SEMICONDUCTORS
BD643/645/647/649/651
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651
Value
60 80 100 120 140 45 60 80 100 120 5
Unit
VCBO
Collector-Base Voltage
V
VCEO
Collector-Emitter Voltage
V
VEBO
Emitter-Base Voltage
V
IC
Collector Current
8
A
ICM
Collector Peak Current
12
A
Page 1 of 5
SEMICONDUCTORS
BD643/645/647/649/651
Symbol Ratings
BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651
Value
Unit
IB
Base Current
150
mA
PT
Power Dissipation
@ Tmb < 25°
62.5
Watts
TJ
Junction Temperature
150 °C -65 to +150
Ts
Storage Temperature range
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS Symbol
RthJ-MB
Ratings
From junction to mounting base BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651
Value
2
Unit
K/W
RthJ-A
From junction to ambient in free air
70
K/W
Page 2 of 5
SEMICONDUCTORS
BD643/645/647/649/651
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651
Min Typ Mx Unit
IE=0,VCB =VCEOMAX
-
-
0.1
mA
ICBO
Collector Cutoff Current
IE=0,VCB =1/2 VCBOMAX, TJ=150°C
-
-
1
mA
ICEO
Collector Cutoff Current
IE=0, VCE =1/2 VCEOMAX
-
-
0.2
mA
IEBO
Emitter Cutoff Current
VEB=5 V, IC=0
-
-
5.0
mA
IC=4 A, IB=16 mA
VCE(SAT)
Collector-Emitter saturation Voltage (*)
IC=3 A, IB=12 mA
IC=5 A, IB=50 mA
-
-
2 2 2 2 2 2.5 2.5 2.5 2.5 2.5
V
VBE(SAT)
Base-Emitter Saturation Voltage (*)
IC=12 A, IB=50 mA
-
-
3
V
Page 3 of 5
SEMICONDUCTORS
BD643/645/647/649/651
Symbol Ratings
BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 750 750 10 10 10 10 10
Value
2.5 2.5 2.5 2.5 2.5 -
Unit
IC=4 A, VCE=3 V
VBE
Base-Emitter Voltage (*)
V
IC=3 A, VCE=3 V
VCE=3.0 V, IC=0.5 A
1900
VCE=3.0 V, IC=4 A
hFE
DC Current Gain (*)
VCE=3.0 V, IC=3 A
-
-
VCE=3.0 V, IC=8 A
1800
VCE=3.0 V, IC=4 A, f=1MHz
hfe
Small Signal Current Gain
VCE=3.0 V, IC=3 A, f=1MHz
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
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SEMICONDUCTORS
BD643/645/647/649/651
MECHANICAL DATA CASE TO-220
DIMENSIONS
mm A B C D E F G H L M N P R S T U Pin 1 : Pin 2 : Pin 3 : 9,86 15,73 13,37 6,67 4,44 4,21 2,99 17,21 1,29 3,6 1,36 0,46 2,1 5 2,51 0,79 inches 0,39 0,62 0,52 0,26 0,17 0,16 0,11 0,68 0,05 0,14 0,05 0,02 0,08 0,19 0,098 0,03 Anode 1 Anode 2 Gate
Page 5 of 5