BD649

SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value 60 80 100 120 140 45 60 80 100 120 5 Unit VCBO Collector-Base Voltage V VCEO Collector-Emitter Voltage V VEBO Emitter-Base Voltage V IC Collector Current 8 A ICM Collector Peak Current 12 A Page 1 of 5 SEMICONDUCTORS BD643/645/647/649/651 Symbol Ratings BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value Unit IB Base Current 150 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol RthJ-MB Ratings From junction to mounting base BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value 2 Unit K/W RthJ-A From junction to ambient in free air 70 K/W Page 2 of 5 SEMICONDUCTORS BD643/645/647/649/651 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Min Typ Mx Unit IE=0,VCB =VCEOMAX - - 0.1 mA ICBO Collector Cutoff Current IE=0,VCB =1/2 VCBOMAX, TJ=150°C - - 1 mA ICEO Collector Cutoff Current IE=0, VCE =1/2 VCEOMAX - - 0.2 mA IEBO Emitter Cutoff Current VEB=5 V, IC=0 - - 5.0 mA IC=4 A, IB=16 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC=3 A, IB=12 mA IC=5 A, IB=50 mA - - 2 2 2 2 2 2.5 2.5 2.5 2.5 2.5 V VBE(SAT) Base-Emitter Saturation Voltage (*) IC=12 A, IB=50 mA - - 3 V Page 3 of 5 SEMICONDUCTORS BD643/645/647/649/651 Symbol Ratings BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 750 750 10 10 10 10 10 Value 2.5 2.5 2.5 2.5 2.5 - Unit IC=4 A, VCE=3 V VBE Base-Emitter Voltage (*) V IC=3 A, VCE=3 V VCE=3.0 V, IC=0.5 A 1900 VCE=3.0 V, IC=4 A hFE DC Current Gain (*) VCE=3.0 V, IC=3 A - - VCE=3.0 V, IC=8 A 1800 VCE=3.0 V, IC=4 A, f=1MHz hfe Small Signal Current Gain VCE=3.0 V, IC=3 A, f=1MHz - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% Page 4 of 5 SEMICONDUCTORS BD643/645/647/649/651 MECHANICAL DATA CASE TO-220 DIMENSIONS mm A B C D E F G H L M N P R S T U Pin 1 : Pin 2 : Pin 3 : 9,86 15,73 13,37 6,67 4,44 4,21 2,99 17,21 1,29 3,6 1,36 0,46 2,1 5 2,51 0,79 inches 0,39 0,62 0,52 0,26 0,17 0,16 0,11 0,68 0,05 0,14 0,05 0,02 0,08 0,19 0,098 0,03 Anode 1 Anode 2 Gate Page 5 of 5