BD648

SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value 45 60 80 100 120 45 60 80 100 120 5 Unit -VCBO Collector-Base Voltage V -VCEO Collector-Emitter Voltage V -VEBO Emitter-Base Voltage V -I C Collector Current 8 A -ICM Collector Peak Current 12 A Page 1 of 5 SEMICONDUCTORS BD644/646/648/650/652 Symbol Ratings BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value Unit -I B Base Current 150 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol RthJ-MB Ratings From junction to mounting base BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value 2 Unit K/W RthJ-A From junction to ambient in free air 70 K/W Page 2 of 5 SEMICONDUCTORS BD644/646/648/650/652 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Min Typ Mx Unit -IE=0,-VCB =-VCEOMAX - - 0.1 mA -ICBO Collector Cutoff Current -IE=0,-VCB =1/2 -VCBOMAX, TJ=150°C - - 1 mA -ICEO Collector Cutoff Current -IE=0, -VCE =1/2 -VCEOMAX - - 0.2 mA -IEBO Emitter Cutoff Current -VEB=5 V, -IC=0 - - 5.0 mA -IC=4 A, -IB=16 mA -VCE(SAT) Collector-Emitter saturation Voltage (*) -IC=3 A, -IB=12 mA -IC=5 A, -IB=50 mA - - 2 2 2 2 2 2.5 2.5 2.5 2.5 2.5 V -VBE(SAT) Base-Emitter Saturation Voltage (*) -IC=12 A, -IB=50 mA - - 3 V Page 3 of 5 SEMICONDUCTORS BD644/646/648/650/652 Symbol Ratings BD644 BD646 -IC=4 A, -VCE=3 V BD648 BD650 BD652 BD644 BD646 -IC=3 A, -VCE=3 V BD648 BD650 BD652 BD644 BD646 -VCE=3.0 V, -IC=0.5 A BD648 BD650 BD652 BD644 BD646 -VCE=3.0 V, -IC=4 A BD648 BD650 BD652 BD644 BD646 -VCE=3.0 V, -IC=3 A BD648 BD650 BD652 BD644 BD646 -VCE=3.0 V, -IC=8 A BD648 BD650 BD652 BD644 BD646 -VCE=3.0 V, -IC=4 A, f=1MHz BD648 BD650 BD652 BD644 BD646 -VCE=3.0 V, -IC=3 A, f=1MHz BD648 BD650 BD652 -IC=3 A, -IBon= IBoff=12 mA Value 750 750 10 10 10 10 10 - Unit 2.5 2.5 2.5 2.5 2.5 - -VBE Base-Emitter Voltage (*) - V 2700 hFE DC Current Gain (*) - - 200 hfe Small Signal Current Gain ton toff turn-on time turn-off time All types 1 5 µs µs (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% Page 4 of 5 SEMICONDUCTORS BD644/646/648/650/652 MECHANICAL DATA CASE TO-220 DIMENSIONS mm A B C D E F G H L M N P R S T U Pin 1 : Pin 2 : Pin 3 : 9,86 15,73 13,37 6,67 4,44 4,21 2,99 17,21 1,29 3,6 1,36 0,46 2,1 5 2,51 0,79 inches 0,39 0,62 0,52 0,26 0,17 0,16 0,11 0,68 0,05 0,14 0,05 0,02 0,08 0,19 0,098 0,03 Anode 1 Anode 2 Gate Page 5 of 5