SEMICONDUCTORS
BD644/646/648/650/652
SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652
Value
45 60 80 100 120 45 60 80 100 120 5
Unit
-VCBO
Collector-Base Voltage
V
-VCEO
Collector-Emitter Voltage
V
-VEBO
Emitter-Base Voltage
V
-I C
Collector Current
8
A
-ICM
Collector Peak Current
12
A
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SEMICONDUCTORS
BD644/646/648/650/652
Symbol Ratings
BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652
Value
Unit
-I B
Base Current
150
mA
PT
Power Dissipation
@ Tmb < 25°
62.5
Watts
TJ
Junction Temperature
150 °C -65 to +150
Ts
Storage Temperature range
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS Symbol
RthJ-MB
Ratings
From junction to mounting base BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652
Value
2
Unit
K/W
RthJ-A
From junction to ambient in free air
70
K/W
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SEMICONDUCTORS
BD644/646/648/650/652
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652
Min Typ Mx Unit
-IE=0,-VCB =-VCEOMAX
-
-
0.1
mA
-ICBO
Collector Cutoff Current
-IE=0,-VCB =1/2 -VCBOMAX, TJ=150°C
-
-
1
mA
-ICEO
Collector Cutoff Current
-IE=0, -VCE =1/2 -VCEOMAX
-
-
0.2
mA
-IEBO
Emitter Cutoff Current
-VEB=5 V, -IC=0
-
-
5.0
mA
-IC=4 A, -IB=16 mA
-VCE(SAT)
Collector-Emitter saturation Voltage (*)
-IC=3 A, -IB=12 mA
-IC=5 A, -IB=50 mA
-
-
2 2 2 2 2 2.5 2.5 2.5 2.5 2.5
V
-VBE(SAT)
Base-Emitter Saturation Voltage (*)
-IC=12 A, -IB=50 mA
-
-
3
V
Page 3 of 5
SEMICONDUCTORS
BD644/646/648/650/652
Symbol Ratings
BD644 BD646 -IC=4 A, -VCE=3 V BD648 BD650 BD652 BD644 BD646 -IC=3 A, -VCE=3 V BD648 BD650 BD652 BD644 BD646 -VCE=3.0 V, -IC=0.5 A BD648 BD650 BD652 BD644 BD646 -VCE=3.0 V, -IC=4 A BD648 BD650 BD652 BD644 BD646 -VCE=3.0 V, -IC=3 A BD648 BD650 BD652 BD644 BD646 -VCE=3.0 V, -IC=8 A BD648 BD650 BD652 BD644 BD646 -VCE=3.0 V, -IC=4 A, f=1MHz BD648 BD650 BD652 BD644 BD646 -VCE=3.0 V, -IC=3 A, f=1MHz BD648 BD650 BD652
-IC=3 A, -IBon= IBoff=12 mA
Value
750 750 10 10 10 10 10 -
Unit
2.5 2.5 2.5 2.5 2.5 -
-VBE
Base-Emitter Voltage (*)
-
V
2700
hFE
DC Current Gain (*)
-
-
200
hfe
Small Signal Current Gain
ton toff
turn-on time turn-off time
All types
1 5
µs µs
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
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SEMICONDUCTORS
BD644/646/648/650/652
MECHANICAL DATA CASE TO-220
DIMENSIONS
mm A B C D E F G H L M N P R S T U Pin 1 : Pin 2 : Pin 3 : 9,86 15,73 13,37 6,67 4,44 4,21 2,99 17,21 1,29 3,6 1,36 0,46 2,1 5 2,51 0,79 inches 0,39 0,62 0,52 0,26 0,17 0,16 0,11 0,68 0,05 0,14 0,05 0,02 0,08 0,19 0,098 0,03 Anode 1 Anode 2 Gate
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