO-220 plastic package. They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W into 4Ω or 8Ω load. PNP complements are BD202 and BD204 ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICSM IB PD TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Ratings BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 Value 45 60 60 60 5.0 8 12 25 3 60 150 -65 to +200 Unit V V V A A A A Watts °C °C IC Collector Current ICM Collector Current (non-repetitive peak value,tp max.2 ms) Base Current Total Device Dissipation Junction Temperature Storage Temperature range @ TC = 25° THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-mb Ratings Thermal Resistance, Junction to mounting base Thermal Resistance, Junction to ambient in free air BD201 BD203 BD201 BD203 Value 70 2.08 Unit K/W K/W COMSET SEMICONDUCTORS 1/3 NPN BD201 – BD203 PNP BD202 – BD204 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO ICBO IEBO VBE VCEK hFE VCE(SAT) VBE(SAT) Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Emitter Voltage (1) Knee Voltage (1) DC Current Gain (1) Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) Test Condition(s) VCE=30 V, IB=0V VCB=40 V, IE=0V, Tj=150°C VBE=5.0 V, IC=0 IC=3 A, VCE=2.0 V IC=3 A, IB= value for which IC=3.3 A at VCE=2.0 V IC=3 A, VCE=2.0 V IC=2 A, VCE=20 V IC=3 A, IB=0.3 A IC=6 A, IB=0.6 A IC=6 A, IB=0.6 A Min Typ Mx Unit BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 30 30 1 0.2 1 0.5 1.5 1 1.5 2 V mA mA mA V V - Symbol fhfe fT Is/b hFE1/hFE2 ton Toff Ratings Cut-off frequency Transition frequency Test Condition(s) IC=0.3 A, VCE=3.0 V IC=0.3 A, VCE=3.0 V f= 1MHz Min Typ Mx Unit BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 BD201 BD203 25 7 1.5 2.5 1 µs 4 KHz MHz A - Forward bias second VCE=40 V,tp= 0.1 s Tamb= 25 °C breakdown collector current DC current gain ration of IC=1 A, VCE=2.0 V matched complementary pairs Turn-on time Turn-off time ICon=2 A IBon = -IBoff =0.2 A (1) Pulse conditions : tp < 300 µs, δ =2% COMSET SEMICONDUCTORS 3/3 NPN BD201 – BD203 PNP BD202 – BD204 MECHANICAL DATA CASE TO-220 DIMENSIONS mm A B C D E F G H L M N P R S T U Pin 1 : Pin 2 : Pin 3 : 9,86 15,73 13,37 6,67 4,44 4,21 2,99 17,21 1,29 3,6 1,36 0,46 2,1 5 2,52 0,79 inches 0,39 0,62 0,52 0,26 0,17 0,16 0,11 0,68 0,05 0,14 0,05 0,02 0,08 0,19 0,098 0,03 base Collector emitter Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3